本實驗以氧化鎂(Magnesium Oxide, MgO)在473K左右時便會擴散(Interdiffusion)到氧化鋁(Alumina oxide, Al2O3)基板和別的材料為特性出發，成長二氧鈦(Titanium Oxide, TiO2)和氧化鎂的超晶格(Superlattice)結構。為了解成長MgO/TiO2異質磊晶超晶格結構之成長溫度和熱退火之後形成的MgTiO3層，選擇不同面向的氧化鋁基板上成長超晶格結構後，讓MgO和TiO2在不同溫度、時間下的熱退火的擴散效應。在室溫成長在C-, M-, R-, A-sapphire的基板後，並以X光反射率(X-ray reflectivity, XRR)為主要研究工具，研究薄膜的密度、厚度和粗糙度的變化。因為X光反射率和其他研究結構的工具相比，如穿透式電子顯微鏡(Transmission Electron Microscopy, TEM)、掃描式電子顯微鏡(Scanning Electron Microscope, SEM)、原子力顯微鏡原理(Atomic Force Microscopy, AFM)相比，其掃描範圍、光源照射和接收時的訊號範圍較大，其訊號為大範圍樣品的平均值，且解析度與之相比也可以到埃(Angstrom, Å)的等級。且X光反射率在金屬超晶格和其熱退火處理的分析已經非常完備，故為可行之發展技術，並將其應用在氧化物的熱退火分析上。
在室溫成長超晶格結構時，XRD和GIXRD並沒有顯示出結晶的訊號。但在退火473從XRR訊號發現在673K下退火不同時間則可以改變結構，在中間形成MgTiO3的混合層；873K退火兩小時和六小時已經讓MgO和TiO2互相擴散合成一層。

The MgO (Magnesium oxide) thin films start diffusing to the sapphire substrate at 473K. We investigate diffusion relation between the MgO and TiO2 superlattice structure and expect to find the best growing temperature and time for heteroepitaxy. By growing at different orientation Sapphire and sputtering power, we found the best growing condition for the single layer. We choose the XRR (X-ray reflectivity) signals as the mean tool to investigate the thickness, density, and roughness of the superlattice films. Comparing to other tools, such as TEM (Transmission electron microscopy), SEM(Scanning electron microscope) or AFM (Atomic force microscopy), that is much bigger scan region, better average signal receives and its resolution is coming to angstrom level. On the other hand, XRR technical was applied to metal superlattice and analysis science 1980, which had will define theory and fitting data. It is well-developed skill and suitable technic to apply to oxide superlattice. From the XRR data analysis, we found out annealing at 873K for 6hrs and 2hrs make MgO/TiO2 structure mixed all. Besides annealing at 673K for 6hrs and 2hrs changing the interface structure.

[論文審定書+i]
[致謝+ii]
[摘要+iii]
[Abstract+iv]
[目錄+v]
[圖目錄+vii]
[表目錄+x]
[第1章序論+1]
[1-1前言及研究動機+1]
[1-2材料特性與文獻回顧+2]
[1-2-1二氧化鈦特性(Titanium Oxide, TiO2)+2]
[1-2-2氧化鎂(Magnesium Oxide, MgO)+3]
[第2章實驗儀器及理論基礎+4]
[2-1磁控濺鍍系統+4]
[2-1-1濺鍍系統介紹+4]
[2-1-2濺鍍原理+5]
[2-2X ray繞射儀+6]
[2-2-1X-ray 系統介紹及X-ray 特性+6]
[2-2-2X-ray 掃描模式：XRD+7]
[2-2-3X-ray 掃描模式：GIXRD+8]
[2-3GenX XRR 分析+8]
[2-3-1厚度(Thickness)+9]
[2-3-2密度(Density)+11]
[2-3-3粗糙度(Roughness)+16]
[第3章實驗設計+18]
[第4章實驗結果與分析+20]
[4-1實驗參數+20]
[4-2A系列單層膜分析+22]
[4-3B系列多層膜分析+30]
[4-4C系列退火擴散分析+33]
[第5章結論+45]
[參考資料+46]

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