發光元件發展的突飛猛進，發光二極體(Light emitting diode, LED)是目前發光元件中最具潛力之一的產品，在近幾年之中，由於發光效率的提升以及產品尺寸的縮小而應用在面顯示器上有顯著的影響，所帶來的市場價值頗大，故關於此元件方面的技術則備受重視，我們所實驗的目的之一即為快速且精確地檢測此類元件並得知其元件特性，以及達到非破壞性的檢測並且改良元件的缺陷。通常檢測此類元件的技術，以光致電流顯微技術和光致螢光顯微技術最被廣泛使用，我們即利用這兩項技術得知元件中載子特性。首先，我們利用脈衝雷射、掃描系統以及TCSPC將所得到的光致螢光結果做時間解析的分析，並且在樣品上外加不同的逆向偏壓，另一方面，同時收取光致電流訊號，其訊號通過前置放大器增強訊號之後，最後輸入於電腦處理成光致電流影像。我們只控制不同的逆向偏壓，其餘皆未改變下，發現時間解析光致螢光強度隨著逆向偏壓的增加而衰減，以及主動層內部之再度復合載子的復合時間縮短的現象，當我們測量衰減曲線時，是以兩個指數函數加上背景值測定，故最後得到兩種不同的載子復合時間(長復合時間載子時間與短復合載子時間)，有趣的是，雖然兩種載子的復合時間接有所縮短，但載子數衰減的過程中，長復合時間的載子數會逐漸低於短復合時間的載子數，而使主宰整體的復合時間之載子有所變化，也就是說，我們發現其元件會因主導整體的載子改變而使元件的發光時間有所極限。另一方面，光致電流的結果與光致螢光的結果呈現了一種關聯，意即當逆向偏壓的增加，其兩種強度的變化為負相關在這裡，說明了逆向偏壓對於多重量子井所造成的影響，且與理論也符合。我們利用這兩種技術成功地直接觀察載子在元件中的動力學，這對於改良此類元件的特性是非常有幫助。

With rapid development of light emitting device, the detection techniques of semiconductor are more and more important, which include time-resolved photoluminescence (TRPL) and optical beam induced current (OBIC) microscopy. In this thesis, we realize the carrier behaviors of active region with multiple quantum wells (MQWs) by these microscopies, and the samples are light emitting diodes (LEDs). However, PL intensity of LEDs increase but OBIC not due to external field compensates, on the other hand, reducing PL lifetime indicates the response time of device shorter with higher reverse bias.

目 錄
誌 謝 ........................................................................................................................ i
中文摘要 ...................................................................................................................... iii
Abstract ......................................................................................................................... iv
目 錄 ....................................................................................................................... v
圖 次 ..................................................................................................................... vii
表 次 ...................................................................................................................... ix
第一章 導論 ................................................................................................................. 1
第二章 工作原理 ......................................................................................................... 3
2.1 光致電流 ........................................................................................................ 3
2.2 光致螢光 ........................................................................................................ 3
2.3 多重量子井 .................................................................................................... 4
2.4 逆向偏壓對於發光二極體的影響 ................................................................ 5
2.5 時間相關單光子計數 .................................................................................... 6
2.7 時間解析光致螢光 ........................................................................................ 8
2.8 雙光子激發效應 ............................................................................................ 8
第三章 實驗架設 ....................................................................................................... 10
3.1 樣品介紹 ...................................................................................................... 10
3.2 時間解析光致螢光實驗架設 ...................................................................... 11
3.3 光致電流實驗架設 ...................................................................................... 12
3.4 實驗架設說明 .............................................................................................. 13
第四章 結果與數據分析 ........................................................................................... 14
4.1 簡介 .............................................................................................................. 14
4.1.1 時間解析光致螢光影像 ................................................................... 14
4.1.2 光致電流影像 ................................................................................... 14
4.2 發光二極體 .................................................................................................. 14
4.2.1 時間解析光致螢光測量 ................................................................... 14
4.2.2 時間解析光致螢光數據分析 ........................................................... 24
4.2.3 光致電流影像 ................................................................................... 26
4.2.4 光致電流數據分析 ........................................................................... 29
第五章 結論 ............................................................................................................... 32
5.1 發光二極體 .................................................................................................. 32
參考文獻 ..................................................................................................................... 33
附錄 A 光量子環雷射二極體 ................................................................................... 36
A.1 摘要 ............................................................................................................. 36
A.2 光量子環雷射二極體 ................................................................................. 36
A.3 實驗架設 ..................................................................................................... 37
A.3.1 光量子環雷射二極體 ...................................................................... 37
A.3.2 光致電流實驗架設 .......................................................................... 39
A.4 實驗結果與分析 ......................................................................................... 40
A.4.1 實驗簡介 .......................................................................................... 40
A.4.2 光致電流影像 .................................................................................. 40
A.4.3 光致電流數據分析 .......................................................................... 42
A.5 結論 ............................................................................................................. 45
A.6 參考文獻 ..................................................................................................... 45

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