本研究主要為利用多元醇化學法合成奈米銀粒子及奈米銀線，分為兩大部分，第一部分為奈米銀粒子量測分析，以化學還原法製備奈米銀粒子，透過使用PVP作為分散劑，硝酸銀為銀離子添加劑，乙二醇為還原劑及溶劑，進而將奈米銀粒子萃取出來，再由電噴霧製程將奈米銀粒子噴附在印刷電路板上，進行自發式聚集製程法後，使用四點探針量測其電阻值、X射線能量散布分析儀量測其表面成分並藉由掃描式電子顯微鏡獲得奈米銀粒子之形貌；第二部份為奈米銀線之最佳化量測分析，分別利用田口實驗法及均勻實驗設計法以奈米銀線長徑比為目標值進行最佳化分析，探討各因子對於長徑比之影響分析，進一步將奈米銀線製成薄膜，量測其電性及光學性質。本研究結果顯示，合成奈米銀粒使用分子量較低之PVP所合成銀粒粒徑較小且較均勻，當奈米銀粒進行自發式聚集製程時，濃度越高、震盪時間越長，其聚集效果越明顯。利用田口實驗法分析均值得知，以奈米銀線線徑比為目標值望大之最佳化參數為0.21g PVP、0.065g AgCl、0.22g AgNO3，得知其線徑比為72.9 ± 6.6。藉由均勻實驗法以線徑比為目標值分析，影響線徑比控制變因之顯著因子Rank為PVP > AgNO3 > AgCl。進一步將優化出來之Ag NWs製成薄膜，得穿透率約為52%，薄膜厚度約為705.9Å，其片電阻值為53.128 MΩ/sq；穿透率約為18%，薄膜厚度約為2918.0Å，其片電阻值為，20.098 kΩ/sq。

In this study, polyol method was used to synthesize nano-silver. The first part is the analysis of silver nanoparticles (AgNPs) synthesized by polyol method. The ethylene glycol (EG) was reducing agent and solvent. Polyvinylpyrrolidone (PVP) and silver nitrate (AgNO3) were dispersant and silver additive, respectively. Then, the AgNPs were extracted and electrospun on printed circuit board by electrospinning process and then collected by Ostwald ripening process. Next, the sheet resistance of AgNPs was measured by four-point probe. The ingredient of AgNPs was determined by energy-dispersive X-ray spectroscopy and the morphology of AgNPs was observed by scanning electron microscope. The second part was analysis of optimal silver nanowire (AgNWs). The Taguchi and uniform design were adopted to investigate the influence of synthesis parameters on aspect ratio of AgNWs and obtain optimal AgNWs used to fabricate film. Moreover, the electrical and optical properties were measured. This study shows that the diameter of AgNPs synthesized by low molecular weight PVP was small and uniform. For the Ostwald ripening process, the aggregated effect of AgNPs was more obvious with higher concentration and longer time of vibration of AgNPs. For the Taguchi analysis of AgNWs, the optimal parameter was 0.21g PVP, 0.065g silver chlorine (AgCl), 0.22g AgNO3 and 72.9 ± 6.6 aspect ratio. For the uniform design, the rank of influence of parameters on aspect ratio of AgNWs was PVP > AgNO3 > AgCl. Then, the optimal AgNWs were used to fabricate AgNWs transparent conductive film. For the film, the transmittance was 52% when the thickness was 705.9Å and the sheet resistance was 53.128 MΩ/sq. The transmittance was 18% when the thickness was 2918.0Å and the sheet resistance was 20.098 kΩ/sq.

第一章 序論 - 1 -
1.1　前言 - 1 -
1.2　研究背景 - 1 -
1.3　研究動機與目的 - 3 -
1.4　本文架構 - 3 -
第二章 理論基礎與原理 - 4 -
2.1　奈米銀合成製備 - 4 -
2.1.1　多元醇化學還原法 - 5 -
2.1.2　奧斯特瓦爾德熟化 - 6 -
2.3　實驗設計法 - 7 -
2.3.1　田口實驗法 - 8 -
2.3.1.1　直交表 - 8 -
2.3.1.2　品質因子 - 8 -
2.3.1.3　品質特性 - 9 -
2.3.1.4　田口實驗程序 - 10 -
2.3.1.5　田口實驗品質特性分析 - 10 -
2.3.2　均勻實驗法 - 10 -
2.3.2.1　均勻實驗法概論 - 10 -
2.3.2.2　均勻設計表 - 11 -
2.3.2.3　均勻實驗程序 - 12 -
2.3.2.4　均勻設計實驗結果分析 - 13 -
2.2　電紡絲及電噴霧技術原理 - 13 -
2.2.1　電噴霧法 - 13 -
2.2.2　電紡絲技術 - 14 -
第三章 研究方法 - 16 -
3.1　實驗流程架構 - 16 -
3.2　實驗設備與藥品 - 17 -
3.2.1　奈米銀配製之設備及藥品 - 17 -
3.2.2　電紡絲及電噴霧製程之設備 - 20 -
3.3　實驗製程 - 20 -
3.3.1　奈米銀製備流程 - 20 -
3.3.2　奈米銀純化方式 - 21 -
3.3.3　奈米銀粒子量測分析 - 22 -
3.3.3.1　奈米銀粒子自發聚集製程 - 23 -
3.3.3.2　奈米銀粒子之微導電線應用 - 23 -
3.3.4　奈米銀線之最佳化量測分析 - 24 -
3.3.4.1 田口實驗法 - 25 -
3.3.4.2　均勻實驗法 - 26 -
3.4　實驗分析儀器介紹 - 28 -
3.4.1　掃描式電子顯微鏡 - 28 -
3.4.2　能量散布分析儀 - 28 -
3.4.3　四點探針 - 29 -
3.4.4　穿透率系統 - 30 -
3.4.5　色彩輝度計 - 31 -
第四章 實驗結果與討論 - 31 -
4.1　奈米銀粒子量測分析 - 31 -
4.1.1　不同合成材料對奈米銀粒成長的影響 - 31 -
4.1.2　不同PVP分子量對奈米銀粒成長的影響 - 33 -
4.1.3　合成時間與粒徑比較 - 36 -
4.1.4　奈米銀粒自發聚集製程(奧氏熟化) - 38 -
4.1.4.1　表面形貌分析 - 38 -
4.1.4.2　電性量測 - 41 -
4.1.4.3　分析能量光譜散射儀成份分析 - 42 -
4.1.4.4　奈米銀粒附著影響因子 - 43 -
4.1.5　奈米銀粒搭配電紡製程之結果分析 - 46 -
4.1.6　奈米粒之微導線應用 - 47 -
4.2　奈米銀線之最佳化量測分析 - 49 -
4.2.1　合成奈米銀線之材料 - 49 -
4.2.1.1　不同PVP分子量對奈米銀線成長的影響 - 49 -
4.2.1.2　不同晶種材料對奈米銀線成長的影響 - 51 -
4.2.1.3　不同銀來源對奈米銀線成長的影響 - 53 -
4.2.2　田口實驗法分析 - 55 -
4.2.2.1 田口實驗法分析-奈米銀線形貌分析 - 55 -
4.2.2.2 田口實驗法分析-S/N ratio - 61 -
4.2.2.3 田口實驗法分析-均值 - 63 -
4.2.2.4 田口實驗法最佳化 - 65 -
4.2.3　均勻實驗法分析 - 67 -
4.2.3.1 均勻實驗法分析-奈米銀線形貌分析 - 68 -
4.2.3.2 均勻實驗法分析-線性回歸分析 - 73 -
4.2.4　奈米銀線薄膜之電性及光學性質分析 - 75 -
4.2.4.1　奈米銀線薄膜之穿透度分析 - 75 -
4.2.4.2　奈米銀線薄膜之電性與穿透度關係 - 76 -
4.2.4.3　奈米銀線薄膜之LED應用 - 78 -
第五章 結論與未來展望 - 78 -
參考文獻 - 80 -

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