本論文主要是在磷化銦的半導體光放大器之結構上設計和製作主動與被動積體化元件。研究內容包含脊狀雷射、量子井混合技術以及製作1x1和2x2光轉換器與環形共振腔結合多模光波導彎轉鏡面耦合器。我們發現當二個多模光波導交叉在自我成像位置時，有最小的擾動。利用有限時域差分法（FDTD）模擬獲得多模光波導以90 度或者60度交叉在中心位置都有最小的交錯損失。進而以對稱對摺原理，可在交叉位置形成全反射鏡面，造成入射光模彎轉進入交叉波導。實際上，為了達到內部全反射有一個Goos-Hanchen位移校正在這反射器上並且被一個平面所取代。
被動元件係利用發光波長為λ=1.41微米的晶片來製作1x1 60 度、1x1 90度、2x2 90度多模干涉垂直鏡面反射耦合器和環形共振腔結合2x2 90度多模干涉垂直鏡面反射耦合器之半導體光濾波器。(1)利用乾式蝕刻技術來製作在垂直鏡面產生全反射之深蝕刻，並且為了降低內部全反射鏡面損失我們加入Goos-Hanchen位移來校正這反射鏡，藉由垂直鏡面的設計及深蝕刻鏡面製作，使一入射至多模干涉耦合器的多模光波導轉彎，並在適當的改變多模干涉耦合器的長度，以達到所需要85：15的分光比。(2)在固定耦合器寬度之下垂直鏡面反射耦合器為傳統多模干涉耦合器之長度縮短33%，(3)應用這樣耦合器於環形共振腔之光濾波器之共振腔長縮短50％。(4)在元件的特性量測方面，2x2 90度模干涉垂直鏡面反射耦合器量測得到85:15的分光效果，並將這樣耦合器應用於環形共振腔之光濾波器可以得到自由空間的光譜範圍(FSR) 82 GHz的光譜圖。(5)這樣的單環共振器分別都被實現以磷化銦為基板，藉由分子束磊晶沉積法的砷化鎵銦/砷化鎵鋁銦材料及藉由有機金屬化學氣相沉積法的磷砷化鎵銦材料。
為將主動及被動元件積體整合在一個晶片上的需要，我們也發展了量子井混合技術。第一個方法是在λ=1.55微米的晶片，利用氬離子電漿轟擊後接著快速回火，在這製程過程後的樣品之光激螢光的強度比原來的樣品變強10倍以上並且有少量的15奈米藍移。第二個方法是使用λ=1.55微米的晶片，利用氬離子電漿轟擊跟隨濺鍍二氧化矽膜在晶片上接著快速回火，在這樣製程過程後樣品在磷砷化鎵銦材料得到90奈米藍移，並且得到多重量子井和上方覆蓋層之間的最佳距離是300奈米。另外，此方法在砷化鋁鎵銦材料得到60奈米藍移並且在轟擊後多重量子井和上方覆蓋層之間的最佳距離是200奈米。這些結果對於光子積體化的重新成長、可犧牲層的距離和積體整合製程都是非常有用。

In this thesis, ridge waveguide laser, quantum well intermixing, 1x1 and 2x2 optical switching and ring resonator with multimode-waveguide turning mirror couplers have been investigated. We develop a new design that the perturbation is the minimum when the crossing occurs at the self-image location in a low-loss multimode waveguide. We use a center-fold low-loss multimode waveguide with a single self image at the center. Such waveguides can cross at 90 degrees or 60 degrees at the center with minimal cross talk. One can reflect the incident mode into an intersecting waveguide by introducing an idea reflecting plane. In practice, the reflector is replaced by a plane for total internal reflection with correction for Goos-Hanchen shift.
Passive component forλ = 1.41 μm samples, 1x1 60-degree multimode-waveguide
turning mirror, 1x1 90-degree multimode-waveguide turning mirror, 2x2 90-degree
multimode-waveguide turning mirror and a single ring resonator with 2x2
multimode-waveguide turning mirror couplers have been fabricated. (1) The
multimode-waveguide turning mirror coupler with cross coupling factor (K) of 0.15 is
achieved by an etched facet with a correction for Goos-Hanchen shift. (2) The length of the
multimode-waveguide turning mirror coupler is only 33% of the length of conventional
straight 2x2 MMI coupler with K=0.15. (3) The circumference of the curve waveguide in this
ring resonator is decreased by 50%. (4) The characterization of the InP-based single ring
resonator incorporating 2x2 multimode-waveguide turning mirror couplers with K= 0.15 has
a free spectral range of 82 GHz, a contrast of 4 dB, and a full-width at half-maximum
(FWHM) of 0.24 nm for the drop port. (5) This single resonators in
In0.53Ga0.47As/In0.53Ga0.26Al0.21As grown by molecular beam epitaxy (MBE), and
In0.67Ga0.33As0.6P0.4/In0.71Ga0.29As0.74P0.26 grown by metal organic chemical vapor deposition
(MOCVD) have been demonstrated, respectively.
We have also developed quantum well intermixing technique for the photonic
integration. (1) Argon plasma bombardment followed by rapid thermal annealing for
InGaAs/InGaAlAs multiple-quantum-well structures grown by MBE has been found to
strongly enhance the intensity of room-temperature photoluminescence signal by more than
an order of magnitude. The strength of the photoluminescence signal is found to be dependent
on the plasma RF power and bombardment time. The resulting blue shift of the
photoluminescence wavelength due to quantum well intermixing is found to be under 15 nm.
(2) Process combining inductively-coupled-plasma reactive ion etching (ICP-RIE) and SiO2
sputtering film has been investigated for the InGaAsP and InGaAlAs multi-quantum wells
(MQWs). Optimal distance is of 300 nm for InGaAsP, and of 200-nm-thick for InGaAlAs
between MQWs and the upper cladding by ICP-RIE and bombardment. The process resulted
in a bandgap blue-shift of 90 nm for InGaAsP, and of 60 nm for InGaAlAs. The result is very
useful to regrown, the sacrificing layer and to integrate the fabrication.

I Introduction 1
1.1 Optical filters 1
1.2 Ring device applications 4
1.3 Motivation 5
1.4 Outline of the thesis 7
Reference 7

II Design of Multimode Waveguide Turning Mirror Couplers
--- Analysis, Simulation and Model 9
2.1 Introduction 9
2.2 Analysis of Coupled Ring Resonators with MMI couplers 10
2.2.1 The transfer functions of a symmetric directional coupler 11
2.2.2 The transfer functions of MMI couplers 13
2.2.3 Curved waveguide 16
2.2.4 Transfer functions for a double racetrack 19
2.2.5 Transfer functions for a triple racetrack 20
2.3 Simulation and Model 21
2.3.1 1x1 MMI waveguides of 4.4 μm-wide and 5 μm-wide model 21
2.3.2 90-degree MMI waveguide crossing and turning mirror model 23
2.3.3 60-degree MMI waveguide crossing and turning mirror model 24
2.3.4 2x2 multimode waveguide turning mirror couplers 25
Reference 32
III The Material System and Fabrication 35
3.1 The Material of InGaAlAs 35
3.1.1 The advantage of InGaAlAs 35
3.1.2 Compressively Strained QWs 37
3.1.3 N-type modulation doping 38
3.2 SOA’s QW 39
3.2.1 TE-polarized laser 39
3.2.2 p-i-n laser 41
3.3 The fabrication of ridge waveguide --- wet etching 46
3.3.1 Multi-step wet etch method 46
3.3.2 Multi-step Undercutting Process 49
3.3.3 Planarization and metal process 51
3.4 The fabrication of the waveguides ----dry etching 52
3.4.1 The curved waveguide 55
3.4.2 The process of the fabricated waveguide 59
3.5 Multimode interference turning mirror coupler 65
3.5.1 The fabrication of MMI waveguide crossing and turning mirror 65
3.6 Ring resonator with MMI turning mirrors 66
3.6.1 Single ring device with MMI turning mirrors in InGaAsP material 67
Reference 70


IV Experimental results and Discussion 72
4.1 PL and EL measurement 72
4.2 Active devices 73
4.3 Passive devices 74
4.3.1 Curved waveguides loss 74
4.3.2 1x1 MMI waveguides of 4.4 μm-wide and 5 μm-wide pattern 79
4.3.3 90-degree MMI waveguide crossing and turning mirror pattern 80
4.3.4 60-degree MMI waveguide crossing and turning mirror pattern 81
4.3.5 2x2 90-degree MMI waveguide turning mirror pattern 82
4.3.6 Experimental results with single ring device in InGaAs material 83
4.3.7 Experimental results with single ring device in InGaAsP material 84
Reference 87

V Summary 88


APPENDIX - A
Quantum Well Intermixing Technique 92
A.1 Introduction 92
A.2 Argon plasma induced photoluminescence enhancement 95
A.2.1 Experimental Results 96
A.3 Argon Plasma Bombardment and SiO2 Sputtering Deposition 99
A.2.1 Experimental results 101
Reference 110

Publication List 112


List of Tables

TABLE 2.1 The layer sequence of the devices 21
TABLE 2.2 MMI lengths for three split ratios, w=2.2

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