本研究的目的是利用磁式濺鍍機，於室溫，在矽基板和玻璃基板上成長矽與氮化矽薄膜。並探討此它們在不同製程條件下，特性的改變情形。
氮化矽薄膜的電性方面，我們將探討其在不同的製程條件下(包含濺鍍功率、氮氣與氫氣的比例)，電壓-電流(I-V)和電壓-電容(C-V)特性。我們所成長出來的氮化矽薄膜於MIS的結構下，最佳小的漏電流在電場1 MV/cm的情況下2×10 A/cm ，其磁滯電壓約2V左右。
氮化矽薄膜的表面粗糙度也在1nm以下。另外，我們也將利用氧化銦錫(Indium tin oxide-ITO)當作電極，製作以氮化矽薄膜為介電層的電容器。
矽薄膜方面，利用磁式濺鍍機成長出來的矽薄膜為非結晶相的。我們將量測矽薄膜的光導電特性變化，以了解矽薄膜的特性變化。

Silicon and silicon nitride thin films were growth on Si and glass substrates at room temperature by ratio-frequency (r-f) magnetron sputtering.
The electrical characteristics of the silicon nitride films were characterized using I-V and C-V measurement under different growth condition, including r-f power, nitrogen partial pressure, and hydrogen partial pressure. Minimum current leakages for MIS structure as low as 2×10 A/cm were obtained at 1 MV/cm electrical field with hysteresis voltage about 2V. The root-mean square surface roughness of the silicon nitride film is less then 1nm. In addition, silicon nitride capacitors with indium-tin-oxide as electrodes were fabricated.
Silicon thin films prepared by R.F. magnetron sputtering at room temperature are amorphous. The measurements on the variation of the photo-conductivity were used to characterize the characteristics of the Si film.

目錄
第一章 導論 1
第二章 實驗原理與儀器介紹 4
2-1金屬-絕緣層-半導體結構特性介紹 4
2-1-1堆疊式的結構 4
2-1-2 MIS結構電荷及缺陷類型 5
2-1-3高頻電容-電壓特性 6
2-2 光導電性(photoconductivity) 8
2-3所用到之材料 9
2-3-1基板 9
2-3-2 濺鍍鈀材 10
2-3-3 熱蒸鍍鈀材 10
2-4磁式濺鍍機系統 10
2-5熱蒸鍍系統 12
2-6量測系統 12
2-6-1 橢圓偏光儀( Ellipsometer ) 12
2-6-2原子力顯微鏡(Atomic Force Microscope) 13
2-6-3電性量測系統 14
2-7 元件製作 14
2-7-1 MIS結構製作流程 14
2-7-2 MSM結構製作 19
第三章 結果與討論 23
3-1 氮化矽薄膜 23
3-1-1 功率 23
3-1-1.1 沉積速率與折射率 23
3-1-1.2 表面粗糙度(Roughness) 24
3-1-1.3 討論 26
3-1-2 氬氣-氮氣比例 26
3-1-2.1 沉積速率與折射率 26
3-1-2.2 表面粗糙度 27
3-1-2.3 漏電流密度(leakage current density) 30
3-1-2.4 電容特性(Capacitance) 31
3-1-2.5 討論 33
3-1-2.5a 絕緣層厚度的影響 33
3-1-2.5b 基板表面影響 34
3-1-3 氫氣鈍化(Hydrogen passivation) 39
3-1-3.1 沉積速率與折射率 39
3-1-3.2 表面粗糙度 40
3-1-3.4 漏電流密度 42
3-1-3.4 電容特性 43
3-1-3.5 討論 44
3-1-4 玻璃-ITO-氮化矽-鋁 45
3-2 非晶矽薄膜 47
3-2-1 沉積速率 47
3-2-2折射率 48
3-2-3吸收係數(absorption coefficient) 48
3-2-4 光導電性 49
3-2-5 討論 50
第四章 結論 52
4-1氮化矽 52
4-2 非晶矽 53
參考文獻 54

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