本實驗架設主要以摻鈦藍寶石雷射(Ti：Sapphire)與單光子技術系統(TCSPC)為主，對M面ZnO進行光致螢光光譜(PL)與時間解析螢光光譜(TRPL)的研究。
主要樣品有二：分別以原子層沉積法(ALD)與濺鍍法(Sputtering)在M面藍寶石基板(Sapphire)上成長M面的ZnO。藉著改變(1)溫度、(2)量測波長以及(3)激發光和螢光偏振方向與樣品C軸的夾角，來探討M面ZnO的光學特性。由ZnO的光致螢光光譜可在紫外光區看到近能帶的激子發光，且以濺鍍法成長的ZnO在可見光區有因氧空缺所產生的螢光，但原子層沉積法成長的ZnO卻看不到此區的螢光。由變溫光致螢光光譜可以得到其活化能的大小，再由活化能的大小可算出其施子(Donor)與受子(Acceptor)的束縛能(Binding energy)。改變螢光的偏振方向與樣品C軸的夾角時，當螢光偏振方向與樣品C軸垂直時，會發現其螢光強度會最強、螢光能量有微小的藍移。在時間解析螢光光譜實驗(TRPL)中，觀察到載子復合發光的生命週期，會隨著螢光波長的變長與溫度的降低而變長。

We use a Ti:Sapphire laser and a Time Correlated Single Photon Counting (TCS PC) system to study the photoluminescence(PL) spectral and time-resolved PL (TRPL) of the m-plane ZnO. The two samples: m-plane ZnO was grown on m-plane Sapphire substrate by Atomic Layer Deposition(ALD) and Sputtering, respectively.
We observed the optical properties by changing the temperature, the wavelength and the polarization of PL. The ZnO have a exciton emission at the UV zone from the PL spectral,and the sample grown by sputtering has a PL at the visible light zone from oxygen-vacancy. We can know the active energy from temperature-dependence PL, and then the donor and acceptor binding energy would be known from active energy.
We found the PL intensity would become stronger as the polarization of laser was perpendicular to c-axis of sample. The lifetime would become longer as the longer wavelength and the lower temperature from TRPL.

論文審書…………………………………........................................................................i
誌謝………………………………………………...........................................................ii
中文摘要……………………………………….….........................................................iii
英文摘要……………………..……………………........................................................iv
圖次.................................................................................................................................vii
表次................................................................................................................................xvi
第 一 章 導論...............................................................................................................1
1.1前言……………………………………………….............................................1
1.2 ZnO的基本性質……………………………………………….........................2
1.3 ZnO的發光機制……………………………………………….........................4
1.4 Polar ZnO與non-polar ZnO差異性比較……………………...........................5
1.5 ZnO 相關文獻探討……………………………………………........................7
1.6 研究動機…………………………………………..........................................10
第 二 章 基本原理介紹.............................................................................................13
2.1光致螢光光譜(PL)與時間解析螢光光譜(TRPL)....................………............13
2.2 導電帶載子非復合之能量釋放………………………………......................13
2.3 電子從導電帶掉回價電帶的釋放能量方式…………………......................15
2.4 ZnO的激子躍遷……………………………………………...........................17
第 三 章 實驗原理與光路架設.................................................................................19
3.1 Mai Tai Laser…………………………………………….................................19
3.2 TP-2000B Tripler原理……………………………………………..................20
3.3 TCSPC (Time-Correlated Single Photo Counting)系統簡介...........................22
3.4實驗光路架設……………………………………………...............................27
3.5 其他量測儀器原理簡介(XRD、ALD、Sputtering) …….................................28
第 四 章 實驗結果與討論.........................................................................................32
4.1 樣品介紹………………………………………..............................................32
4.1.1 m-plane ZnO………………………………………..............................32
4.1.2 X-ray 繞射結構圖…………………………………............................35
4.2 m-plane ZnO/m-plane Al2O3 by ALD (Sample 1) …………...........................36
4.2.1 PL分析…………………………………...............................................36
4.2.2 變溫PL…………………………………..............................................42
4.2.3 分別改變激發光及螢光與Sample 1 C軸夾角之變溫光致螢光光譜
的討論…………………………………...............................................56
4.2.4 Sample 1之時間解析螢光光譜…………………................................62
4.3 m-plane ZnO/m-plane Al2O3 by Sputtering (Sample 2) …...............................80
4.3.1 PL分析…………………………………...............................................80
4.3.2變溫PL……………………………………….......................................87
4.3.3分別改變激發光及螢光與Sample 2 C軸夾角之變溫光致螢光光譜
.............................................................................................................105
第 五 章 結論...........................................................................................................110
參考文獻......................................................................................................................113

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