本研究開發一個封裝製程技術，整合離子感測場效電晶體與微流體晶片，並創造出平坦化的微流道，本研究更進一步將晶片應用在酸鹼與流體流速量測。除此之外，晶片透過氧氣電漿處理，可提高酸鹼量測之效能和量測範圍。本論文提出一個創新的平面化封裝製程，將離子感測場效電晶體與微流道整合。但將電晶體晶片封裝於微流體流道內是一個挑戰，因電晶體晶片尺寸小，所以容易造成微流體流道液體洩漏。本研究開發的平面封裝製程，將晶片放置在印刷電路板所刻出的孔洞內，並用PDMS為封裝材料去做填補。結果顯示晶片和周圍PDMS的交界處，此高低落差低於5 μm，故微流體流道在平面封裝進行過程，達到密封且流體不外洩。在pH測量的研究中，使用的離子感測場效電晶體透過台積電標準製程(0.35 μm, 2P4M)製作，並成功地利用簡單的後處理，解決了自然氧化氧化鋁感測薄膜在酸鹼量測中受到破壞的問題。本研究利用氧氣電漿，增加氧化鋁層的緻密度，使pH值測量範圍獲得提升，從pH 6 ~ 8提升至pH 4 ~ 10。最佳的氧電漿處理參數為100 W且時間為20 min，量測線性度達0.9892。除此之外，在流速應用的研究中，離子感測場效電晶體與微流道的整合晶片，可用於流速緩慢之流體流速量測，流體種類包括丙酮、乙醇、甘油、去離子水和離子溶液等。結果顯示，此流速計的量測範圍在66到1700 μm/s之間，且具有不錯的再現性。本研究所開發的平面化封裝製程可以在40 min內完成，此研究提供了一種簡單而有效的封裝方法，將積體電路晶片整合至微流體系統中，並應用於pH計和流速計上。

This study developed a fast and microfluidic planarization packaging process that integrates the microfluidic systems and solid-state ISFET. It applies not only in flow measurement, but also improves the measurements in pH by oxygen plasma treatment. This study presents a solid-state ISFET IC fabricated with an innovative planar packaging process. It is a challenge to integrate a CMOS chip with the microfluidic channel since the physical dimension of the CMOS chip may cause the leakage during packaging with microfluidic channel. This study develops a planar packaging process which uses PDMS as the adhesive to embed the IC chip in a cavity over the PCB. Result shows that the height variation between the IC chip and the surrounding PDMS was less than 5 μm such that microfluidic channel can be sealed without leakage with the developed planar package process. In this study of pH measurement, the ISFET IC was fabricated with a standard 0.35 μm 2P4M foundry process by TSMC, and it successes to use a simple post-treatment to solve the damage problem of native Al2O3 sensing membrane. Through the oxygen plasma treatment, it increases the thickness of the Al2O3 layer so that the measurement of pH range improves from pH 6~8 to pH 4~10. The best parameters of oxygen plasma treatment is that the power is 100 W for 20 minutes, and the linearity of the measurement is 0.9892. Additionally, in the study of flow rate measurement, the sealed ISFET chip is used for measuring the flow rate of solutions including acetone, ethanol, glycerol, DI water and ion solution of slow flow rate. Results show that the flow rate measurement exhibited good reproducibility in the flow rate ranging from 66 to 1700 μm/s. Moreover, the whole packaging process can be achieved in 40 min. The developed method provides a simple yet efficient method to integrate CMOS IC chip with microfluidic systems to apply in pH meter and flow meter.

中文摘要 i
ABSTRACT ii
目錄 iv
圖目錄 vii
符號表 x
簡寫表 xi
第一章 緒論 1
1-1 前言 1
1-2 離子感測場效酸鹼感測器 2
1-2-1 ISFET離子感測場效電晶體 2
1-2-2 EGFET延伸式閘極離子感測場效電晶體 4
1-3 CMOS IC與微流體系統封裝 6
1-4 微流體流速計之介紹 9
1-5 論文架構 13
1-6 研究動機與目的 14
第二章 材料特性與理論基礎 15
2.1 離子感測場效電晶體量測原理 15
2.2 吸附鍵結與電雙層模型 16
2.3 參考電極 20
第三章 封裝製程與實驗架設 21
3.1 ISFET pH量測 21
3.1.1本研究使用之ISFET IC 21
3.1.2 CMOS ISFET之pH量測架設 23
3.2微流體系統與CMOS ISFET IC封裝製程 24
3.2.1 PDMS微流道製作 24
3.2.2 CMOS ISFET IC與微流道平坦化封裝製程 25
3.3 ISFET流速計量測 28
3.3.1本次流速計實驗使用的ISFET IC 28
3.3.2流速感測器量測架設 29
第四章 結果與討論 31
4.1 無氧電漿處理ISFET鋁感測薄膜酸鹼量測之受損分析 31
4.2氧氣電漿處理後對於ISFET鋁感測薄膜酸鹼量測影響 35
4.3氧電漿處理時間長短與酸鹼量測的關係 38
4.4 CMOS ISFET IC與微流道封裝平整度量測 44
4.5無離子極性溶液在微流體晶片內流速量測 46
4.5.1 乙醇在微流體晶片內流速量測 46
4.5.2 甘油在微流體晶片內流速量測 49
4.5.3 異丙醇、丙酮、乙二醇之流速量測 50
4.6 同參考電壓下，多種溶液流速量測比較 52
4.7 同參考電壓下，多種溶液在靜止狀態起始電流值 53
4.8 乙醇濃度測量 54
4.9 去離子水在微流體晶片內的流速量測 55
4.10 電解質溶液在微流體晶片內的流速量測 56
第五章 結論與未來展望 59
5.1 結論 59
5.2 未來展望 61
參考文獻 62

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