在手機中，放大器應用磷化銦鎵的異質接面雙載子電晶體，已經成為最主流的技術，現今產品的需求，晶片尺寸逐漸的驅向最小化，驅使整個產業，朝向在同一晶片上，整合空乏型與增強型的擬態高速移動電子電晶體和雙載子電晶體。這種整合型的電晶體將提供設計者，在設計整合型晶片時，將有更廣泛的運用空間。 本篇論文將探討由各種不同結構組合的整合型元件，及其在製程、特性和功能的比較。此整合型元件的架構在製程中最有挑戰性的部份，是閘極的微影製程及聚醯亞胺提供平坦化製程。多閘極製程的挑戰，是來自於近2um 高低差的層別，使用雙層的光阻微影技術，將使底部形成良好的 0.5 微米的多閘極間距。在聚醯亞胺製程中； (1)本身除了可當介電質層外，(2)可降低金屬層間交互影響的寄生電容，(3)平坦化晶圓表面，有利於金屬分流的運用。可提供設計者在設計晶片時的機動性、靈活性、高功能性，並可降低晶片尺寸。此外，將探討整合型元件和最佳化後的特性。例如:電特性，包含直流、小訊號、雜訊及功率的特性等等。 最後製作結果顯示，本篇論文提供了很大潛能的設計空間，在發展新的射頻電路設計技術。

The InGaP Heterojunction Bipolor Transistors (HBTs) become known as the dominant technology in handset power amplifiers. Modern application requirements and size limitations have driven industry leaders towards the co-integration of enhance/depletion mode pHEMT and HBT. The combination of BiFET gives an additional degree of freedom in the design of advanced power amplifiers combine switch.
This dissertation provides an overview of the various techniques. Critical processes included gate photolithography and Polyimide planarize process are discussed in detail. The 0.5-μm multiple gate fingers fabricated on the controllable small un-gated region of a high-topology wafer was overcome by using a bi-layer photolithography process. The fabricated of polyimide was used as the dielectric interlayer to reduce the interconnect crossover parasitic capacitance and planarize the second metal process for metal shunt application. The metal shunt structures provide greater functionality and design flexibility under shrinking. Finally, presents the combine the best features of InGaP HBT-pHEMT integration technology. The HBT and E/D-pHEMT electrical performances (DC, small signal, noise, and power) are presented. The results indicate that this technology offers great potential and degrees of freedom to design power amplifiers, high-integrated RF transceivers, and opportunities for the development of novel RFIC circuits.

Table of contents
Acknowledge................................................................................................
II
中文摘要.......................................................................................................
III
Abstract........................................................................................................
IV
Table of contents.........................................................................................
V
List of figures...............................................................................................
VIII
List of tables……………………………………………………………….
XI
Chapter 1 Introduction………………………………….……………
1
1.1 Overview…………………………………………………...………….
1
1.2 Motivations of Integration InGaP HBT-pHEMT………..………….
2
1.3 Synopsis of the Dissertation……...………………………………..….
3
Chapter 2 Optimization of high ruggedness InGaP HBT.....…
5
2.1 Introduction.......................................................................................…
5
2.2 Device design and fabrication..........................................................…
6
2.2.1 Epitaxial structures design...…………………………..…………
6
2.2.2 Fabrication process technologies...............................................…
8
2.2.3 Chip architecture and layout design...........................................…
10
2.2.4 Over-voltage protection circuit..................................................…
12
2.3. Results and Discussions...……………………………………………
14
2.3.1 Device characterization and result.............................................…
14
2.3.2 DC/RF device characteristics.....................................................…
16
VI
2.3.3 Ruggedness characteristics........................................................…
21
2.3.4 Performance of high ruggedness power amplifiers...…………….
22
2.4 Summary............................................................................................…
25
Chapter 3 Optimization of high linearity InGaP HBT...........…
26
3.1 Introduction...........................................................................................
26
3.2 Device design and fabrication…………………………………..........
27
3.2.1 Epitaxial structures design……………………………………….
27
3.2.2 Fabrication process technologies...................................................
31
3.2.3 Chip Architecture and Layout Design............................................
32
3.3 Results and Discussion..........................................................................
34
3.3.1 Test system Setup...........................................................................
34
3.3.2 DC/RF device characteristics.........................................................
35
3.3.3 Performance of high linearity power amplifiers............................
36
3.4 Summary................................................................................................
40
Chapter 4 Optimization of E-/D-mode pHEMT.........…
41
4.1 Introduction...........................................................................................
41
4.2 Device design and fabrication..............................................................
42
4.2.1 Epitaxial structure design...............................................................
42
4.2.2 Fabrication process technologies…...............................................
45
4.3 Results and discussion...........................................................................
46
4.3.1 Device characteristics…………………………………................
46
VII
4.3.2 Load-pull characteristics................................................................
50
4.3.3 SPDT High Power Switches characteristics. ............................…
51
4.3.4 Drain transit time test………………………………………….…
55
4.4 Summary................................................................................................
57
Chapter 5 Optimization of integration InGaP HBT–pHEMT.
59
5.1 Introduction.................................................................................…......
59
5.2. Device design and fabrication.............................................................
61
5.2.1 Epitaxial structure design...............................................................
61
5.2.2 Fabrication process technologies...................................................
63
5.3 Results and Discussions........................................................................
64
5.3.1 Device Structure.............................................................................
64
5.3.2 HBT and Power Amplifier Characteristics…................................
67
5.3.3 E/D-mode pHEMT Device Characteristics...................................
71
5.3.4 SPDT High Power Switches..........................................................
74
5.4 Summary................................................................................................
76
Chapter 6 Conclusion and Future work..........................................
78
6.1 Conclusion.............................................................................................
78
6.2 Future work……………………………………………...………........
80
Reference...………………………………………………………………...
82
Publication List...………………………………………………………….
93

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