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博碩士論文 etd-0016114-203916 詳細資訊
Title page for etd-0016114-203916
論文名稱
Title
以分子束磊晶成長三氮磊晶薄膜在(La,Sr)(Al,Ta)O3(100)基板之成長與特性分析
Growth and characterization of III-nitride thin filmson (La,Sr)(Al,Ta)O3(100) substrate by plasma-assisted molecular beam epitaxy
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
70
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2013-12-23
繳交日期
Date of Submission
2014-01-20
關鍵字
Keywords
非極性氮化鎵、分子束磊晶法、成長溫度、奈米晶粒、鑭鍶鋁鉭
Molecular beam epitaxy, Non-polar, Growth temperature, LSAT, nanocrystal
統計
Statistics
本論文已被瀏覽 5693 次,被下載 1278
The thesis/dissertation has been browsed 5693 times, has been downloaded 1278 times.
中文摘要
本文介紹以電漿輔助分子束磊晶法(Plasma-Assisted Molecular Beam Epitaxy,PAMBE)在(La,Sr)(Al,Ta)O3(100)基板上成長氮化鎵(GaN)磊晶薄膜特性之研究。LSAT (100)與GaN在 晶格不匹配只有5.26%,且 更只有1.02%,期望能藉由成長一系列改變成長溫度在LSAT (100)基板上成長出a-plane GaN(11-20)。由反射式高能電子繞射(RHEED)圖形觀察改變成長溫度對樣品表面形貌的影響,掃描式電子顯微鏡(SEM)觀察表面形貌會因為改變成長溫度由奈米柱轉變為薄膜的型態。X-ray繞射儀(XRD)以及光致螢光(PL)的分析樣品結構,證實本實驗在LSAT (100)同時成長出c-plane GaN (0001)與a-plane GaN (11-20)兩種結構。觀察a-plane GaN的峰值變化,得知高溫成長GaN較易成長出a-plane GaN。藉由穿透式電子顯微鏡(TEM)觀察高解析度原子影像,發現zinc blende GaN在薄膜與基板界面處形成奈米晶粒,以釋放wurtzite GaN/LSAT晶格不匹配所產生的應力,進而較適合成長c-plane GaN。
Abstract
This article describes that we grew GaN films by Plasma-Assisted Molecular Beam Epitaxy (PAMBE) on the (La,Sr)(Al,Ta)O3 substrate (100) surface. Lattice parameter of (La,Sr)(Al,Ta)O3 are closed to GaN, the lattice mismatch between (La,Sr)(Al,Ta)O3 [1-10] and GaN[0001] only 5.26%, (La,Sr)(Al,Ta)O3[110] and GaN[10-10] only 1.02%.
In this study, we investigate GaN on (La,Sr)(Al,Ta)O3 by Scanning Electron Microscope(SEM), Reflection High Energy Electron Diffraction (RHEED) Photoluminescence (PL), X-ray Diffraction (XRD) and Transmission Electron Microscope (TEM) for different growth temperatures. From the RHEED pattern, we found that the sample was in 2D growth mode and the diffraction result was contributed to two types of pattern. From the SEM images, the surfaces of the grown samples are consisted of the polygonal structures or flat thin films that decided by different growing temperature. From the XRD analysis, the thin films were consist of c-plane GaN and a-plane GaN. Increasing the growing temperature would benefit to the growth of a-plane GaN. In TEM high-resolution image, the zinc blende nano-crystal have been observed in the interface for releasing strains between thin film and substrate.
目次 Table of Contents
論文審定書.....................................................................................................................i
中文摘要………………………………………………………………………….…ii
英文摘要……………………………………………………………………………iii
第一章 簡介 ………………………………………………………….……...1
1-1 前言……………………………………………………………...1
1-2 (La,Sr)(Al,Ta)O3文獻回顧……………………………………...4
1-3 III-nitride在(La,Sr)(Al,Ta)O3基板上成長文獻回顧…………..8
第二章 儀器原理 ……………………………………………………….....17
2-1 掃描式電子顯微鏡…………………………………………….17
2-2 X-ray繞射儀…………………………………………………...19
2-3 光致螢光……………………………………………………….21
2-4 反射式高能電子繞射………………………………………….23
2-5 穿透式電子顯微鏡…………………………………………….24
第三章 實驗結果分析 ……………………………………………………25
3-1 樣品參數……………………………………………………….25
3-2 SEM分析………………………………………………………27
3-3 RHEED分析…………………………………………………...35
3-4 XRD分析……………………………………………………....37
3-5 PL分析………………………………………………………...40
3-6 TEM分析………………………………………………………43
第四章 結論 ………………………………………………………………...45
參考文獻

備註 儀器介紹與實驗步驟 …………………………………………..51
4-1 雙晶薄膜X-ray繞射儀………………………………………..51
4-2 儀器構造……………………………………………………….53
4-3 薄膜磊晶量測流程…………………………………………….57
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http://www.materialsnet.com.tw/download/equipment/XR/TF-XRD/TF-XRD001.pdf
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