Title page for etd-0127104-231706


[Back to Results | New Search]

URN etd-0127104-231706
Author Tsung-Shian Liu
Author's Email Address julyfour2001@yahoo.com.tw
Statistics This thesis had been viewed 4668 times. Download 1249 times.
Department Physics
Year 2003
Semester 1
Degree Master
Type of Document
Language English
Title Study on the nitrogen doped CVD diamond
Date of Defense 2004-01-16
Page Count 102
Keyword
  • n-type diamond
  • Abstract In this work, argon, hydrogen and methane are used as gas sources and nitrogen is used as the doping source. Microwave plasma chemical vapor deposition and two-steps deposition processes have been applied to grow the nitrogen-doped diamond thin film on n-type (111) silicon substrate. Systematical experiments are performed to study the dependence of grown process on working pressure, temperature, microwave power, DC bias, the duration of growth time and the flow rates of gas mixture of argon, methane and nitrogen. The nitrogen-doped diamond thin films are examined by SEM, XRD, Raman and I-V. Raman spectroscopy is the most efficient tool for analyzes the quality of diamond thin films growth. The results show that a positive DC bias can enhance the doping concentration and the qualities of diamond thin films. Form the analyzing results, nitrogen is doped in the sp2 structural grain boundaries of crystallites. The longer diamond thin film grown is, the crystallites become larger and the grain boundaries become smaller, that leads to the larger resistivity of the thin films.
    Advisory Committee
  • Ting-Chang Chang - chair
  • Ying-Chung Chen - co-chair
  • Tai-Fa Young - advisor
  • Der-Jung Jangd - advisor
  • Files
  • etd-0127104-231706.pdf
  • indicate access worldwide
    Date of Submission 2004-01-27

    [Back to Results | New Search]


    Browse | Search All Available ETDs

    If you have more questions or technical problems, please contact eThesys