本研究於高溫下以氮氫混合氣(N2/H2)所營造的低氧環境(low oxygen atmosphere)進行(001)矽單晶的氮化反應(nitridation)。所成長的氮化矽(Si3N4)以X-ray繞射分析儀(X-ray Diffractometer, XRD)、掃描式電子顯微鏡(Scanning Electron Microscopy, SEM)、穿透式電子顯微鏡(Transmission Electron Microscopy, TEM)與能量散射光譜儀(Energy Dispersive Spectrometer, EDS)分析其組成與微結構；並透過氧化鋯式微氧分析儀(Zirconia Oxygen Analyzer)量測反應期間的氧氣分壓力(PO2)，以了解氧化反應於氮化反應中的角色。研究目的在於改變反應溫度、時間、添加劑提供不同的成長環境，探討α-與β-相氮化矽的成長機制(growth mechanism)；研究結果經歸納後，更深入探究α-Si3N4奈米線、Si3N4-SiO2核殼奈米線、Si3N4-SiO2混合層以及β-Si3N4晶柱的成長過程，兩個關於(001)矽單晶於低氧環境氮化的反應模型因此被建立。

The article is about the nitridation of (001) silicon single crystal under low oxygen atmosphere filled up of N2/H2 at high temperature. We characterized the composition and microstructure of Si3N4 via X-ray Diffractometer, Scanning Electron Microscopy, Transmission Electron Microscopy, and Energy Dispersive Spectrometer. Moreover, the O2 pressure was measured via Zirconia Oxygen Analyzer to know the role of O2 during nitridation. To summarize, this study analyzed the growth mechanisms of α- and β-Si3N4 in different environments, with changing the reaction temperature, reaction time, and additives. To discuss the growth process of α-Si3N4 nanowires, Si3N4-SiO2 core-shell nanowires, Si3N4-SiO2 mixture layer, and β-Si3N4 crystal, our research suggested two models for the nitridation of (001) silicon single crystal under low oxygen atmosphere.

中文摘要 i
英文摘要 ii
目錄 iii
表目錄 vi
圖目錄 viii
第一章　前言 1
第二章　文獻回顧 3
2.1 Si3N4結構與特性 3
2.1.1 β-Si3N4 3
2.1.2 α-Si3N4 4
2.1.3 α/β-Si3N4相變化 7
2.2氮化反應機制 9
2.2.1化學氣相沉積法(Chemical vapor deposition, CVD) 10
2.2.1.1 VLS成長機制(Vapor-Liquid-Solid mechanism) 11
2.2.1.2 VS成長機制(Vapor-Solid mechanism) 23
2.2.2直接氮化反應 30
2.2.2.1氣-固相氮化反應 30
2.2.2.2氣-液相氮化反應 36
2.2.3氧化反應的影響 41
第三章　實驗流程與分析儀器 48
3.1實驗流程 48
3.1.1實驗材料 48
3.1.2基材前處理 49
3.1.3氧氣分壓量測 50
3.1.4實驗步驟 50
3.2分析儀器 55
3.2.1 X-ray繞射分析儀(X-ray Diffractometer, XRD) 55
3.2.2掃描式電子顯微鏡(Scanning Electron Microscopy, SEM) 55
3.2.3穿透式電子顯微鏡(Transmission Electron Microscopy, TEM) 55
第四章　實驗結果 57
4.1低氧分壓氣氛 57
4.2結晶構造與相鑑定 59
4.3表面形貌與元素分析 69
4.4 TEM微結構分析 95
4.4.1 α-Si3N4奈米線 95
4.4.2 Si3N4-SiO2混合層 102
4.4.3 β-Si3N4晶柱 117
第五章　討論 129
5.1 α-Si3N4奈米線 129
5.1.1成長機制與反應途徑 129
5.1.2 Si3N4-SiO2核殼奈米線的形成 131
5.2 Si3N4-SiO2混合層 131
5.3 β-Si3N4晶柱 133
5.4低氧環境下(001)矽單晶氮化反應模型 135
第六章　結論 139
第七章　未來研究方向 141
第八章　參考文獻 142
附錄 145

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