圖騰柱無橋功率因數修正轉換器操作於連續導通模式時，常見金氧半場效電晶體之基體二極體開關的反向恢復電流(Irr)有著使用上的難度。由反向恢復電流可能造成的切換損失與低落效率因此限制了圖騰柱無橋功率因數修正器調校應用較新元件的能力。在使用由 Transphorm 公司 TO-247封裝600V IGBT之後即能在功率轉換應用中獲得更多的系統效益。本論文將提供此架構的深入研究，其中包括以氮化鎵高電子移動率電晶體取代TO-247封裝中的金氧半場效電晶體並以碳化矽蕭特基二極體取代快速回復二極體等討論與分析。
為驗證分析，以使用電力電子系統模擬軟體(PSIM 10.0.3)來詳加模擬文中經設計的連續導通模式型圖騰柱無橋功率因數修正轉換器。此圖騰柱功率因數修正器的控制設計由電流控制迴路、電壓控制迴路以及脈波寬度調變所組成以控制各個主開關。傳統升壓式無橋功率因數修正控制研究包含藉由開關切換的操作控制以維持高功率因素。文中模擬波型皆是在電力電子系統模擬軟體(PSIM 10.0.3)中模擬運行5秒的結果。其中以電力電子系統模擬軟體(PSIM 10.0.3)運行模擬TO-247封裝氮化鎵高電子移動率電晶體的結果、非理想元件特性波型與效率皆與Transphorm工程師所說明相符。模擬結果與分析計算相互比較評估，圖騰柱功率因數修正器適用於連續導通模式，並能藉由使用氮化鎵高電子移動率電晶體封裝來達到高功率品質之效。模擬電路的輸出電壓為407V而當負載額定約950W時功率因素依然高於97.24%。當開關切換頻率設計高達100k赫茲時，量測計算的效率甚至可高達98.74%。

The Totem-Pole bridgeless Power Factor Correction (PFC) converter inherits the MOSFET built in body diode reverse-recovery current (Irr) at Continuous Conduction Mode (CCM). The Irr issues limit the Totem Pole PFC to be adapted in the newest technological devices due to switching losses and low efficiency. The introduction of the first 600V transistor in a TO-247 package by Transphorm, shaped the Totem-Pole PFC in CCM operation attaining greater system benefits in power conversion application. This thesis will provide an insight approach by implementing the GaN HEMT in a TO-247 package replacing the MOSFET and SiC Schottky diode replacing the fast recovery diodes in this topology.
To verification a universal CCM totem pole bridgeless PFC converter is design and simulated using PSIM 10.0.3 software. The control design for the totem pole PFC consists of a current control loop, voltage control loop and Pulse width modulation (PWM) to control main switches to be active at every positive or negative half cycle. The traditional boost bridgeless PFC control encompass by PWM signal to operate switches in order to maintain very high PFC as proposed. The simulation waveforms were obtained after five seconds of simulation in PSIM 10.0.3. It is clearly noticed that PSIM 10.0.3 print the characteristic of non-ideal components waveforms and efficiency for the GaN HEMT in a TO-247 package as explained by Transphorm engineers. Simulation results compared with calculation, it’s notable that the totem-pole PFC is applicable at CCM operation, attaining high power qualities by using GaN HEMT package. The output voltage is 407V and PF higher than 99.44% when the load is approximately 950W. The measured efficiency achieves 98.74% at high line conduction with switching frequency 100kHz.

Contents Pages
Declaration.................................................................................................................................ii
Acknowledgements...................................................................................................................iii
Abstract (Chinese).........................................................................................................................iv
Abstract (English)...........................................................................................................................v
Table of contents.......................................................................................................................vi
Table of figures..............................................................................................................................ix
Tables of tables..........................................................................................................................xi
List of symbols.........................................................................................................................xii

CHAPTER 1 Introduction
1.1 Background..............................................................................................................1
1.2 Motive......................................................................................................................2
1.3 Thesis Structure...................................................................................................... 3

CHAPTER 2 Bridgeless Boost topologies overview
2.1 Bridgeless Boost topologies PFC overview............................................................4
2.2 Conventional PFC Boost rectifiers………..............................................................5
2.3 Bridgeless PFC Boost Converter............................................................................6
2.4 Semi- Bridgeless PFC Boost Converter..................................................................7
2.5 Dual Boost Bridgeless PFC with bidirectional switch............................................9
2.6 Pseudo Totem-Pole bridgeless PFC Topology......................................................10
2.7 Totem-Pole Bridgeless Boost PFC Topology…………………………................11
2.8 Totem-Pole Bridgeless PFC issues ……………………………….……..............13
2.9 Bridgeless PFC component summary... ………………………………................14

CHAPTER 3 GaN HEMT-based Totem-pole PFC Converter
3.1 GaN HEMT device overview................................................................................ 16
3.2 Transphorm GaN HEMT device benefits .............................................................17
3.3 Totem-Pole PFC topology with GaN HEMT switches..........................................18
3.4 Totem-Pole PFC with GaN HEMT operation mode analysis…...........................19
3.4.1 Positive AC line half cycle operation....................................................................20
3.4.2 Negative AC line half cycle operation...................................................................21
3.5 Input and out power assumption……....................................................................22
3.5.1 Parameters design estimations............................................................................22
3.6 Duty Ratio design...................................................................................................23
3.7 Inductor design......................................................................................................27
3.8 Capacitor design ……………………………………............................................29
3.9 selection of diode………………………………………………………...............30
3.10 Power switch Selection…………………………………......................................31
3.11 Power Factor application.. ………………………………....................................34
3.12 Active Power Factor Correction............................................................................35

CHAPTER 4 Simulations
4.1 GaN HEMT and SiC Diode Schottky Parameter.......................................................36
4.2 Totem-Pole PFC with GaN HEMT and SiC Diode topology….............................37
4.3.1 Totem-Pole PFC with GaN HEMT control model................................................38
4.3.2 Control Model analysis............................................................................................ 39
4.4 Totem-pole PFC with GaN HEMT device waveform ............................................40
4.5 Inductor current characteristics…………………………...........................................41
4.6 Inductor, Capacitor and Diode waveforms…………………………........................42
4.7 Zero Voltage Switching (ZVS)………………………………...................................43
4.8 Totem-Pole PFC with GaN HEMT efficiency…………………..............................45
4.9 Totem-Pole PFC analysis.............................................................................................46

CHAPTER 5 Switching losses analysis
5.1 GaN HEMT circuit losses model...........................................................................47
5.2 Inductor and Switching transient.......................................................................... 48
5.3 Hard switching Figure-Of-Merit (FOM)...............................................................49
5.4 Turn-on energy losses............................................................................................52
5.5 Turn-off energy losses……………………….......................................................54
5.6 Ringing losses ……………………………………...............................................55
5.7 GaN HEMT device total energy loss... ………………………………................56



CHAPTER 6 Energy losses Calculations and Simulation

6.1 GaN HEMT losses analysis…….................................................................................57
6.2 Energy losses Classification……................................................................................58
6.3 Energy losses calculation…….....................................................................................60
6.4 Switching Energy losses solution summary..............................................................61
6.5 Total energy loss for each half cycle ……………….................................................63
6.6 MOSFET (CREE 900V) application…………………………..................................64
6.7 MOSFET (CREE) energy losses calculation…………………………....................66
6.8 MOSFET energy losses solution analysis…………….............................................68
6.9 MOSFET (Infineon) Energy losses…………............................................................70
6.10 Transistors Energy losses comparison…...................................................................70
6.11 Descriptive analysis of Energy losses……..............................................................71

CHAPTER 7 Conclusion
7.1 Summary……........................................................................................................72
7.2 Contribution of thesis............................................................................................ 73
7.3 Novelty of work..................................................................................................... 74
7.4 Future work............................................................................................................ 74
7.5 References………..................................................................................................75
Appendix 1 ………..................................................................................................81
Appendix 2………...................................................................................................82

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