本文將討論以電漿輔助分子束磊晶系統在鋁酸鋰基板上成長之氮化鎵的特性。首先我們試著改變氮/鎵流量比，期望能藉由改變成長參數進而抑制奈米晶體的數量及大小以及提高沿[1-100]方向成長的氮化鎵的品質。我們發現到隨著氮/鎵流量比下降, 較有利於[1-100]方向成長的氮化鎵的成長，不利於[000-1]方向成長的氮化鎵的成長。
而進一步的研究指出，在進入電漿輔助分子束磊晶系統前先以磷酸與水為1:50的比例去蝕刻鋁酸鋰基板的表面一分鐘,較適合[1-100]方向成長的氮化鎵，能有效抑制[000-1]方向成長的氮化鎵成長。
最後一個系列的樣品，我們將鋁酸鋰基板在進入電漿輔助分子束磊晶系統前先浸泡去離子水十分鐘，研究發現有助於改善[000-1]方向成長的氮化鎵。

We invistegated the characteristic of GaN grown on LiAlO2 substrate by molecular epitaxy beam. First of all , we try to changed the growth ratio and concluded some relation between the quality of thin film. We expect to improve the quality of M-plane GaN and the size and density of c-plane GaN single-crystals by changing growth conditions. we found that when the N / Ga flow ratio decreased, that is much favor to the growth of M-plane GaN, is not favor to the growth of c-plane GaN.
Further research indicates that, on entering the PA-MBE growth prior to phosphoric acid ratio of 1:50 with water to etch the surface of LAO substrate for a minute, is more suitable for M-plane GaN growth, can effectively inhibit Growth of c-plane GaN.
The last series of samples, we will LAO substrate into PA-MBE system, DI water before soaking for ten minutes, we found the study can help to improve the c-plane GaN growth.

中文摘要 i
英文摘要 ii
致謝詞 iii
目錄 iv

第一章 簡介 1
1-1 III-Nitride的優點及應用 1
1-2 c-plane GaN的缺點 2
1-3 γ-LiAlO2 上成長M-plane GaN 3
第二章 儀器原理 5
2-1 X光繞射分析 5
2-2 掃描式電子顯微鏡 7
2-3 原子力顯微鏡 10
第三章 實驗儀器與步驟 12
3-1 X光繞射儀 12
3-2 掃描式電子顯微鏡 16
3-3 原子力顯微鏡 20
第四章 實驗結果分析與討論 24
4-1 樣品系列 24
4-2 N/Ga flux ratio 的影響 25
4-3 酸處理的影響 30
4-4 LAO酸處理後的表面特性 36
4-5 c-plane成長 38
第五章 結論 40

參考資料 41

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