本論文探討了微波電漿輔助化學氣相沈積（MPCVD）系統在n+(111)重摻雜矽基板上沈積P型鑽石薄膜和N型鑽石薄膜的PN接面元件製作。P型鑽石薄膜以B（OCH3）3 為摻雜源，而N型鑽石薄膜以氨氣為摻雜源，利用掃描式電子顯微鏡（SEM）觀察鑽石薄膜表面結構，電流-電壓（I-V）量測分析PN接面鑽石薄膜整流特性，陰極螢光光譜(CL)量測發光材料的發光波長光譜、缺陷分析，以及霍爾量測分析載子的漂移率和載子濃度。在本論文中成功製作，以N型鑽石薄膜為底層結構，P型鑽石薄膜為頂層結構的樣品，於真空中接續成長PN接面鑽石薄膜，在I-V特性上觀察到順向起始電壓為0.5 V，逆向崩潰電壓6V，由I-V量測得知確認PN接面之整流特性，進一步再由CL光譜分析上觀察發現一發光波峰在285 nm (4.4 eV)，為施體-受體之間的復合所產生的CVD鑽石的能帶特性峰，以及一500 nm(2.5 eV)波峰的鑽石缺陷特性峰。

This work has employed the Micro-wave Plasma enhanced Chemical Vapor Deposition (MPCVD) method to fabricate diamond PN junction device. The n+ <111> orientation single-crystal silicon has used as substrates. P-type diamond layer is doped with B(OCH3)3 and the N-type diamond layer is doped with ammonia. The surface structure of diamond film has been observed by scanning electron microscope; and the device rectification property of a PN junction has measured by current-voltage characteristic. The carrier density and mobility of diamond films have been analyzed by Hall measurement. Furthermore, the Cathodoluminescence (CL) spectroscopy showed the defect spectra in diamond PN junction. The N-type diamond film and P-type diamond film have deposited at temperature of 800 ℃, for 30 minutes and 90 minutes, respectively. The process CVD has performed in the same chamber continually. A I-V curve of sample showed the set on positive voltage 0.5 V and the reverse breakdown voltage of 6 V. Further, CL results revealed a peak at 285 nm (4.4 eV), which represents the CVD diamond band and the other one is at 500 nm (2.5 eV), which stands for donor-acceptor recombination from defect in these diamond films.

中文摘要 I
Abstract II
目錄 III
表目錄 VI
圖目錄 VII
第 一 章 緒 論 1
第 二 章 P-N鑽石接面文獻回顧 3
2-1 摻雜氮和硼之鑽石薄膜 3
2-2 金屬/鑽石膜接觸 4
2-2.1 歐姆接觸( Ohmic Contact ) 4
2–2.2 整流接觸( Rectify Contact ) 5
2-3 霍爾效應 6
2-4 鑽石薄膜之電性 8
2-4.1 鑽石膜之負電子親和力特性 8
2-4.2 表面結構與電傳導特性之關係 8
2-4.3 硼摻雜鑽石膜之電傳導特性 9
2-4. 4 鑽石於半導體元件上之應用 9

第 三 章 研究方法與實驗步驟 11
3-1 實驗方法 11
3-1.1 微波電漿輔助化學氣相沈積 ( MPCVD )系統 11
3-1.2 鑽石薄膜沈積原料 12
3-2 實驗步驟 12
3-2.1 基材之前處理 12
3-2.2 實驗條件 12
3-2.3 實驗操作步驟 12
3-2.4 金屬電極製作 13
3-3 薄膜性質分析 14
3-3.1 掃瞄式電子顯微鏡 14
3-3.2 電流-電壓量測儀 15
3-3.3 陰極發光(Cathodoluminescence ，簡稱CL) 15
第四章 結果與討論 18
4-1 N型鑽石薄膜的成長 18
4-1.1不同偏壓和溫度影響 18
4-1.2不同沈積時間影響 18
4-1.3 不同流量影響 19
4-1.4 鑽石薄膜室溫霍爾量測結果 19
4-2 P型鑽石薄膜特性分析 20
4-2.1 不同摻雜濃度 20
4-2.2 不同沈積時間 20
4-2.3 鑽石薄膜室溫霍爾量測結果 21
4-3 PN 接面鑽石薄膜特性分析 21
4-3-1 Sample A / PN接面鑽石薄膜電傳導特性分析 22
4-3-2 Sample B / PN接面鑽石薄膜電傳導特性分析 23
4-3-3 展望 25
第五章 結論 26
參考文獻 27

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