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博碩士論文 etd-0131113-161115 詳細資訊
Title page for etd-0131113-161115
論文名稱
Title
利用超臨界二氧化碳於矽基太陽能電池表面鈍化之應用
Surface Passivation of Bulk Silicon Solar Cells by Super Critical CO2 Treatments
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
49
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2013-01-28
繳交日期
Date of Submission
2013-01-31
關鍵字
Keywords
矽基太陽能電池、超臨界二氧化碳、金氧半電容、鈍化、二氧化矽
passivation, bulk silicon solar cell, supercritical CO2, MOS capacitor, silicon dioxide
統計
Statistics
本論文已被瀏覽 5689 次,被下載 2609
The thesis/dissertation has been browsed 5689 times, has been downloaded 2609 times.
中文摘要
本論文將討論以超臨界二氧化碳流體挾帶雙氧水直接成長二氧化矽薄膜或對濺鍍成長之二氧化矽薄膜進行改質,並將此技術應用於矽基太陽能電池元件表面之鈍化處理。傳統矽基太陽能電池元件表面之鈍化層厚度可達100 nm,因此製作歐姆電極的溫度高達850℃;如果鈍化層厚度可厚度控制在10 nm以下,電極的退火溫度可大幅降低,可有效降低生產成本。在本論文中,我們將探討二氧化矽薄膜在不同濺鍍厚度與超臨界二氧化碳流體製程條件下電性的改變,包含電容-電壓 (C-V)和電流-電壓 (I-V)特性,同時應用於單晶矽太陽能電池元件製程。
本實驗所做之太陽能電池元件,未有表面鈍化處理時,於AM1.5 (1000W/m2)照光下得到的功率轉換效率僅為7.08 %,其短路電流密度、開路電壓與填充因子分別為36.43 mA/cm2、0.501 V、0.35;而當有表面鈍化處理,其濺鍍之二氧化矽薄膜厚度為10 nm、超臨界處理時間為2hr且燒結溫度為300℃時,在AM1.5照光下得到的功率轉換效率為11.58%,其短路電流密度、開路電壓與填充因子分別為40.36 mA/cm2、0.558 V、0.46,元件效率可大幅提升。
Abstract
In this thesis, surfaces of bulk Si solar cells were passivated by direct growth of SiO2 thin films using supercritical CO2 (SCCO2) treatments with H2O2 and by SCCO2 treatments to sputtered SiO2 thin films. The passivation layer of a conventional Si solar cell can be as thick as 100 nm, so the sintering temperature as high as 850℃ is used to form a good ohmic contact to the cell surface. If the passivation layer thickness is under 10 nm, the sintering temperature and cost can be decreased significantly. The electrical properties including I-V and C-V of the SiO2 films prepared at different thickness of sputtered SiO2 and SCCO2 treatments were discussed. In addition, these techniques were employed in processes of bulk single crystal silicon solar cells.
If no passivation layer was used, the conversion efficiency of a bulk single-crystal silicon solar cell is 7.08% under AM1.5 (1000W/m2) radiation. The measured short-circuit current density, open-circuit voltage, fill factor are 36.43 mA/cm2、0.501 V and 0.35, respectively. But when SCCO2 treatments were used after sputtering, for passivating sputtered SiO2 thin films the conversion efficiency of the silicon solar cells increased to 11.58% under AM1.5 radiation at a sintering temperature of 300℃. The measured short-circuit current density, open-circuit voltage, fill factor are 40.36 mA/cm2、0.558 V and 0.46, respectively. The conversion efficiency was increased drastically with the proposed techniques.
目次 Table of Contents
第一章 導論 1
1-1 簡介 1
1-2 太陽能電池原理 1
1-3 太陽能電池之電性參數 2
1-3-1 短路電流 (Short Circuit Current, Isc) 3
1-3-2 開路電壓 (Open Circuit Voltage, Voc)4
1-3-3 填充因子 (Fill Factor, FF) 4
1-3-4 轉換效率 (Conversion Efficiency, η) 4
1-4 影響效率之關鍵 4
1-5 超臨界流體技術原理與應用 5
1-6 研究動機 8
第二章 製程材料與儀器介紹 10
2-1 二氧化矽 (SiO2) 10
2-2 射頻磁式濺鍍系統 10
2-3 熱蒸鍍系統 (Thermal Evaporator) 12
2-4 超臨界流體系統 13
2-5 快速熱退火系統 (Rapid Thermal Annealing, RTA) 13
2-6 量測儀器介紹 14
2-6-1 薄膜特性分析儀 (N & K Analyzer) 14
2-6-2 表面輪廓儀 (Surface Profiler) 14
2-6-3 半導體參數分析儀 (Semiconductor Parameter Analyzer) 15
2-6-4 太陽光譜模擬器 (Solar Simulator) 15
2-6-5 穿透式電子顯微鏡 (Transmission Electron Microscope) 16
第三章 實驗步驟 17
3-1 材料的成長條件 17
3-1-1 二氧化矽薄膜成長條件 17
3-1-2 金屬鋁薄膜成長條件 17
3-2 元件製作流程 17
3-2-1 Metal-Insulation-Semiconductor (MIS)結構製作流程 17
3-2-2 太陽能電池結構製作流程 20
第四章 結果與討論 23
4-1 超臨界成長二氧化矽薄膜分析 23
4-1-1 二氧化矽材料分析 23
4-1-2 TEM量測結果 25
4-1-3 太陽能電池量測結果 27
4-2 濺鍍之二氧化矽薄膜經超臨界處理分析 28
4-2-1 二氧化矽材料分析 29
4-2-2 太陽能電池量測結果 32
第五章 結論 36
參考文獻 37

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