本實驗先嘗試利用不同方式製作ZnS薄膜後再摻入O形成ZnS1-xOx(簡稱Zn(S,O))薄膜，最後選定濺鍍法為最好方式，以濺鍍法製作出ZnS薄膜並用XRD確認為單一相後，再摻入氧氣其比例為PO2/Ptotal =1%來形成ZnS1-xOx薄膜並估算x值約為0.2。
鍍製好Zn(S,O)後再將此薄膜取代CdS來鍍製在Cu2ZnSnSe4 (簡稱CZTSe)上，由SEM圖可看出接面間的附著性並不好且從GIXRD圖上來看並沒有明顯的界面擴散，為了改善界面擴散程度及附著性，在充氮環境下分別在400oC及500oC環境下退火兩分鐘，實驗結果從SEM圖得知其附著性皆比退火前好，從XRD圖發現在500oC下Zn(S,O)的峰值消失，而在400oC下Zn(S,O)的峰值仍存在，但從GIXRD圖上來看，界面擴散程度並無明顯增加。

This experiment tried to use multiple methods to make ZnS thin film and dope O to form ZnS1-xOx (Zn(S,O)) thin film, and finally selected Reactive Sputtering as the most fittable method. Form ZnS thin film formed by Reactive Sputtering with XRD and assure if the film was single phase or not. Next dope the oxygen with proportion PO2/Ptotal =1% to form ZnS1-xOx thin film and estimated the value of x was 0.2 approximately.
After Zn(S,O) thin film formed, replaced CdS to form on Cu2ZnSnSe4 (CZTSe). The result revealed the adhesion was not good observed from SEM figure and the interdiffusion was not obvious observed from GIXRD figure. To improve the scale of interdiffusion and adhesion, anneal the factor for two minutes on 400oC and 500oC separately. The result revealed the adhesion was better than before annealing on SEM gragh, the peak value of Zn(S,O) disappeared on 500oC, but the peak value of Zn(S,O) existed on 400oC. However, the scale of interdiffusion did not broaden apparently from GIXRD figure.

論文審定書 I
誌謝 II
中文摘要 III
Abstract IV
目錄 V
圖次 VII
表次 X
第一章 簡介 1
1.1 前言 1
1.2 太陽能電池原理 1
1.3 太陽能電池種類 3
1.4 研究動機與目的 5
第二章 文獻回顧 7
2.1 ZnSxO1-x的材料性質 7
2.1.1 ZnS之材料性質 7
2.1.2 O摻入後之性質變化 9
2.2 ZnSxO1-x製程方式介紹 13
2.2.1 化學水浴沉積法(CBD) 13
2.2.2 濺鍍法(sputtering) 16
2.3 Cu2ZnSnSe4的材料性質 16
第三章 薄膜製程系統、元件製作與分析儀器介紹 20
3.1 薄膜製程系統介紹 20
3.1.1 兩吋共焦濺鍍系統 20
3.1.2 分子束蒸鍍系統 21
3.1.3 電子束蒸鍍系統 21
3.1.4 RTA快速熱退火系統(rapid thermal process) 22
3.1.5 平行濺鍍系統及四吋共焦濺鍍系統 23
3.2 CZTSe前驅層鍍製介紹 24
3.3 薄膜太陽電池疊層介紹 26
3.3 分析方法與儀器介紹 27
3.3.1 穿透光譜儀(Transmition Spectrophotometer) 27
3.3.2 X光繞射分析儀(X-ray diffraction) 28
3.3.3 掃描式電子顯微鏡(SEM) 28
3.3.4 四點探針(four-point probe) 29
3.3.5 顯微拉曼光譜儀(Micro-Raman Spectroscopy) 30
3.3.6 能量解析光譜儀(EDS) 30
3.3.7 歐傑電子能譜儀(AES) 31
3.3.8 I-V量測與模擬光源 31
第四章 實驗結果與討論 32
4.1 實驗流程規劃 32
4.2 以蒸鍍法鍍製ZnS薄膜 32
4.3 以化學水浴法鍍製Zn(S,O)薄膜 34
4.4 以共焦濺鍍系統製作Zn(S,O) 37
第五章 結論 50
參考文獻 51

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