Title page for etd-0506116-162238


[Back to Results | New Search]

URN etd-0506116-162238
Author Wei-Chi Sung
Author's Email Address phyvic104@gmail.com
Statistics This thesis had been viewed 5190 times. Download 0 times.
Department Physics
Year 2017
Semester 1
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title Effects of thermo-diffusion in TiO2 /MgO superlattices
Date of Defense 2016-07-20
Page Count 60
Keyword
  • MgO
  • annealing
  • interdiffusion
  • TiO2
  • superlattice
  • Abstract The MgO (Magnesium oxide) thin films start diffusing to the sapphire substrate at 473K. We investigate diffusion relation between the MgO and TiO2 superlattice structure and expect to find the best growing temperature and time for heteroepitaxy. By growing at different orientation Sapphire and sputtering power, we found the best growing condition for the single layer. We choose the XRR (X-ray reflectivity) signals as the mean tool to investigate the thickness, density, and roughness of the superlattice films. Comparing to other tools, such as TEM (Transmission electron microscopy), SEM(Scanning electron microscope) or AFM (Atomic force microscopy), that is much bigger scan region, better average signal receives and its resolution is coming to angstrom level. On the other hand, XRR technical was applied to metal superlattice and analysis science 1980, which had will define theory and fitting data. It is well-developed skill and suitable technic to apply to oxide superlattice. From the XRR data analysis, we found out annealing at 873K for 6hrs and 2hrs make MgO/TiO2 structure mixed all. Besides annealing at 673K for 6hrs and 2hrs changing the interface structure.
    Advisory Committee
  • Chih-Hsiung Liao - chair
  • Feng-Chuan Chuang - co-chair
  • Der-Jun Jang - co-chair
  • Yung-Sung Chen - advisor
  • Files
  • etd-0506116-162238.pdf
  • Indicate in-campus at 99 year and off-campus access at 99 year.
    Date of Submission 2017-09-13

    [Back to Results | New Search]


    Browse | Search All Available ETDs

    If you have more questions or technical problems, please contact eThesys