本論文利用分子束磊晶系統成長m面氮化鎵於藍寶石基板上，並由有機金屬化學氣相沉積法成長m面氮化鎵模板，再由分子束磊晶系統及氣動閥控制技術試著成長摻錳的m面氮化鎵薄膜；在各項實驗中我們調整不同的成長溫度及分子束流量之比例試圖提升薄膜品質，以及使錳摻入氮化鎵薄膜中。
量測方面則藉由x光繞射觀察薄膜之結構及品質，電子顯微技術觀察表面、厚度及元素含量之分析，再由拉曼光譜分析錳是否有成功的摻入氮化鎵薄膜中。

In this research, we grow m-plane gallium nitride on sapphire substrate using molecular beam epitaxy system, then using metal-organic chemical vapor deposition (MOCVD) to grow a thick layer of m-plane gallium nitride as a template. On the top layer we use molecular beam epitaxy (MBE) with shutter control to grow GaN:Mn thin film. With the characterizations from Raman spectroscopy, x-ray diffraction, electron microscopy, a comprehensive understanding of the materials will be obtained in terms of structural and optical properties.

論文審定書 i
摘要 ii
Abstract iii
目錄 iv
圖目錄 vi
表目錄 x
第一章 序論 1
1.1 介紹 1
1.2 文獻回顧 2
第二章 儀器介紹 5
2.1分子束磊晶系統 (Plasma assisted molecular beam epitaxy, PAMBE) 5
2.2 場發射掃描式電子顯微鏡 (Field emission scanning electron microscopy, SEM) 6
2.3 能量散佈X光光譜學 (Energy dispersive x-ray spectroscopy, EDS) 8
2.4 高解析X光繞射 (High-resolution x-ray diffraction, HRXRD) 9
2.5 拉曼光譜學 (Raman spectroscopy) 10
2.6 光致螢光 (Photoluminscence) 11
第三章 實驗 12
3.1 在m面藍寶石(sapphire)基板上成長m面氮化鎵(GaN) 12
3.1.1 成長過程及參數 12
3.1.2 掃描式電子顯微鏡影像 14
3.1.2 高解析X光繞射光譜 17
3.2 利用有機金屬化學氣相沉積法(Metal-organic chemical vapor deposition, MOCVD)在m-GaN上成長m-GaN 23
3.2.1 成長參數 23
3.2.2掃描式電子顯微鏡影像 24
3.2.3高解析X光繞射光譜 26
3.2.4拉曼散射光譜 (Raman scattering spectra) 30
3.2.5 光致螢光 34
3.3 在m-GaN模板上成長m-GaN:Mn 36
3.3.1成長過程及參數 36
3.3.2掃描式電子顯微鏡影像 38
3.3.3高解析X光繞射光譜 43
3.3.4能量散佈X光光譜學 50
3.3.5 拉曼散射光譜 53
第四章 結論 58
參考資料 59
附錄一 63

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