本論文以溶膠-凝膠製程製備之的多孔隙氧化銦錫薄膜 ( Sol-gel ITO ) 作為介面緩衝層開發本體異質接面結構之有機高分子太陽能電池元件，電荷施體材料為 Poly ( 3-hexylthiophene ) ( P3HT ) 、電荷受體材料為 [6,6]-phenyl-C61- butyric acid methyl ester ( PC61BM )，整體元件結構為 ITO / Sol-gel ITO / PEDOT:PSS / P3HT:PCBM / Ca / Al ，除開發太陽能電池元件外，亦藉由觀測其薄膜表面特性與元件光電特性曲線探討不同熱退火製程對此溶凝膠製程之 ITO 薄膜之特性影響及對太陽能電池元件的影響。
結果顯示加入了 Sol-gel ITO 緩衝層後， ITO 陽極變得較為平整，且在穿透光譜上也發現有著紅移及穿透度略為提升的情況，進而改善了太陽光的利用效率。此外，亦從單載子電洞傳輸元件的研究結果發現，溶膠-凝膠 ITO 緩衝層的加入後確實有效地增加元件等效電洞遷移率，進而改善元件電洞收集效率，大幅提升使用溶膠-凝膠 ITO 作為界面緩衝層元件的短路電流，相較於無此緩衝層的元件短路電流可提升55%以上，且此研究結果具高重現性，製備 12 個元件後，平均功率轉換效率為3.68 %，標準差為0.10 %；最佳元件特性為: VOC = 0.60 V 、JSC = 11.35 mA/cm2 、F.F. = 0.58 與 PCE = 3.80 %。

In this thesis, a porous indium-tin-oxide film prepared by sol-gel process ( Sol-gel ITO ) is used as the interface buffer layer in bulk-heterojunction organic polymer solar cells. In the solar cells, the donor material is poly ( 3- hexylthiophene ) ( P3HT ) and the acceptor material is [6,6] -phenyl-C61-butyric acid methyl ester ( PC61BM ) with the following devices structure : ITO / Sol-gel ITO / PEDOT: PSS / P3HT: PCBM / Ca / Al. In addition to the development of solar cell devices, the studying of surface morphology and the optoelectrical properties of the devices with different post processed ITO substrates are also shown in this thesis.
The results show that the sol-gel ITO buffer layer atop ITO anode make the ITO substrate smoother. The sol-gel ITO red shifts the transmission spectrum and increases the transmission ration of the ITO substrates; thereby the solar cell devices use the sunlight in a more efficient way. Hole-only devices were also made to verify the function of the inserting sol-gel ITO layer. The equivalent hole mobility of the device was increased by the sol-gel ITO, indicating the hole collection efficiency of the solar cell would be increased as well. The short-circuit current of the device with sol-gel ITO as the interface buffer layer was increased up to 55% compared to it of the device without the buffer layer. The improvement of short-circuit current of the device by inserting sol-gel ITO layer is highly reproducible. In 12 devices with the sol-gel ITO layer, the average power conversion efficiency is 3.68% and the standard deviation is 0.10%. The best device exhibits VOC = 0.60 V, JSC = 11.35 mA / cm2, FF = 0.58 and PCE = 3.80%.

摘要 i
Abstract ii
圖目錄 vi
表目錄 viii
第一章 緒論 1
1-1 前言 1
1-2 太陽能電池簡介 2
1-3 有機太陽能電池種類介紹與演進 4
1-4 研究動機與目的 8
1-5 各章提要 9
第二章 基礎理論 10
2-1太陽光譜 10
2-2有機太陽能電池之原理與機制 13
2-2-1激子產生 ( Exciton formation ) 13
2-2-2激子擴散 ( Exciton diffusion ) 13
2-2-3激子分離 ( Exction dissociation ) 13
2-2-4電荷收集 ( Charge transport and collection ) 14
2-3光電特性分析 16
2-3-1 開路電壓 ( Open circuit voltage , Voc ) 16
2-3-2 短路電流 ( Short circuit current density , Jsc ) 16
2-3-3 填充因子 ( Fill factor, F.F. ) 16
2-3-4 光電轉換效率( Power conversion efficiency , PCE ) 16
2-3-5 RS、RSH 17
第三章 實驗流程與儀器介紹 18
3-1實驗架構 18
3-2 材料簡介 19
3-2-1 PEDOT:PSS 簡介 19
3-2-2 P3HT 簡介 20
3-2-3 PC61BM簡介 20
3-3 溶液製備 21
3-3-1 PEDOT:PSS 21
3-3-2 主動層 21
3-4 實驗流程 22
3-4-1 ITO 基板圖樣化 22
3-4-2 ITO 基板清洗 23
3-4-3 PEDOT : PSS 成膜 24
3-4-4 主動層成膜 25
3-4-5 陰極蒸鍍 25
3-4-6 元件封裝 26
3-4-7 電性量測 26
3-5 實驗製程儀器介紹 27
3-5-1 超音波震盪機 27
3-5-2 紫外光臭氧清洗機 27
3-5-3 旋轉塗佈機 27
3-5-4 低水氧手套箱 27
3-5-5 高真空熱蒸鍍系統 27
3-6 實驗量測儀器介紹 28
3-6-1 紫外光-可見光吸收頻譜儀 ( UV-Vis absorption spectrum ) 28
3-6-2 X-射線繞射儀 ( X-ray diffraction ) 29
3-6-3 掃描式電子顯微鏡 ( Scanning electron microscope ) 30
3-6-4 原子力顯微鏡 ( Atomic force microscopy ) 31
3-6-5 霍爾量測儀 ( Hall measurement ) 32
3-6-6 太陽光譜模擬量測系統 ( Solar simulator system ) 33
3-6-7 表面輪廓儀 ( Surface profiler ) 34
3-6-8 入射光子轉換電子效率 ( Incident photon-electron conversion efficiency ) 35
第四章 結果與討論 36
4-1 ITO 導電薄膜分析 36
4-1-1電性分析 36
4-1-2 表面分析 39
4-1-3 光學分析 42
4-1-4 晶相分析 44
4-2 主動層薄膜分析 45
4-2-1 表面分析 45
4-2-2 光學分析 48
4-3 有機太陽能電池之元件光電特性分析 49
第五章 結論 55
參考文獻 56

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