本研究利用氮電漿輔助分子束磊晶系統，在m面藍寶石基板上成長m面氮化鎵薄膜。成長過程中，氮電漿功率和成長溫度為調控的變因，接著於m面氮化鎵薄膜成長氮化鎵摻雜錳薄膜。稀磁性半導體材料生長過程中避免二次相形成是重要一項課題，我們藉由控制氣動閥門開關將錳元素摻雜至氮化鎵薄膜抑制錳相關的二次相形成。
氮化鎵薄膜利用掃描式電子顯微鏡觀察樣品表面形貌及量測薄膜厚度，藉由高解析x射線系統確認樣品的成長方向、量測軸向的擺盪曲線其實驗數據檢視證明薄膜中無形成明顯的錳相關二次相。非極性氮化鎵具有光學各向異性，利用拉曼散射光譜分析薄膜表面不同軸向所受之應力；其實驗數據支持錳離子成功取代氮化鎵六方烏采結構晶格中鎵離子的位置。超導量子干涉儀的磁矩-磁場量測其鐵磁性。


關鍵字:分子束磊晶，m面氮化鎵，非極性，m面藍寶石

In this research, we grow m-plane gallium nitride on m-plane sapphire substrate using plasma-assisted molecular beam epitaxy (PAMBE)system with different plasma power and growth temperature. Then, we grow m-GaN doped Mn on the m-plane gallium nitride. A challenging issue in the growth of diluted magnetic semiconductors (DMSs)is secondary phase, and we suppress secondary phase controlling cell shutter to doped with Mn.
GaN films are observed with their formation of surface and thickness. The crystal orientation and rocking curve are detected using high resolution X-ray diffraction (HRXRD). There are no observable secondary phase in the result of HRXRD. Nonpolar gallium nitride is anisotropy and calculating stress of film using Raman spectrum. The results of Raman scattering spectrum support Mn atoms substitutes Ga sites of GaN hexagonal structure. The results of superconductor quantum interference device (SQUID)show the ferromagnetic behavior at room temperature.

Keywords: molecular beam epitaxy, m-plane GaN, nonpolar, m-plane sapphire

論文審定書 i
摘 要 ii
Abstract iii
目錄 iv
圖目錄 vi
表目錄 viii
第一章 序論 1
1.1 前言 1
1.2 m面氮化鎵光電學特性 3
1.3 稀磁性半導體發展 5
1.4 稀磁性半導體材料應用 7
第二章 儀器介紹 9
2.1 分子束磊晶系統 (plasma assisted molecular beam epitaxy, PAMBE) 9
2.2 掃描式電子顯微鏡 (scanning electron microscopy, SEM) 10
2.3 高解析X光繞射 (high-resolution X-ray diffraction, HRXRD) 11
2.4 拉曼光譜學 (Raman spectroscopy) 13
2-5 陰極螢光 (cathodoluminescence, CL) 15
2-6 能量散佈光譜儀 (energy dispersive spectrometer, EDS) 16
2-7 超導量子干涉儀 (superconductor quantum interference device magnetometer, SQUID) 17
第三章 樣品成長與參數 18
3.1 改變氮電漿功率之m面GaN薄膜成長過程與參數 18
3.2 改變成長溫度之m面GaN薄膜成長過程與參數 19
3.3 改變錳檔板時間於m-GaN模板上成長GaN:Mn成長過程及參數 20
第四章 量測與分析 22
4.1 改變氮電漿功率之掃描式電子顯微鏡 22
4.2 改變氮電漿功率之高解析X光繞射光譜 26
4.3 改變氮電漿功率之拉曼散射光譜 29
4.4 改變成長溫度之掃描式電子顯微鏡 31
4.5 改變成長溫度之高解析X光繞射光譜 33
4.6 改變成長溫度之拉曼散射光譜 34
4.7 改變錳檔板開啟時間之掃描式電子顯微鏡 36
4.8 改變錳檔板開啟時間之高解析X光繞射光譜 39
4.9 改變錳檔板開啟時間之陰極螢光光譜 48
4.10 改變錳檔板開啟時間之拉曼散射光譜 50
4.11 改變錳檔板開啟時間之超導量子干涉儀量測 52
第五章 結論 53
參考文獻 54

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