自古以來，自然界即為人類各種技術、工程原理及重大發明的思想泉源，隨著生產的需要和科學技術發展，仿生科技在近年來備受矚目。本論文製備鋰鋁氧薄膜電阻式記憶體元件，其具有優良的多位元(Multi-Bite)存取功能，能仿效大腦記憶突觸的運作方式，有助於未來類神經網路的發展。
本論文使用多靶式磁控濺鍍機，製作絕緣層分別為鋰鋁氧及氧化鋁薄膜電阻式記憶體，上下電極為鉑與氮化鈦。從I-V電性，發現此鋰鋁氧元件為鋰阻絲進行阻態切換。高電阻阻態(HRS)之阻態變化能從10-4~10-7 Ω的阻值分布。在Reset過程中常出現兩階段Reset現象，此行為可藉由離子的擴散與氮化鈦吸引鋰離子模型解釋廣域電阻值與利用氧離子對鋰阻絲的氧化還原解釋兩階段Reset。
隨後在氮化鈦上濺鍍鉑電極，藉以阻止鋰離子擴散至氮化鈦電極中，發現HRS的分布降至一個Order，消除了廣域電阻分布現象。但低電阻阻態分布卻比無鉑之氮化鈦上電極時較廣，此係由於鉑電極阻擋氧離子與鋰離子擴散至電極裡，氧離子使鋰阻絲氧化而致LRS不穩定現象。
利用DC電壓與Pulse電壓操作皆可使鋰鋁氧電阻式記憶體產生連續阻態變化，在氧化鋁RRAM則無此現象。再者利用Pulse電壓可使鋰鋁氧電阻式記憶體產生出仿生物腦神經記憶之行為-尖峰時間相關之可塑性(Spike-Timing Dependent Plasticity, STDP)，此為生物上大腦記憶中最重要的特性之一。利用DC電壓產生的連續阻態變化，配合電性擬合機制找出Ohmic區段，分析其電阻與掃描次數之關係，建立出Multi-Filament模型解釋其電性之Multi-Reset機制。

Since long time ago, the nature being has been the source of human’s senses of invention principles productions, in which bionic technology has been well developed in recent years. Lithium aluminum oxide (LiAlO) thin film Resistance Random Access memory (RRAM) reveals an excellent multi-bites memory. It is considered for application of artificial neural network and analog storage to emulating memory rules in the brain.
In this thesis, two different RRAMs, investigated are that in one the insulation layer is lithium aluminum oxide, and the other one is aluminum oxide, fabricated by Multi-target magnetron sputtering. The RRAM upper and lower electrodes are platinum and titanium nitride, respectively. In operating process of this LiAlO RRAM the reset process reveals two reset stages. Applying the ionic diffusion and the titanium nitride attraction an ion model of lithium-ion, is discussed about the phenomenon of the two-phase wide resistance value. And utilizing oxygen ions model the two-stage redox Reset resistance of lithium wires are explained.
The experiment using sputtering platinum on the titanium nitride electrodes can prevent lithium ions diffusing into the TiN electrode, that HRS distribution is reduced to one Order. However, the distribution of LRS on titanium nitride becomes wider than that one without Pt layer on titanium nitride electrode. Since the Pt electrode blocks oxygen ions and lithium ions diffusing into the titanium nitride electrode, causes preventing of the instability of LRS.

Both DC and Pulse Voltage have been applied to perform lithium aluminum oxide RRAM, and reveal the HRS resistance changing continuously, but alumina RRAM does not. Applied with Pulse voltage on lithium aluminum oxide RRAM can induce a bionic brain behavior of Spike-Timing-Dependent Plasticity (STDP), which is one of the most important characteristics of biological brain and memories. the LRS of LiAlO RRAM changes gradually after applying a continuous DC voltage. From the fitting of their I-V curves the conductive mechanism is identified. From its resistance of Ohmic conduction region changes after numbers of I-V scans, a Multi-filament model is proposed to explain the Multi-Reset electrical mechanism.

[ 致謝 + i ]
[ 中文摘要 + ii ]
[ Abstract + iii ]
[ 目錄 + v ]
[ 圖目錄 + viii ]
[ 表目錄 + x ]
[ 縮寫對照 + xi ]
[ 第一章、概論 + 1 ]
[ 1-1前言 + 1 ]
[ 1-2研究目的與動機 + 2 ]
[ 第二章、文獻回顧 + 3 ]
[ 2-1 揮發式記憶體 + 3 ]
[ 2-2非揮發式記憶體 + 3 ]
[ 2-3 電阻式記憶體 + 4 ]
[ 2-2-1 電阻式記憶體阻絲理論 + 4 ]
[ 2-2-2 電阻式記憶體切換機制 + 6 ]
[ 2-3 絕緣體載子傳導機制 + 8 ]
[ 2-3-1歐姆傳導(Ohmic Conduction) + 9 ]
[ 2-3-2蕭基發射(Schottky Emission) + 10 ]
[ 2-3-3法蘭克-普爾發射(Frenkel- Poole Emission) + 11 ]
[ 2-3-4跳躍傳導(Hopping Conduction) + 12 ]
[ 2-3-5穿隧傳導(Tunneling) + 13 ]
[ 2-3-5空間電荷電流傳導(Space Charge) + 14 ]
[ 2-3生物之大腦記憶神經系統 + 15 ]
[ 2-3-1 記憶神經元(Neurons) + 15 ]
[ 2-3-2突觸(Synapse) + 16 ]
[ 2-4-3尖峰時間依賴可塑性(Spike-Timing-Dependent Plasticity, STDP) + 17 ]
[ 2-4-5人類大腦記憶模型(Memory Model) + 18 ]
[ 2-4-6長期增益效應(Long-Term Potentiation, LTP) + 19 ]
[ 第三章、鋰鋁氧電阻式記憶體製作與量測 + 20 ]
[ 3-1 鋰鋁氧電阻式記憶體製作流程 + 20 ]
[ 3-1-1鋰鋁氧薄膜RRAM元件備製 + 20 ]
[ 3-1-2Pt電極薄膜製備 + 22 ]
[ 3-1 鋰鋁氧材料分析 + 23 ]
[ 3-2-1 Far-FTIR 分析結果 + 23 ]
[ 3-2-2 XPS分析結果 + 24 ]
[ 3-3 鋰鋁氧 RRAM元件電性分析 + 25 ]
[ 3-3-1 Forming 過程 + 25 ]
[ 3-3-2 Reset與Set 步驟 + 26 ]
[ 3-3-3 鋰鋁氧 RRAM 元件之Size Effect量測 + 27 ]
[ 3-3-4 鋰鋁氧RRAM阻絲成分實驗 + 29 ]
[ 3-3-5 鋰鋁氧RRAM IV Sweep 與記憶保存力測試(Retention) + 30 ]
[ 3-3-6鋰鋁氧RRAM電流機制擬合 + 32 ]
[ 3-4 鋰鋁氧傳導機制模型 + 36 ]
[ 第四章、惰性電極及對鋰鋁氧電阻式記憶體之影響 + 37 ]
[ 4-1 TiN上加鍍鉑金屬電極之鋰鋁氧RRAM製備 + 37 ]
[ 4-2 Pt-RRAM元件電性分析 + 39 ]
[ 4-2-1 Forming 步驟 + 39 ]
[ 4-2-2 Pt-LiAlO RRAM IV Sweep 與電流機制擬合 + 40 ]
[ 4-3鋰鋁氧RRAM與Pt-LiAlO RRAM電性與機制模型比較 + 43 ]
[ 4-3-1 HRS電性與機制比較 + 43 ]
[ 4-3-2 LRS電性與機制比較 + 45 ]
[ 第五章、鋰鋁氧電阻式記憶體之仿生特性與應用 + 47 ]
[ 5-1 DC固定停止電壓連續操作 + 47 ]
[ 5-1-1 DC固定負停止電壓連續操作 + 47 ]
[ 5-2-2 DC固定正截止電壓連續操作 + 48 ]
[ 5-2 Fast IV 系統操作 + 49 ]
[ 5-2-1 Fast IV Pulse Set、Pulse Reset 連續操作 + 49 ]
[ 5-2-2 RRAM之尖峰時間依賴可塑性(Spike-Timing-Dependent Plasticity, STDP) + 51 ]
[ 5-3 多阻絲模型 + 54 ]
[ 5-3-1 DC固定停止電壓Reset過程 + 54 ]
[ 第六章、結論 + 62 ]
[ 參考文獻 + 63 ]
[ 附錄A 電阻式記憶體仿造長期記憶特性 + 67 ]
[ 附錄B 氧化鋁與鋰鋁氧RRAM特性比較 + 69 ]

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