近年來，隨著生物資訊分析技術在血液學、生物化學與微生物學等領域的快速發展，已使得隨身檢測之分析系統需求日益重要。本論文致力於研發可拋棄式氫離子與鉀離子感測器微系統研發。此微系統所量測之離子濃度數據可提供民眾於日常生活作自我快速檢測以及醫療人員在照顧病患時重要的參考資訊。
利用現有IC或微機電技術製造隨身檢測之分析系統，具有下列幾項優點：微小化、反應時間短、可微量檢測、低功率消耗以及低成本。因此本論文使用延伸式閘極場效電晶體來製作離子感測器，為了能檢測多重離子，將數個電晶體製作於同一晶片中，並於電晶體閘極感測層上沉積與塗佈離子感測膜，使多種離子量測結果能同時顯現。本論文中的離子感測器，其主要製程步驟包含四道黃光微影與三層薄膜。根據實驗結果，氫離子感測器靈敏度為30.7 mV/decade，氫離子感測器感應範圍為pH值1~13。鉀離子感測器靈敏度為11.5 mV/decade，鉀離子感測器感應範圍為10-1~10-3M。

In recent years, as biological information analysis technology rapidly develops in hematology, biochemistry and microbiology areas, demand for portable measurement systems become more and more important. This study makes efforts in developing disposable hydrogen and potassium ion sensor and microsystem for analysis application. The measured ion concentration data by this analysis microsystem provide people a judgement on their health condition, and furthermore an important reference for medical treatment for patients.
There are several advantages in using IC or MEMS technology to manufacture portable measurement system, the advantages are down-scaling, short reaction time, trace chemical analysis, low power dissipation, and low cost. So the thesis uses extended gate field effect transistor, in order to measure multiple ions at the same time, multiple transistors are manufactured on the same chip with an ion selective membrane on top of the gate sensitive layer. This allows the measurement result of the multiple ion be shown at the same time. The main processing steps of the ion sensor developed in this study involve at least four photolithographic and three thin-film deposition processes.
Based on the measurement result, the hydrogen ion sensor’s sensitivity is 30.7 mV/decade for a sensing range pH1 ~ pH13. The sensitivity of the potassium ion sensor is 11.5 mV/decade for a sensing range 10-1M to 10-3M.

目錄
摘要.............................................................................................................I
Abstract......................................................................................................II
誌謝..........................................................................................................III
目錄..........................................................................................................IV
圖目錄......................................................................................................VI
表目錄......................................................................................................IX
第一章 緒論..............................................................................................1
1-1 前言..............................................................................................1
1-2 研究動機......................................................................................3
第二章 延伸式閘極場效電晶體與感測膜之理論分析..........................4
2-1 離子感測器之種類......................................................................4
2-1-1 離子選擇電極....................................................................4
2-1-2 離子感測場效電晶體........................................................5
2-2 離子吸附之理論與模型..............................................................7
2-3 延伸式閘極場效電晶體之介紹................................................10
2-4 氫離子感測器之原理介紹........................................................11
第三章 元件設計與製作流程................................................................14
3-1 延伸式閘極場效電晶體元件之設計與製作............................14
3-1-1 延伸式閘極場效電晶體之光罩設計..............................14
3-1-2 製作流程..........................................................................16
3-1-3 製程步驟與參數..............................................................18
3-2 氫離子感測層之沉積................................................................24
3-3 鉀離子感測層之備製................................................................26
3-4 元件封裝....................................................................................28
第四章 結果與討論................................................................................30
4-1 實驗所遭遇之問題....................................................................30
4-1-1 金電極對矽基板之影響..................................................30
4-1-2 五氧化二鉭蝕刻之影響..................................................34
4-2 延伸式閘極場校電晶體之分析................................................36
4-2-1 離子佈植對電晶體之影響分析......................................36
4-2-2 元件設計對電晶體之影響分析......................................39
4-3 氫離子感測器之分析................................................................43
4-4 鉀離子感測器之分析................................................................47
第五章 結果與未來展望........................................................................54
5-1 結論............................................................................................54
5-2 未來展望....................................................................................55
參考文獻..................................................................................................56
附錄..........................................................................................................59

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