本篇論文主旨在利用標準 0.18um CMOS 製程設計應用於超寬頻系統前端接收器之低雜訊放大器。此低雜訊放大器是以兩級放大為主架構，第一級為電感退化性架構加上R-feedback，是為了輸入端阻抗匹配，第二級為傳統的CS架構，可以增加順向增益(S21)，輸出端匹配是使用LC-section。為了改善高頻增益，在第一級與第二級中間利用series-peaking的方法去實現。我們所設計的低雜訊放大器，供應電壓VDD為1.8伏特，整個電路消耗功率約為24.3mW，及整個電路大小約為1.283*1.008 mm2。本研究的低雜訊放大器所模擬的規格，S11為 -8dB以下，S22為 -10dB以下，順向增益(S21)在3.1-10.6GHz時為12.6dB~15.3dB，逆向隔離(S12)為 -30dB以下，而雜訊指數為3.24dB~4.84dB。

The objective of this thesis is aimed at the design of low noise amplifier (LNA) for an ultra-wideband (UWB) receiver system using standard 0.18um CMOS process. A two amplified stage topology is proposed in the low noise amplifier. The first stage introduces inductively source degeneration and resistive-feedback, it can achieve wideband input impedance matching. The second stage introduces traditional CS configuration, it can improve the forward gain (S21). The second stage also used L-C section for output match. In order to improve the gain at high frequency, we introduces the series peaking between the first stage and second stage. The total power dissipation of the low noise amplifier is about 24.3mW at power supply 1.5 volt and the chip size is 1.283*1.008mm2. The simulated result shows that S11 is under -8dB, S22 is under -10dB, the forward gain S21 is 12.6dB~15.3dB at 3.1-10.6GHz, the reverse isolation S12 is under -30dB, and the noise figure is 3.24dB~4.84dB.

Contents
摘要.......................................................................................I
Abstract...............................................................................II
Contents............................................................................III
List of Figure.....................................................................VI
List of Table.......................................................................X
Chapter 1 Introduction....................................................1
1.1 Ultra-Wideband Communication System.............1
1.2 Motivation.....................................................................2
1.3 Thesis Organization...................................................4
Chapter 2 Concept of RF IC Design.............................5
2.1 Noise.............................................................................5
2.1.1 Noise Figure.............................................................5
2.1.2 Noise type.................................................................8
2.2 linearity........................................................................13
2.2.1 Harmonics..............................................................13
2.2.2 Gain Compression...............................................14
2.2.3 Intermodulation.....................................................15
2.2.4 Third intercept point (IP3)....................................17
2.2.5 Cascaded Nonlinear Stages..............................18
Chapter 3 Low Noise Amplifier Design.....................20
3.1 Introduction................................................................20
3.2 Consideration in Low Noise Amplifier.................21
3.2.1 Impedance Matching............................................21
3.2.2 Stability....................................................................25
3.3 Low Noise Amplifier Topology...............................27
3.3.1 Basic Topologies of Low Noise Amplifier........27
3.3.2 Inductively source degeneration LNA Noise
Analysis...................................................................31
3.4 Shunt-Peaked Architecture......................................36
3.5 Recent Wide-Band LNA Design.............................39
Chapter 4 The proposed UWB CMOS LNA with
series-peaking technique...........................44
4.1 Circuit topology...........................................................44
4.1.1 Input match..............................................................46
4.1.2 Series peaking........................................................49
4.1.3 Gain Analysis...........................................................52
Chapter 5 Simulation Results and Discussion.........54
Chapter 6 Conclusion.....................................................62
Reference...........................................................................63

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