本文將討論以電漿輔助分子束磊晶(plasma-assisted molecular beam epitaxy, PAMBE)在藍寶石(0001)基板上成長高品質氮化銦(InN)薄膜。在成長方面，我們使用雙層結構成長方式以降低晶格不匹配來達到高品質氮化銦，本實驗中有兩系列樣品，A系列為使用低溫氮化鎵當緩衝層，系列B使用高溫氮化鋁當緩衝層。利用不同材料的緩衝層來控制成長在上層的氮化銦薄膜樣品，並比較之。在成長的同時，藉由反射式高能量電子繞射系統(RHEED)做及時觀測以瞭解樣品成長時的狀況以及變化，來加以判別決定如何改變其生長時的參數，並利用原子力顯微鏡(AFM)、X光繞射(X-ray diffraction)、van der Pauw霍爾量測法、光致螢光光譜(PL)等一些量測工具來分析樣品表面的平坦度、晶格特性、薄膜內部結構品質、傳輸特性和發光特性。
在A系列與B系列隨著成長溫度的改變，我們發現A系列樣品擁有較佳的特性，如InN(0002)搖擺曲線的FWHM為343 arcsec， InN(10-12)接近1000 arcsec左右，以及載子遷移速度接近1000 cm2/Vs，且載子濃度也下探3x18 cm-3左右。

In this thesis, we study high quality InN films grown on sapphire (0001) by plasma-assisted molecular beam epitaxy (PAMBE). We used double layers methods to reduce lattice mismatch successfully. In this experiment, we have two series of samples, about series of A use low temperature GaN (LT-GaN) as the buffer layer as compared with series of B use high temperature AlN (HT-AlN) as the buffer layer. By in situ reflection high-energy electron diffraction (RHEED), we got film’s surface situation. Surface morphology of the samples was observed by atomic force microscope (AFM). By high resolution X-ray diffraction (HR-XRD) methods was analyzed quality and composition of InN films. Van der Pauw method (Hall) was used to determine carrier concentration and mobility. The optical properties of InN films under different growth conditions were investigated by photoluminescence (PL).
By changing growth temperature of these samples, we found the series of A having some fine characters as the InN(0002) rocking curve was 343 arcsec and InN(10-12) rocking curve was nearly 1000 arcsec. The mobility and carrier density of these samples were approximately 1000 cm2/Vs and 3 x 1018 cm-3 by Van der Pauw method.

目錄
第一章 簡介……………………………………………1
第二章 MBE系統與樣品簡介…………………………2
2.1 分子束磊晶系統………………………………2
2.2 基板選擇………………………………………5
2.3 樣品的製備與磊晶程序………………………5
第三章 儀器原理介紹………………………………10
3.1 原子力顯微鏡(AFM)…………………………10
3.2 X光繞射儀(XRD)………………………………12
3.3 X光微區分析(EPMA)…………………………16
3.4 霍爾量測(Hall)…………………………… 17
3.5 光致螢光光譜(PL)………………………… 20
第四章 實驗結果分析……………………………… 23
4.1 電子顯微鏡分析(SEM)………………………23
4.2 原子力顯微鏡分析(AFM)……………………23
4.3 X光繞射分析(XRD)………………………… 28
4.4 反射式高能電子繞射圖(RHEED)……………33
4.5 穿透式電子顯微鏡分析(TEM)………………36
4.6 霍爾量測分析(Hall)……………………… 37
4.7 EPMA分析…………………………………… 39
4.8 KOH蝕刻分析…………………………………42
4.9 光致螢光光譜分析(PL)…………………… 48
第五章 結論………………………………………… 70
參考資料…………………………………………………72
附錄 A……………………………………………………74

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