本論文是利用Time-Correlated Single Photon Counting (TCSPC)的實驗方法來研究氮化銦鎵多從量子井發光二極體時間解析下的螢光光譜，以及利用光激發螢光光譜來分析硒化鎂鋅薄膜Zn1-xMgxSe的特性。氮化銦鎵多從量子井的銦摻雜濃度為25%，是綠光波段的發光二極體。實驗結果可以得到其活化能大小109.89eV、11.36eV，並發現載子結合釋放的PL生命期，會隨螢光的波長變長以及溫度降低而變長。利用內部量子效率(IQE)及輻射結合的關係式，得到發光輻射結合生命期在高溫與溫度的3/2次方成正比，與其他實驗果相同，並且得知臨界溫度約180K。硒化鎂鋅薄膜的鎂成分分別為10%、25%、34%、37%、40%、42%，由實驗結果可以發現鎂成分最小的樣品，在光學特性上的變化趨勢與其他的濃度變化不連續，可能是因為硒化鎂鋅會在小濃度有不同的結構。

This thesis used TCSPC (Time-Correlated Single Photon Counting) apparatus to study the time-resolve photoluminescence (TRPL) of InGaN multi-quantum-well light emission diode and the photoluminescence of Zn1-xMgxSe properties at different Mg concentration. We obtained the activation energy form Arrhenius Plot, internal quantum efficiency (IQE), the radiative lifetime, and the radiative recombination critical at 180K of In0.25Ga0.75N multi-quantum well LED. Furthermore, the variation of PL peak location and FWHM with Mg concentration of Zn1-xMgxSe thin film with x=0.1、0.25、0.34、0.37、0.4、0.42 are observed.

致 謝 i
摘 要 ii
Abstract iii
目 錄 iv
圖 次 vi
表 次 ix
第一章 導論 1
1.1 LED的發展歷史 1
1.2 InGaN/GaN量子井結構的發光二極體 5
1.3 LED的內部量子效率 7
1.4 Ⅱ-Ⅵ族的半導體 ZnMgSe 8
第二章 基本的原理介紹 14
2.1 載子的結合(carrier recombination) 14
2.2 載子結合率(recombination rate) 15
2.3 螢光強度和發光、非發光輻射結合生命期 20
2.4 隨溫度變化的發光、非發光輻射結合生命期 22
2.5 低溫下的發光輻射結合(radiative recombination) 23
第三章 樣品介紹 26
3.1 InGaN / GaN MQW LED 26
3.2 ZnMgSe薄膜 28
第四章 實驗的原理與光路架設 34
4.1 PicoHarp300儀器的原理簡介 34
4.2 雷射裝置 40
4.3其他量測儀器原理介紹 (XRD、SEM、EDS) 43
4.4 實驗的光路架設 46
第五章 實驗結果與討論 49
5.1 InGaN/GaN MQW發光二極體 49
5.2 Zn1-xMgxSe 薄膜 67
第六章 結論 72
Reference 74

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