Title page for etd-0515100-125959


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URN etd-0515100-125959
Author Ching-Ju Huang
Author's Email Address barla_ju@yahoo.com
Statistics This thesis had been viewed 4581 times. Download 3083 times.
Department Materials Science and Engineering
Year 1999
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title The study of AlN thin film grown on bottom electrode under room temperature condition
Date of Defense 2000-05-16
Page Count 89
Keyword
  • prefer orientation
  • RF sputtering
  • aluminum nitride
  • bulk acoustic wave
  • Abstract In this study, highly C-axis oriented AlN thin films stacked upon Al bottom electrode on Si and Glass substrate are deposited with Reactive RF magnetron sputtering Technique. Three different sputtering systems were utilized to evaluate the optimized growth parameters. Room temperature growth was applied to the all system. During thin film growing , the substrate bias condition, sputtering work pressure, sputtering power and the N2 concentration are those key parameters to be adjusted in order to gain smooth surface morphology and highly C-axis prefer orientation AlN thin films.
    The crystallography of the deposited films was analyzed by x-ray diffraction (XRD). Film surface morphology was characterized by scanning electron microscopy (SEM). Meanwhile, transmission electron microscopy (TEM) was adopted to observe the microstructure and determine the grain size of the film.
    The results of the XRD patterns showed that in a 17cm long sputtering working distance condition, the AlN (002) can be obtained and the peak intensity can be increased when the sputtering power was fixed meanwhile reduced the working pressure and applied the negative bias on the substrate. The surface morphology can be improved with long working sputtering distance. The micrography of the TEM reveals that there is a transition region between Al metal and AlN film. Fine column structures can be observed in the initial growth stage. The size of the grain increased as the film became thicker. Strong AlN (002) ring pattern was obtained from the region of the top of the film. It indicates that the AlN (002) will not appear till the thickness of the film reach the critical thickness.
    Advisory Committee
  • Li-Wei Tu - chair
  • S.L. Huang - co-chair
  • K.Y. Hsieh - advisor
  • Files
  • 總集N.pdf
  • indicate access worldwide
    Date of Submission 2000-05-15

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