本研究以氫化物氣相磊晶法(hydride vapor phase epitaxy,HVPE)在藍寶石(c-Al2O3)基板及圖案化藍寶石基板(Pattern sapphire substrate, PSS)上成長氮化鎵厚膜。實驗方式為通入反應氣體氯化氫(HCl)與鎵金屬反應成為氯化鎵(GaCl)，並在有氫氣(H2)和氮氣(N2)氛圍下與氨氣(NH3)反應形成氮化鎵，並調控反應壓力、基板位置、載流氣體(N2/H2)及NH3/HCl氣體之間Ⅴ/Ⅲ比來成長高品質厚膜。實驗分為兩部分;第一部分為在藍寶石基板生長高品質氮化鎵厚膜;第二部分則是在PSS上生長氮化鎵厚膜，並使用掃描式電子顯微鏡(SEM)來觀察樣品的表面形貌和截面，另外也使用X光繞射分析儀(XRD)分析其結晶品質，並使用光致螢光光譜儀(PL)量測光學性質及拉曼光譜量測應力關係，再利用穿透式電子顯微鏡對生長在PSS基板上的氮化鎵作分析,探討其磊晶關係並發現在PSS基板上生長氮化鎵厚膜的生長機制接近於側向外延成長法。

In this thesis, we use hydride vapor phase epitaxy (HVPE) system to grow thick gallium nitride (GaN) on sapphire (c-Al2O3) and Pattern sapphire substrate (PSS).
The reaction of our experiment is using GaCl which react from HCl and Ga metal and NH3 as reactor under H2 and N2 atmosphere to obtain GaN. By control of reaction pressure, substrate location, carrier gas and V/III ratio of NH3/HCl to obtain high quality thick GaN film.The experiment can be divided into two parts: First part, we grew high quality thick GaN film on sapphire; Second part, grew high quality thick GaN film on pattern sapphire substrate. The surface morphology and cross-sectional were analyzed using scanning electron microscope (SEM). Crystal quality of GaN was investigated by X-ray diffraction (XRD). Optical properties characterized by photoluminescence (PL) and Raman spectroscopy. Detailed characteristics of GaN growth on PSS and relation between GaN thick film and PSS were analyzed by TEM. In this study, we observed that growth mechanism of GaN thick film grown on PPS substrate is close to epitaxial lateral overgrowth (ELOG).

目錄
論文審定書...................…………………………………………………...................………….……i
致謝……………………………………………………………………………......................………....ii
摘要 ................................................................................................................................iii
英文摘要 ..........................................................................................................................iv
目錄 .................................................................................................................................v
圖目錄..............................................................................................................................vii
表目錄...............................................................................................................................x
第一章 前言……..………….………………………………………….......................………………. 1
第二章 研究背景與動機...................................................................................................... 2
2-1 氮化鎵材料介紹. .................................................................................................... 2
2-2 異質磊晶成長......................................................................................................... 3
2-3 藍寶石基板............................................................................................................ 4
2-4 圖案化藍寶石......................................................................................................... 6
2-5 緩衝層…............................................................................................................... 6
2-6 氫化物氣相磊晶法 ................................................................................................. 7
2-7 研究動機 .............................................................................................................. 9
第三章 實驗內容..…........................................................................................................ 10
3-1 實驗先前準備過程................................................................................................ 10
3-1-1實驗過程所需工具.............................................................................................. 10
3-1-2基板準備工作..................................................................................................... 10
3-2 實驗流程............................................................................................................. 11
3-3 實驗裝置............................................................................................................. 12
3-4 實驗方法與步驟 .................................................................................................. 14
3-4-1GaN在藍寶石基板生長步驟 ................................................................................ 14
3-4-2 GaN在圖案化藍寶石基板生長步驟 ...................................................................... 15
3-5 量測設備簡介....................................................................................................... 17
3-5-1 掃描式電子顯微鏡(Scanning Electron Microscope, SEM).…................................…17
3-5-2 X光繞射分析儀 (X-ray diffraction, XRD) …....…………....…….............................….17
3-5-3 光致螢光光譜儀 (Photoluminescence Spectroscopy, PL)......................................18
3-5-4 拉曼光譜儀 (Raman Spectroscopy)………………………………..............................18
3-5-5 穿透式電子顯微鏡 (Transmission Electron Microscopy, TEM)….........................….18
第四章 實驗結果與討論.....................................................................................................20
4-1 V/III比對生長GaN厚膜於藍寶石的影響........................................................................ 20
4-1-1 掃描式電子顯微鏡分析..……………….…………….......................……….....………22
4-1-2 X光繞射分析.…………………………………………........................……..…………..25
4-2 生長時間對生長GaN厚膜於藍寶石的影響.................................................................... 27
4-2-1掃描式電子顯微鏡分析…..……………………………........................….…....….……29
4-2-2 X光繞射分析……..………………………………….........................………….…..…..33
4-2-3拉曼光譜分析……………………………………….........................…….…….…...…..35
4-2-4光激發光譜(PL)分析…………………………………….........................…….……..….37
4-3 更改載流氣體氮氣在圖案化藍寶石基板上生長GaN …….…...........................….……..… 38
4-3-1掃描式電子顯微鏡分析….……………………………….........................….………..…40
4-3-2 X光繞射分析……………………………………………..........................….……......…45
4-3-3 光激發光譜(PL)分析…..……………………………….........................…………........47
4-3-4 拉曼光譜分析..…………………………………..........................………………..…....49
4-3-5 穿透式電子顯微鏡分析………………………..........................…………………..…...50
第五章 結論..................................................................................................................... 54
參考文獻......................................................................................................................... 56

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