本研究目的在於探討氧化亞銅薄膜之特性作為太陽能電池之應用。我們利用真空熱氧法於銅箔基板上生長氧化亞銅薄膜，且製程溫度均為800°C，經由改變通入氧氧流量及氮氣流量混合的比例來得到不同性質表現之氧化亞銅薄膜，我們將探討摻氮製程條件下氧化亞銅薄膜特性的變化。
我們以場發射掃描式電子顯微鏡(FE-SEM)觀察氧化亞銅薄膜在氧氮比為1:1、1:3及1:5之表面形貌，其中在氧氮比為1:3時有最大薄膜晶粒尺寸達到10 μm；在材料結構方面，我們以低銳角進行X光繞射(XRD)分析，亦可得到Cu2O (111)單一主要強度晶格方向，同時也有效抑制Cu (111)晶相的成長。在材料光電特性方面，我們分別量測UV-visible光譜儀、四點探針及霍爾量測，得知摻氮氧化亞銅薄膜能隙約為2.04 eV；在氧氮比為1:5我們量測得到最佳載子漂移率達176 cm2/Vs及電阻率為6.7×103 Ω-cm。
本實驗所研製之太陽能電池元件，在氧化亞銅薄膜高溫燒結20分鐘後接著沉積一層n-type ITO薄膜，最後在ITO層上方濺鍍鋁電極便完成太陽能電池元件，於AM1.5 (1000W/m2)照光下得到最佳的功率轉換效率可達0.34 %，其開路電壓、短路電流密度及填充因子分別為0.24 V、5.723 mA/cm2、0.247。

In this study, properties of Cu2O thin films for photovoltaic applications were investigated. The Cu2O thin films were prepared by vacuum oxidation at 800°C on copper substrates. By changing the nitrogen and oxygen partial pressure during oxidation, we obtained Cu2O thin films with different properties. We will discuss the characteristics of N-doped Cu2O thin film under different process conditions.
The surface morphology of the Cu2O thin films obtained at a oxygen to nitrogen partial pressure of 1:1, 1:3 and 1:5 was observed by FE-SEM. The maximal grain size of 10 μm was obtained at a partial pressure of 1:3. The structures of Cu2O thin films were characterized by glancing incident angle X-Ray diffraction (XRD). Clear crystal orientation at Cu2O (111) plane was observed, and Cu (111) phase was suppressed effectively. The optical and electrical properties of Cu2O thin films were measured by UV-VIS spectrophotometer, four-point probe system and Hall measurement. The band gap of N-doped Cu2O thin films were about 2.04 eV. The best mobility and resistivity of the thin films were 176 cm2/Vs and 6.7×103 Ω-cm at the oxygen to nitrogen partial pressure of 1:5.
The solar cell devices were obtained by sintering the Cu2O thin films at 800°C for 20 min and followed by depositing a thin n-type ITO thin film. The devices were completed by depositing Al electrodes on top of the thin ITO layer. The best conversion efficiency of the solar cell was 0.34% under AM1.5 (1000W/m2) radiation. The measured open-circuit voltage, short-circuit current density, fill factor were 0.24V、5.723 mA/cm2、0.247, respectively.

第一章 導論 1
1-1 前言 1
1-2 太陽能電池原理 1
1-3 太陽能電池分類與發展現況 2
1-3-1 氧化亞銅太陽能電池 3
1-4 研究動機 4
第二章 製程材料與儀器介紹 6
2-1 氧化亞銅 (Cuprous Oxide) 6
2-2 真空熱氧法 7
2-3 射頻磁式濺鍍系統 8
2-4 量測儀器介紹 9
2-4-1 表面輪廓儀 (Surface Profiler) 9
2-4-2 四點探針 (Four-point probe) 10
2-4-3 場發射型掃描式電子顯微鏡 (FE-SEM) 11
2-4-4 雙晶薄膜X光繞射儀 (X-Ray Diffractometer) 11
2-4-5 霍爾量測 (Hall Measurement) 13
2-4-6 紫外光-可見光光譜儀 (Ultraviolet/Visible Spectrophotometer) 13
2-4-7 太陽光模擬器 (Solar Simulator) 15
第三章 實驗步驟 16
3-1 實驗流程規劃 16
3-2 氧化亞銅薄膜製程 17
3-3 氧化銦錫與金屬鋁薄膜製程 19
3-4 太陽能電池製作流程 20
第四章 結果與討論 22
4-1 氧化亞銅薄膜特性分析 22
4-1-1 晶相結構分析 22
4-1-2 表面形貌及斷面結構 23
4-1-3 載子漂移率及電阻率量測 26
4-1-4 薄膜光學特性量測 28
4-2 太陽能電池量測分析 31
第五章 結論 34
參考文獻 35

[1] Atmospheric attenuation for top of the atmosphere, AM0 and for an atmospheric optical depth of 1.5, AM1.5”http://venturaphotonics.com/ClimateChange.html”
[2] S. M. Sze, Semiconductor Device Physics and Technology, 2nd edition,
John Wiley & Sons, Inc., New York, 1981
[3] V. Georgieva, M. Ristov, “Electrodeposited cuprous oxide on indium tion oxide for solar application”, Solar Energy Materials＆Solar Cells, vol. 73, pp. 67-73, 2002.
[4] S. S. Jeong, A. Mittiga, E. Salza, A. Masci, S. Passerini, “ElectrodepositedZnO/Cu2Oheterojunction solar cells”, Electrochimica Acta, vol. 53, pp. 2226-2231,2008.
[5] A. Mittiga, E. Salza, F. Sarto, M. Tucci, and R. Vasanthi, “Heterojunction solar cell with 2% efficiency based on a Cu2O substrate”, Applied Physics Letters, vol.88, no.163520, 2006.
[6] H. tanaka, T. Shimakawa, T. Miyata, H. Sato, T. Minami,“Effect of AZO film
deposition conditions on the photovoltaic properties of AZO-Cu2O heterojunctions”Applied Surface Science, vol.244, pp. 568-572, 2005.
[7] T. J. Hsueh, C. L. Hsu, S. J. Chang, P. w. Guo, J. H. Hsiehc and I. Chend,“Cu2O/n-ZnO nanowire solar cells on ZnO：Ga/glass templates”, Scripta Materialia, vol. 57, pp. 53-56, 2007.
[8] J. Chen, Y. Zhang, B. J. Skromme, K. Akimoto, S. J. Pachuta, “Properties of the
shallow O-Related acceptor level in ZnSe”, Applied Physics, vol. 78, pp.
5109-5119, 1995.
[9] K. Akimoto, S. Ishizuka, M. Yanagita, Y. Nawa, Goutam K. Paul, T. Sakurai, “Thin film deposition of Cu2O and application for solar cells”, Solar Energy, vol.
80, pp.715-722, 2006.
[10] S. Ishizuka, S. Kato, S. Okamoto, Y. Akimoto, K. 2002. “Hydrogen treatment for polycrystalline nitrogen-doped Cu2O thin film”, Journal of Crystal Growth, vol.237-239, pp. 616-620, 2002.
[11] Tadatsugu Minami, Yuki Nishi, and Toshihiro Miyata“ High-Efficiency
Cu2O-Based Heterojunction Solar Cells Fabricated Using a Ga2O3 Thin Film as
N-Type Layer” Appl. Phys. Express 6 (2013) 044101
[12] http://zh.wikipedia.org/wiki/File:CopperIoxide.jpg
[13] 陳乃為“銅氧核殼奈米顆粒間交互作用對自旋極化之影響”,國立中央大學,(2008)
[14] http://micron.ucr.edu/public/manuals/Sem-intro.pdf
[15] Institute of physics “Episode 530：x-ray diffraction”
[16] U. S. Geological Survey Open-File Report 01-041 “A Laboratory Manual for X-Ray Powder Diffraction”
[17] http://krg.asu.edu/Facilities_Update_15.html“Ecopia HMS-3000 Hall Effect Measurement System”
[18] UV- VisibleSpectroscopy“http://www2.chemistry.msu.edu/faculty/reusch/
VirtTxtJml/Spectrpy/UV-Vis/uvspec.htm”
[19] Applied Physics Express 4 (2011) 062301