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博碩士論文 etd-0518114-135842 詳細資訊
Title page for etd-0518114-135842
論文名稱
Title
雙擴散與絕緣層上矽之金氧半場效電晶體於隨機電信雜訊分析與可靠度研究
Investigation on Random Telegraph Signal and Reliability of Silicon-On-Insulator & Double Diffused Drain MOSFETs
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
120
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2014-06-13
繳交日期
Date of Submission
2014-06-18
關鍵字
Keywords
熱載子劣化、雙擴散汲極金氧半場效電晶體、電荷充放電技術、絕緣層上矽、隨機電信雜訊
SOI, Charge Pumping, Random Telegraph Signal, hot carrier stress, double diffused drain
統計
Statistics
本論文已被瀏覽 5735 次,被下載 1383
The thesis/dissertation has been browsed 5735 times, has been downloaded 1383 times.
中文摘要
現代人對於3C用品不斷地追求輕薄與更快的處理速度,積體電路勢必不斷微縮。電晶體隨著莫爾定律(Moore’s Law)以每18個月單位面積的電晶體數以倍數成長,這不但降低了製程成本並且提高了IC的處理速度。但隨之而來的幾個問題也等待著我們去克服,例如:1.隨著通道長度越做越小,短通道效應也越明顯,這會使漏電增加、閘極無法有效控制電晶體。2.製成不斷微縮下,通道截面積愈小情況下,介面缺陷對於通道內載子傳輸影響日益嚴重。如何運用量測技術探討介面缺陷對於元件的影響,正是此次研究的課題。
論文研究方向第一部分是以隨機電信雜訊(Random Telegraph Signal)量測作為缺陷的探討與研究。實驗所使用的元件為部分空乏的絕緣層上矽n型金氧半場效電晶體(PD SOI nMOSFETs)。實驗中發現有明顯RTN的汲極(D)電流是坐落於中度反轉,所以首先利用變溫與變汲極(D)電壓在中度反轉下探討電流是由擴散電流或漂移電流所主導,並利用所主導的電流判斷反轉層電子濃度分布情形,進一步以RTN訊號定性的分析介面缺陷的分布狀況。
論文第二部分研究方向是以電荷充放電技術(Charge Pumping)作為STI的探討與研究。使用的元件為雙擴散汲極p型金氧半場效電晶體。當元件經由2000秒熱載子劣化後,發現在關閉狀態下會有ID漏電的產生,經由一般電性與電荷充放電技術去分析熱載子劣化對元件影響。之後提出漏電機制,並利用模擬、電荷充放電技術(Charge Pumping)與不同STI結構對此假設的機制提出進一步驗證。
Abstract
Transistors with Moore's Law to the number of transistors per unit area of 18 months to grow geometrically, which not only reduces the cost of the process and improve the processing speed of the IC. Several issues attendant also waiting for us to overcome, such as: Continued scaling process, the interface defects affect the carrier transport in the channel is getting worse. How to use technical analysis interface defect becomes a very important research. This is also the subject of study. The first part of the thesis is based on Random Telegraph Signal measurements to explore and research as defect. Device used for the PD SOI n-MOSFETs. It was found that a significant drain of RTN Current is located in moderate inversion. So first discuss the current dominant mechanism, and use RTN to further analysis the distribution of interface defects The second part of the investigation is based on the Charge Pumping technology as to explore and research the STI. Device used for the double diffused drain p-type metal oxide semiconductor field effect transistors. After 2000 seconds hot carrier stress was found in the off state will produce drain leakage current. The impacts of hot carrier stress in device were analyzed by the conventional electric measurement and Charge Pumping technology. After proposed leakage mechanisms, the experiment use simulation, Charge Pumping technology, STI with different structure to verification the mechanisms.
目次 Table of Contents
誌謝 i
中文摘要 ii
Abstract iv
目錄 vi
圖次 viii
表次 xiv
第一章概論 1
1-1研究背景 1
1-2研究動機 2
第二章文獻回顧 3
2-1絕緣層上矽(Silicon On Insulator, SOI) 3
2-1-1 浮體效應(Floating Body Effect, Kink Effect) 3
2-1-2 自熱效應(Self-Heating Effect) 4
2-2功率電晶體 (Power MOSFETs) 5
2-3隨機電信雜訊 (Random Telegraph Noise, RTN) 5
2-3-1 RTN原理 6
2-3-2 RTN的電流變化量(ΔId) 7
2-3-3 Shockley-Read-Hall (SRH) 8
2-3-4 RTN在不同缺陷型態的變化趨勢 9
2-4電荷充放電技術(Charge pumping) 9
2-4-1 Charge pumping設置與原理 10
第三章量測儀器與實驗參數 24
3-1實驗參數 24
3-2RTN參數 25
3-2量測儀器 26
第四章SOI的RTN研究 30
4-1簡介 30
4-2實驗設置與SOI量測樣品 31
4-3ID-RTN電流主導機制 31
4-3-1擴散電流與漂移電流 32
4-3-2不同VDS之電流分析 34
4-3-3不同溫度之電流分析 35
4-4一階RTN分析 37
4-4-1不同VDS下RTN分析 38
4-4-2不同VGS下RTN分析 38
4-4-3電流變化率之RTN分析 39
4-5多階RTN分析 41
4-5-1電流變化率之RTN分析 41
4-5-2二階RTN之中間電流平均時間分析 42
第五章DDD MOSFET可靠度研究 70
5-1簡介 70
5-2實驗設置與DDD MOSFETs量測樣品 71
5-3一般IV分析 72
5-3-1 IV量測 72
5-3-2 ICP量測 73
5-4Off State漏電分析 74
5-4-3 OFF電流分析 74
5-4-3 OFF電流漏電機制 75
5-5Off State漏電機制實驗證明 76
5-5-1 實驗模擬 76
5-5-2 ICP實驗驗證 77
5-5-3 不同STI製成之實驗驗證 78
第六章結論 98
參考文獻 100
參考文獻 References
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