表面物理現在已經是一個成熟的領域。綜觀表面物理的過去發展，其發展不只和新的研究工具發明也與新的材料發現有關。這裡我們試著利用具有原子解析度的工具來理解新的材料其物理和化學性質。在這個論文的第一個部份，我們利用掃描式穿隧顯微鏡和能譜來研究能量高於功函數的量子化空軌域。藉由Bohr-Sommerfeld量子化方法，在石墨稀裡的量子化空軌域能階可以被判別。藉由量測這個量子化空軌域能階，石墨稀的厚度也可以被分辨。其空間解析可以到達一個奈米左右。論文的第二部份討論了銦原子在Si(111)-α-√3-Au上的二維結構。第三部份討論了在氮化鎵(1-100)面上水的解離反應。利用光電子能譜配合其他對表面敏銳的工具，我們試著建構水在表面上解離的原子模型。

The progress of the surface science is driven by the new tools and also the novel condense materials. The aim of this thesis relative to both of them especially in atomic details. For the first part of the thesis, STM/STS was used to probed the quantized unoccupied states above the vacuum level. By using the Bohr-Sommerfeld quantization, the quantized unoccupied σ states in epitaxial graphene layers were quantitatively identified. These quantized unoccupied states are strongly layer dependent and can be used to identify the absolute number of graphene layers with sub-nanometered resolution. Second part of the thesis is the study of novel 2D structure: √7×√3 In on Si(111)-α-√3-Au. α-√3-Au overlayer on Si(111) is one of the famous two-dimensional electron gas system. Here, an ordered In surface structure with 0.8 ML In coverage was found to be stable on Si(111)-α-√3-Au. Detailed atomic model of this In surface structure was studied by STM/STS, LEED and further comparing with that proposed by the density functional theory. The last work is the atomic structure of H2O molecules on cleaved GaN(1-100) surface. From the theoretical calculations, the H2O molecules was expected to dissociated spontaneously simply by the thermal energy on the non-polar GaN(1-100) surface. Here, the structure and the chemical information of H2O molecules on the cleaved GaN(1-100) surface is studied by STM/STS, LEED and time-dependent XPS. Detailed atomic model was built and compared with that from the calculations.

[論 文 審 定 書+i]
[acknowledgements+iii]
[中 文 摘 要+iv]
[abstract+v]
[introduction+1]
[Theory and Experimental setup+7]
[STM theory+7]
[STS+9]
[Normalization for dI/dV spectra+10]
[Field emission spectrum+12]
[Low temperature UHV STM system+12]
[Sample preparation+14]
[Si(111)+14]
[graphene/6H-SiC(0001)+16]
[cleavage nonpolar GaN(1-100)+16]
[X-ray photoelectron spectroscopy+22]
[UHV system for XPS measurement+27]
[XPS parameter+28]
[Probing the Quantized unoccupied states by field emission spectroscopy+29]
[Tight binding model for grpahene layers+29]
[Bohr Sommerfeld model of Field Emission Resonance+32]
[Resonance Spectra of Epitaxial Graphene on 6H-SiC(0001)+34]
[Suppression of the resonant electron waves+36]
[Field emission images+38]
[Determing the structure of novel 2D structure - 0.8 ML indium on Si(111)-α-√3×√3-Au+43]
[sample preparation+43]
[5×2-Au and α-√3×√3-Au on Si(111)+43]
[Indium on Si(111)-α-√3×√3-Au+45]
[√7×√3 indium structure on Si(111)-α-√3×√3-Au+47]
[0.8 ML coverage of the In surface structure+49]
[Atomic model of the In surface structure on Si(111)-α-√3×√3-Au+50]
[Identifying the H2O dissociation on Cleaved GaN(1-100) surface+59]
[Crystalline property of cleaved GaN(1-100)+59]
[Morphology of the clean GaN(1-100) surface+59]
[1/3 ML and 1 ML surfaces+61]
[Invisible H2O/D2O on cleaved GaN(1-100) surface+64]
[Missing N dangling bond states by depositing H2O+67]
[H2O structure on GaN(1¯100) studied by LEED+69]
[Chemical results+71]
[Cleaved GaN(1-100) surface in UHV, O2, H2O environments+71]
[Photon-induced reaction+73]
[Heating effect+75]
[Identify XPS features+80]
[Coverage estimation+88]
[H2O and O2 on GaN(0001)+92]
[DFT proposed models+94]
[Discussion+97]
[Fermi level pinning and unpinning on the cleaved GaN(1-100) surface+97]
[Experiments proposed H2O atomic model on GaN(1-100)+105]
[Summary and outlook+111]
[Bibliography+115]

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