本篇研究回顧大氣電漿技術之相關文獻，瞭解目前大氣電漿所達之技術層面。同時對市面上三類大氣電漿設備餘暉放電電漿、介電質放電電漿以及火焰電漿進行應用性之實驗評估，結果顯示介電質放電電漿設備最適合處理高分子聚合物。本論文並以此類大氣電漿設備進行PMMA、PDMS及PC等塑膠基材表面改質研究，並以多項表面檢測技術分析經大氣電漿改質後之高分子材料表面性質。
以表面潤濕儀量測電漿處理後之高分子材料表面皆呈現明顯親水現象。傅氏紅外線光譜分析經電漿處理後之PDMS表面，其表面確實於1040 cm-1之波數位置產生-C-O-H親水官能基。以X光光電子能譜儀檢測經電漿處理後之表面元素組成，結果顯示PDMS表面氧/碳原子比值增加至未處理的3.5倍。以及利用掃瞄式電子顯微鏡（SEM）與原子力顯微鏡（AFM）觀察樣本表面形貌，觀察結果發現經電漿處理後樣本之表面粗糙度僅呈現數奈米之變化。研究中發展電漿接合高分子基材之技術，該接合技術可在低溫下進行接合，因此不致於接合過程中發生熱變形，且其接合程序可於6分鐘內完成。接合強度之拉伸試驗結果顯示，電漿無膠接合PMMA基板之強度為熱壓接合之7.7倍，若以酒精輔助電漿接合，則其強度可高達3.81 MPa以上，為目前文獻報導最高者，該技術並可成功接合PMMA/PC兩種不同之材料。
最後則以三種微流體晶片之實施例，驗證大氣電漿接合技術於微流體生醫晶片製程應用，研究設計兩組具有三層基板結構之微流體迴旋式混合器及一組毛細管電泳晶片進行測試。實驗結果顯示，該迴旋式混合器於低雷諾數之操作條件下（Re = 4），便可達90%之混合效率。毛細管電泳晶片之測試顯示，電漿接合之十字形電泳晶片可穩定將染劑注射與分離達30分鐘以上，且可成功分離100 bp至3000 bp 之DNA標準樣本。本研究所發展之大氣電漿接合技術不僅可應用於生醫晶片之製程，且其接合效率高、接合品質好，為一具有高商業潛力之技術。

This paper presents new bonding and surface modification methods for plastic substrates utilizing atmospheric pressure plasma (AP plasma) treatment. Three kinds of AP plasma equipments including after-glow discharge, dielectric barrier discharge and flame type are tested and evaluated for their feasibility of microfluidic device fabrication. The experimental results show that the DBD plasma equipment is the most suitable one for microfluidic applications due to its low temperature and high treating level. Three kinds of polymenr including PMMA, PC and PDMS are used as the sample substrates for evaluating the performance of AP plasma in this study. Experimental results show that the polymer surface turns into hydrophilic after AP plasma treatment. Fourier Transform Infrared Spectroscopy (FTIR) inspection indicates that a new peak corresponding to -C-OH functional group is generated at the wavenumber of 1040 cm-1 after AP plasma treatment. X-ray photoelectron spectrum investigation also shows that the O/C (atom ratio) is 3.5-fold incensement in compare with the bare sample. SEM and AFM observations are utilized to evaluate the surface morphology change after plasma treatment. The measured surface roughness is at the level of several nanometers which is acceptable for most microfluidic applications. We develop two simple and high strength bonding methods for sealing microfluidic deivices in this study. The bonding process can be achieved in 6 minutes and bonding strength of 1.69 MPa and 3.81 MPa can be obtained using direct plasma bonding and ethyl alcohol assisted bonding, respectively. The bonding strength obtained using ethyl alcohol assisted bonding technique reported in this study is the highest one that ever been reported.
The feasibility of AP plasma treatment for sealing microfluidic chips are confirmed by three examples including two novel passive microfluidic mixers and one cross-type micro CE chip. Experimental result shows that the mixing performance of the micromixer can reach up to 90% at an operation condition of a low Reynolds number of 4. In addition, micro CE chip sealed with the proposed method can successfully inject and separate dye sample with a long-term stability upto 30 minutes. Separation of 100 bp standard DNA sample of 100 bp to 3000 is also successfully demonstrated with high separation efficiency. It is the author’s firm believes that the proposed bonding method will give substaintial impact on the fabrication of microfluidic device in the future.

謝誌......................................................I
中文摘要.................................................II
英文摘要.................................................IV
目錄.....................................................VI
表目錄.................................................XI
圖目錄..................................................XII

第一章 緒論...............................................1
1.1 前言...............................................1
1.2 電漿簡介...........................................2
1.3 大氣電漿之生成.....................................6
1.4 大氣電漿與傳統電漿.................................9
1.5 研究動機與目的....................................10
1.6 研究方法..........................................12

第二章 文獻回顧..........................................14
2.1 大氣電漿之基本特性...................................14
2.2 三類大氣電漿種類.....................................18
2.2.1 餘暉放電（After Glow）.............................19
2.2.2 介電質放電（Dielectric Barrier Discharge, DBD）.............21
2.2.3 火焰電漿（Flame）..................................22
2.3 大氣電漿之應用回顧...................................22
2.3.1 沈積...............................................22
2.3.2 蝕刻...............................................26
2.3.3 表面改質...........................................27
2.3.4 表面清潔...........................................31
2.3.5 無電鍍.............................................32
2.4 電漿接合技術.........................................33

第三章 三類大氣電漿之應用與評估..........................35
3.1三類大氣電漿於塑膠基材接合及於表面形貌影響之評估實驗..35
3.1.1 餘暉放電電漿.......................................35
3.1.1.1 餘暉放電塑膠基材接合實驗.........................37
3.1.1.2 餘暉放電處理前後於塑膠晶片表面形貌之影響.........40
3.1.2 介電質放電.........................................43
3.1.2.1 介電質放電塑膠基材接合實驗.......................43
3.1.2.2 介電質放電處理前後於塑膠晶片表面形貌之影響.......45
3.1.3 火焰電漿...........................................47
3.1.3.1 火焰電漿塑膠基材接合實驗.........................47
3.1.3.2 火焰電漿處理前後於塑膠晶片表面形貌之影響.........48
3.2 紡織產業之纖維布料表面處理應用評估實驗...............50
3.2.1 紡織纖維布料表面處理...............................50
3.2.2 水滴擴散實驗.......................................52
3.2.3 撥水劑披覆接枝實驗.................................56
3.2.4 電子掃瞄顯微鏡觀測PET聚酯纖維......................58
3.2.5 大氣電漿應用於PET聚酯纖維表面處理之結果............60
3.3 半導體產業之ITO玻璃清潔及光阻去除效率應用評估實驗....61
3.3.1 ITO玻璃表面清潔....................................61
3.3.2 AZ4620光阻去除.................................... 62
3.4 應用評估實驗之結果...................................65

第四章 塑膠基材表面改質之表面分析與探討..................67
4.1 大氣電漿表面改質原理.................................67
4.2 大氣電漿表面改質分析之設備系統架設...................69
4.2.1 大氣電漿設備及實驗參數設計.........................69
4.2.2表面潤濕性儀器之建構與測試......................... 70
4.3 大氣電漿表面改質之表面分析實驗.......................73
4.3.1 表面潤濕性及表面能之量測...........................73
4.3.2 傅氏紅外線光譜儀量測...............................79
4.3.3 X光光電子光譜儀量測................................82
4.3.4 表面粗糙度量測.....................................86
4.4 大氣電漿接合技術.....................................88
4.4.1 直接接合...........................................88
4.4.2 添加酒精輔助接合...................................90

第五章 微流體微型混合器及CE電泳晶片之應用................98
5.1 自旋式微流體微型混合器晶片..........................101
5.1.1 自旋式微行混合器設計原理..........................101
5.1.2 晶片製作與材料....................................103
5.1.3 自旋微型混合器晶片之實驗系統架設..................107
5.1.4 自旋微型混合器之實驗結果與討論....................108
5.2 非平衡式微流體混合器晶片製作之應用..................112
5.2.1 晶片設計、原理與製作..............................112
5.2.2 非平衡式微流體晶片之實驗結果與討論................113
5.3 CE毛細管電泳十字型晶片之應用........................115
5.3.1 毛細管電泳晶片....................................115
5.3.2 電漿輔助接合應用於十字形晶片之電泳實驗............116

第六章 結論與未來展望..................................121
6.1 結論................................................121
6.2 未來展望............................................123
參考文獻................................................125

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