隨著科技快速的進步，顯示器產品已成為人們日常生活中不可缺少的一部份，而薄膜電晶體(thin film transistor)就在顯示器產品上扮演相當重要的角色。本論文中使用的薄膜電應體，主動層為IGZO是近期受矚目的金屬氧化物材料具有非晶矽與多晶矽的優點，具有高的電子遷移率、較佳的均勻度、較低的製程成本與可在室溫下製程。
隨著人們對解析度的要求越來越高，假若TFT於解析度1920*1080之面板實際操作時，每條掃描線關閉時操作在負偏壓而TFT又長時間處於關閉的狀態下，在關閉的情況下，外在環境對電晶體的影響變得非常重要，且因使用IGZO做為主動層材料具有多項優點且為寬能隙的材料是相當有潛力應用於次世代透明顯示器，而透明顯示器則易受環境光的影響，環境光中亦包含紫外光，而IGZO TFT易受高能量的紫外光影響。
因此，本論文主要探討金屬氧化物薄膜電晶體在負偏壓照光下的不穩定性，且藉由純照光電應力操作、NBTIS、Top Gate NBIS的實驗與ISE-TCAD模擬佐證，實驗研究的解釋，並且提出改善的方式。

With the evolution of modern technology, displays have been an important part in our life and thin film transistor plays a quite crucial role. Metal-oxide thin film transistor has attracted much attention recently since it possesses the advantages of both amorphous and polycrystalline silicon. Metal-oxide has the merits of good electron mobility and uniformity, lower manufacturing cost, and capability of fabricating at room temperature. In this work, amorphous Indium-Gallium-Zinc-Oxide is utilized as active layer of thin film transistor.
Today, requirements for higher resolution are absolute due to the emergence of retina display products. If the resolution is 1920*1080, TFTs operating can be exerted long-term negative bias while scan line operating in off-state condition. Therefore, in off- state condition and under exposing illumination, the effects from both environment and back lights are worthy of further investigation. Thin film transistors (TFTs) with active layers of InGaZnO4 have attracted much attention in industry for application in display in the next generation because it possesses advantageous properties and it is a wide bandgap material, which can be the potential candidate for transparent thin film transistors. Therefore, illumination effects, including ultra violet irradiation, need to be well investigated.
The electric characteristic degradation caused by negative bias illumination stress (NBIS) for a-InGaZnO4 thin film transistors is studied in this work. We discuss the variety of reliability issues, such as illumination stress、negative bias temperature illumination stress and top gate negative bias illumination stress…etc. Moreover, we also use ISE-TCAD simulation to further verify experimental results and recommend improved ways to produce idea design for displays.

誌謝 ii
中文摘要 iv
ABSTRACT v
目錄 vii
圖目錄 ix
表目錄 xiii
第一章、緒論 1
1.1研究背景 1
1.2主動層材料性質與優劣比較 3
1.3為何選擇A-IGZO? 7
1.4研究動機 9
第二章、元件結構與基本電性 10
2-1元件結構 10
2.2 元件基本特性 12
2.2.1電晶體輸出特性曲線與轉換特性曲線 12
第三章、參數萃取與儀器介紹 16
3.1參數萃取 16
3.1-1次臨界擺幅(Subthreshold Swing，S.S.) 17
3.1-2臨界電壓(Threshold Voltage，Vt) 18
3.1-3載子遷移率(Carrier mobility，μ) 18
3.2儀器介紹 20
第四章、不同厚度的銦鎵鋅氧薄膜電晶體的電性探討 24
4.1 不同主動層厚度的元件其異常電容電壓特性曲線 24
4.2銦鎵鋅氧薄膜電晶體於閘極偏壓電應力的探討 41
第五章、探討負偏壓照光下的電應力對銦鎵鋅氧薄膜電晶體的影響 47
5.1對不同厚度的主動層(銦鎵鋅氧)薄膜電晶體於負偏壓下照光的電應力探討 47
5.2改善負偏壓下照光電應力導致的臨限電壓偏移 64
第六章、結論 71
參考文獻 72

[1] J. S. Park, W.-J. Maeng, H.-S. Kim, and J.-S. Park, "Review of recent developments in amorphous oxide semiconductor thin-film transistor devices," Thin Solid Films, vol. 520, pp. 1679-1693, 2012.
[2] M. Orita, H. Ohta, M. Hirano, S. Narushima, and H. Hosono, "Amorphous transparent conductive oxide InGaO3 (ZnO) m (m≤ 4): a Zn4s conductor," Philosophical magazine B, vol. 81, pp. 501-515, 2001.
[3] T. Kamiya and H. Hosono, "Material characteristics and applications of transparent amorphous oxide semiconductors," NPG Asia Materials, vol. 2, pp. 15-22, 2010.
[4] J. S. Park, T. S. Kim, K. S. Son, W.-J. Maeng, H.-S. Kim, M. Ryu, et al., "The effect of UV-assisted cleaning on the performance and stability of amorphous oxide semiconductor thin-film transistors under illumination," Applied Physics Letters, vol. 98, p. 012107, 2011.
[5] H. Oh, S.-H. K. Park, C.-S. Hwang, S. Yang, and M. K. Ryu, "Enhanced bias illumination stability of oxide thin film transistor through insertion of ultrathin positive charge barrier into active material," Applied Physics Letters, vol. 99, p. 022105, 2011.
[6] J.-Y. Kwon, J. S. Jung, K. S. Son, K.-H. Lee, J. S. Park, T. S. Kim, et al., "The impact of gate dielectric materials on the light-induced bias instability in Hf-In-Zn-O thin film transistor," Applied Physics Letters, vol. 97, p. 183503, 2010.
[7] T.-C. Chen, T.-C. Chang, C.-T. Tsai, T.-Y. Hsieh, S.-C. Chen, C.-S. Lin, et al., "Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress," Applied Physics Letters, vol. 97, p. 112104, 2010.
[8] S. E. Ahn, I. Song, S. Jeon, Y. W. Jeon, Y. Kim, C. Kim, et al., "Metal oxide thin film phototransistor for remote touch interactive displays," Advanced Materials, vol. 24, pp. 2631-2636, 2012.
[9] S.-Y. Huang, T.-C. Chang, M.-C. Chen, T.-C. Chen, F.-Y. Jian, Y.-C. Chen, et al., "Improvement in the bias stability of amorphous InGaZnO TFTs using an Al 2 O 3 passivation layer," Surface and Coatings Technology, vol. 231, pp. 117-121, 2013.
[10] J.-M. Lee, I.-T. Cho, J.-H. Lee, and H.-I. Kwon, "Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors," Applied Physics Letters, vol. 93, p. 093504, 2008.
[11] F. Libsch and J. Kanicki, "Bias‐stress‐induced stretched‐exponential time dependence of charge injection and trapping in amorphous thin‐film transistors," Applied Physics Letters, vol. 62, pp. 1286-1288, 1993.
[12] S.-E. Liu, M.-J. Yu, C.-Y. Lin, G.-T. Ho, C.-C. Cheng, C.-M. Lai, et al., "Influence of passivation layers on characteristics of a-InGaZnO thin-film transistors," Electron Device Letters, IEEE, vol. 32, pp. 161-163, 2011.
[13] M. Nakata, H. Tsuji, H. Sato, Y. Nakajima, Y. Fujisaki, T. Takei, et al., "Influence of Oxide Semiconductor Thickness on Thin-Film Transistor Characteristics," Japanese Journal of Applied Physics, vol. 52, p. 03BB04, 2013.
[14] T.-C. Chen, T.-C. Chang, T.-Y. Hsieh, W.-S. Lu, F.-Y. Jian, C.-T. Tsai, et al., "Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor," Applied Physics Letters, vol. 99, p. 022104, 2011.
[15] J.-H. Shin, J.-S. Lee, C.-S. Hwang, S.-H. K. Park, W.-S. Cheong, M. Ryu, et al., "Light effects on the bias stability of transparent ZnO thin film transistors," Etri Journal, vol. 31, pp. 62-64, 2009.
[16] P. Liu, T. Chen, X. Li, Z. Liu, J. Wong, Y. Liu, et al., "Effect of exposure to ultraviolet-activated oxygen on the electrical characteristics of amorphous indium gallium zinc oxide thin film transistors," ECS Solid State Letters, vol. 2, pp. Q21-Q24, 2013.
[17] K. Takechi, M. Nakata, T. Eguchi, H. Yamaguchi, and S. Kaneko, "Comparison of ultraviolet photo-field effects between hydrogenated amorphous silicon and amorphous InGaZnO4 thin-film transistors," Japanese Journal of Applied Physics, vol. 48, p. 010203, 2009.
[18] T.-Y. Hsieh, T.-C. Chang, T.-C. Chen, M.-Y. Tsai, and Y.-T. Chen, "Investigating degradation behavior of InGaZnO thin-film transistors induced by charge-trapping effect under DC and AC gate bias stress," Thin Solid Films, vol. 528, pp. 53-56, 2013.
[19] H. Seo, Y.-J. Cho, J. Kim, K.-Y. Park, J. Lee, and D.-K. Choi, "Permanent optical doping of amorphous metal oxide semiconductors by deep ultraviolet irradiation at room temperature," Applied Physics Letters, vol. 96, p. 222101, 2010.
[20] J.-H. Shin, J.-S. Lee, C.-S. Hwang, S.-H. K. Park, W.-S. Cheong, M. Ryu, et al., "Light effects on the bias stability of transparent ZnO thin film transistors," Etri Journal, vol. 31, pp. 62-64, 2009.
[21] K. Takechi, M. Nakata, T. Eguchi, H. Yamaguchi, and S. Kaneko, "Comparison of ultraviolet photo-field effects between hydrogenated amorphous silicon and amorphous InGaZnO4 thin-film transistors," Japanese Journal of Applied Physics, vol. 48, p. 010203, 2009.
[22] T.-Y. Hsieh, T.-C. Chang, T.-C. Chen, M.-Y. Tsai, and Y.-T. Chen, "Investigating degradation behavior of InGaZnO thin-film transistors induced by charge-trapping effect under DC and AC gate bias stress," Thin Solid Films, vol. 528, pp. 53-56, 2013.
[23] H.-C. Cheng, C.-Y. Huang, J.-W. Lin, and J. J.-H. Kung, "The reliability of amorphous silicon thin film transistors for LCD under DC and AC stresses," in Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on, 1998, pp. 834-837.
[24] T.-Y. Hsieh, T.-C. Chang, T.-C. Chen, M.-Y. Tsai, and Y.-T. Chen, "Investigating degradation behavior of InGaZnO thin-film transistors induced by charge-trapping effect under DC and AC gate bias stress," Thin Solid Films, vol. 528, pp. 53-56, 2013.
[25] H.-C. Cheng, C.-Y. Huang, J.-W. Lin, and J. J.-H. Kung, "The reliability of amorphous silicon thin film transistors for LCD under DC and AC stresses," in Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on, 1998, pp. 834-837.