自組式半導體量子點現今已被廣泛的應用在光通訊上，由於量子點具有的三維侷限能力使其狀態密度呈現delta function，所以能抑制住聲子散射，故增強了量子點侷限激子效應的能力。因此利用量子點當作主動層來製作電致吸收調變器和光放大器較其它傳統材料要來的好。在我們的研究中，我們將說明我們整合串接式的電致吸收調變器與光放大器的目的，及用高速的串接式電極來降低電氣寄生，使得用量子點EAM能有很高速的載子逃脫速度。
　　量測證實元件的電致發光波長基態約為1200~1220 nm波段。而吸收波長在1200~1220nm波段，隨著外加逆偏壓的變大，其波長紅位移偏移量與外加逆偏壓呈二次關係，證實為量子局限史塔克效應(Q.C.S.E.)現象，而於10V偏壓下的紅位移量約20nm，以及頻寬變大的現象產生。量測波導長度為580μm之光波導傳輸系數可以得知元件的調變效果在10V偏壓下約1.6dB(量子點不均勻)，由於藉由高速的電子電路(串接式)使得頻寬響應對偏壓很敏感並利用多段式來提高元件的電光響應，因此在3dB頻寬可達30GHz。

　　Self-assembly semiconductor quantum dot (QD) has been widely used as optoelectronic applications due to its delta-function-like density of state, insensitive to photon scattering, the capability of mass production, greatly enhancing quantum confined and exciton effect.Therefore, device applications, such as, electroabsorption modulator(EAM) and semiconductor optical amplifier (SOA) can have benefits over the conventional types through such active region. In this work, a monolithic integration of cascaded EAM and SOA based on QD material is proposed and demonstrated. Through high-speed cascaded electrode design to eliminate electrical parasitics, high-speed of QD carrier escaping processing and thus electroabsorption modulation can thus be observed.
　　In the device characterization, electro luminescence (EL) is first used to examine the optical transition of QD, showing 1200-1220 nm for ground state. Using the EL spectrum measurement, the red shift of 20 nm in photocurrent peaks from 0V to 10V is observed. Also, the peaks exhibit a quadratic relation against with bias, confirming QCSE effect of QD. In the optical transmission measurement, 1260 nm light excites on a 580 μm long device, obtaining 1.6dB extinction(QD’s inhomogeneous) by voltage swing of 10V. By the high-speed electronic cascaded circuit(CI) such that the bandwidth response bias is very sensitive and the use of multi-stage to increase E-O response, leading to 3dB bandwidth of higher than 30GHz.

論文授權書........................................Ⅰ
中文審定書........................................Ⅱ
英文審定書........................................Ⅲ
致謝...................................................Ⅳ
中文摘要............................................Ⅴ
英文摘要............................................Ⅵ
目錄...................................................Ⅶ
圖次...................................................Ⅹ
第一章 序論......................................1
1-1 前言..........................................1
1-2 量子結構的發展.........................1
1-3 量子點及製程方法......................2
1-4 電致吸收光調變器與半導體光放大器之特性優點....7
1-5 研究動機....................................7
1-6 論文架構...................................16
第二章 原理與文獻回顧...................18
2-1 量子點的量子效應.....................18
2-1-1 量子侷限效應(Quantum Confinement
Effect)…………….............................18
2-1-2 量子穿隧效應(Quantum Tunneling
Effect)…………….............................20
2-1-3 庫侖阻塞效應(Coulomb Blocked Effect).....21
2-2 電致吸收調變器(Electro-absorption Modulator)原理.....................................................21
2-2-1 載子躍遷................................23
2-2-2 量子侷限史塔克效應(QCSE)...24
2-2-3 激子(Exciton)對吸收的影響...25
2-2-4 載子填滿效應(Carrier Filling Effect)…….28
2-2-5 載子逃脫機制(Carrier Escape Mechanisms)...28
2-2-6 量子點的吸收調變與高速機制..................29
2-3 半導體光放大器(Semiconductor Optical
Amplifier).........................................31
2-3-1 增益飽和(Gain Saturation)與編碼相依(Pattern Effect)..............................................33
第三章 材料結構與元件製程.........39
3-1 元件材料結構...........................39
3-2 製程步驟..................................41
3-3 製程結果..................................63
第四章 量測結果..........................65
4-1 電壓-電流曲線(I-V Curve)........65
4-2 電激發光(Electron Luminescence)…..69
4-3 吸收頻譜(Photocurrent)與傳輸係數
(Transmission)…...........................72
4-4 微波反射(Microwave Reflection)與微波穿透(Microwave Transmission)................................77
4-5 電光響應(E-O Response)........80
第五章 結論.................................82
參考文獻........................................83

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