Title page for etd-0122108-062049


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URN etd-0122108-062049
Author Shu-Ching Lin
Author's Email Address No Public.
Statistics This thesis had been viewed 4892 times. Download 1220 times.
Department Electro-Optical Engineering
Year 2007
Semester 1
Degree Master
Type of Document
Language English
Title Investigation on the ZnO Thin Film for Optoelectronic Device Application
Date of Defense 2007-12-26
Page Count 70
Keyword
  • Znic Oxide
  • ZnO
  • sol-gel
  • Abstract In recent years, transparent and conductive layers of some metallic oxide, such as cadmium oxide, indium oxide, tin oxide and zinc oxide, can be used for semiconducting transparent coatings. Transparent electronics are nowadays a crucial technology for the next generation of optoelectronic devices.
    Zinc oxide (ZnO) is a II-VI compound semiconductor with a wide direct bandgap of 3.37 eV. Therefore, ZnO based transparent thin film transistors (TFTs) have been studied extensively. For the wide variety of applications, numerous ZnO films preparation methods have been attempted. In this thesis, the devices of ZnZrO active channel layers were fabricated by the sol-gel spin-coating method. These ZnZrO TFTs were fabricated by bottom-gate bottom-contact-type TFTs.
    The Experimental results have shown that the electrical properties of the ZnZrO TFTs are strongly dependent on visible light and ambient oxygen. In addition, in this study, the results concerning the influence of temperature on the electrical properties of ZnZrO TFTs also have been discussed. Finally, except for the application of switch devices, the ZnZrO TFTs by sol-gel spin-coating process exhibits a potential application for gas sensors.
    Advisory Committee
  • An-Kuo Chu - chair
  • Jung-Fang Chang - co-chair
  • Cheng-Tung Huang - co-chair
  • Ting-Chang Chang - advisor
  • Files
  • etd-0122108-062049.pdf
  • indicate accessible in a year
    Date of Submission 2008-01-22

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