(La0.67Sr0.33MnO3)&#8226;(SrO) 簡稱LSMO214(n=1) 為2-D磁性絕緣體，與La0.67Sr0.33MnO3及La0.67Ca0.33MnO3之3D結構類似，只是在Mn-O八面體之間形成2-D之層，層與層中間有絕緣之Sr-O八面體之層相隔。其單相塊材的合成極不易，常混合2 < n <

(La0.67Sr0.33MnO3)˙(SrO), LSMO214(n=1) in short, is 2-D magnetic insulator with a structure very similar to the 3D La0.67Sr0.33MnO3 and La0.67Ca0.33MnO3, 113(n=1) in short, which consists of superstructure of a subsequent magnetic layers and insulating layers. Forming a single 214 phase bulk is not easy, a mix phase of 2<n<∞ compounds is usually seen. In this project, our goal is to search the best growth condition by the traditional method by varying one growth parameter at a time and by the famous Taguchi methods which is based on the statistics and is proved in many systems a best way in studying the association between the film properties and the control factors.
First part of this project, we change one growth condition at a time and find the film quality related with the growth condition. Second, we use “Taguchi method” as bases to form a perpendicular table in which various growth conditions and levels are set. According the table, the number of experiments is limited down to nine. All of the films are examined by structure, electric and magnetic properties to formed the quality data base for films.
The traditional method concludes that the higher growth temperature, lower total chamber pressure and high partial pressure ratio of Ar and Oxygen are the corrected way approaching to the single phase, 214, films. However, the result from Taguchi method is contradict to the tradition method, in which the high growth temperature, high total chamber pressure, low partial pressure ratio of Ar and oxygen and the medium RF forward power can approach to growth the single 214 phase film. All films consists mix phases of higher n. This may imply that the growth window for LSMO 214 is relative narrow that we did not set our condition right in that opening.

摘 要
第一章 前 言……………………………………………1
第二章 理 論……………………………………………2
2-1 磁性物質…………………………………………….2
2-2 磁阻簡介…………………………………………….7
2-3 龐磁阻材料…………………………………………10
2-4超巨磁阻相關理論………………………………….14
2-4-1 雙交換機制模型(Double Exchange Model)..14
2-4-2 John - Teller Effect…………………………16
2-5 薄膜成長動力機制…………………………………17
第三章 實驗流程及量測原理……………………………...21
3-1 濺鍍系統儀器設備…………………………………21
3-2 靶材製作流程………………………………………23
3-3 薄膜實驗流程………………………………………30
3-4 薄膜物性分析………………………………………36
3-4-1 晶體結構分析（X-ray分析）……………………36

3-4-2晶體跟基板界面的成份分析（歐傑電子光譜儀，AES分析）………………………….36
3-4-3 晶體表面的形貌分析（原子力顯微鏡，AFM分析）……………………………………..36
3-4-4電性量測…………………………………...37
第四章 結果與討論……………………………………...38
4-1 薄膜結構分析……………………………………..39
4-2 薄膜電阻-溫度(R-T)量測分析…………………....52
4-3 薄膜之歐傑電子能譜儀(Auger Electron Microscopy；AES)之分析……………………………………………………….61
4-4 結論……………………………………………….67
4-5田口方式尋找最佳成長條件……………………...85
第五章 總 結…………………………………………100
參考資料……………………………………………………101

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