本論文主要以分子束蒸鍍系統成長CuInSe2 雙層膜以製作薄膜太
陽能電池。其他搭配材料包括鈉玻璃基板、硫化鎘緩衝層、氧化鋅透
光層，以及金屬鉬背部電極和鋁正面電極。製程條件方面，除了硫化
鎘於大氣環境下使用化學方法成長外，其餘皆於真空環境中採取物理
氣相沉積法成長。本實驗室已成功研製出以CdS/CuInSe2 為主之薄膜
太陽電池，並由電流-電壓特性得知其填充因子為39.76%、開路電壓
為0.26V、短路電流為2.104mA。此元件特性仍需藉由各層材料性質
之改善來提升，尤其是氧化鋅透光層本身電阻過高，且與鋁金屬電極
之界面接觸不佳的問題均有待改善。另外，P-N 接面理想係數為
1.9161，表示電流傳導機制主要以複合電流為主，因此CuInSe2/CdS
界面特性必得再進行研究改良。

We use molecular beam deposition (MBD) system to grows bi-layers
CuInSe2-based thin film solar cell, soda-lime glass as our substrate,
cadmium sulfide(CdS) as our buffer layer, zinc oxide(ZnO) as window
layer, Mo as back contact metal and using Al as front contact metal. In
our device fabrication process, we primary use physical vapor
deposition(PVD) to grows thin film in vacuum condition expect
Cadmium sulfide.
We already fabricate the CdS/CuInSe2-based thin film solar cell
successful. Using current-voltage measurement to get fill factor(F.F.) is
39.76%, open circuit voltage(Voc) is 0.26V and short circuit current(Isc) is
2.104mA in our device. It’s so essential to improve every layers
properties in order to get higher quantum efficiencies. Especially,
resistivity of the zinc oxide window layer is too high and the interface
properties between Al and ZnO is not so good. The junction perfection
factor is 1.9161, recombination current is the dominate current. So,
research and further improve interface characterization between
CuInSe2/CdS is necessary.

第一章簡介......................................................................................1
1.1 前言........................................................................................1
1.2 CuInSe2 薄膜太陽能電池之研究發展現況與歷史背景...........2
1.3 元件設計分析與探討
1.3.1 元件結構設計及安排................................................3
1.3.2 各層薄膜之需求與功能要求.....................................3
1.4 研究目標...............................................................................8
第二章實驗成長方法與分析儀器....................................................9
2.1 元件製造流程與步驟.......................................................9
2.2 薄膜成長儀器................................................................13
2.2.1 磁控濺鍍系統..........................................................13
2.2.2 分子束蒸鍍系統......................................................13
2.2.3 密閉式化學水域沉積法...........................................14
2.3 薄膜特性分析方法及儀器...................................................14
2.3.1 X-ray 繞射儀.............................................................14
2.3.2 電子微探針分析儀(EPMA) .......................................15
2.3.3 掃描式電子顯微鏡(SEM) ..........................................15
2.3.4 á-step 量測................................................................15
2.3.5 四點探針(Four-point probe) .......................................15
2.3.6 熱探針量測(Hot probe)..............................................16
2.3.7 吸收光譜儀(UV/NIR/VIS).........................................16
2.3.8 霍爾量測儀(Hall-measurement) .................................16
2.3.9 電流-電壓特性量測(I-V) ...........................................16
2.3.10 電容-電壓特性量測(C-V).........................................17
第三章結果與討論.........................................................................18
3.1 材料部分：各層薄膜材料成長與分析................................18
3.1.1 Mo 薄膜之鍍製..........................................................18
3.1.2 CuInSe2 薄膜之鍍製................................................... 21
3.1.3 CdS 薄膜之鍍製.........................................................23
3.1.4 ZnSe 薄膜以及Te 加入之鍍製...................................23
3.1.5 ZnO:Al 薄膜成長探討................................................24
3.1.6 Al 薄膜之鍍製............................................................25
3.2 元件部分：元件特性測試與分析比較................................26
3.2.1 元件特性之基本參數介紹.........................................26
3.2.2 元件製程參數及比較................................................26
3.2.3 電流-電壓特性曲線量測...........................................27
第四章結論....................................................................................29
第五章參考文獻............................................................................ 31

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