本研究提出使用工業量產之低成本塑膠觸控薄膜，結合高互導值場效應電晶體，開發高性能可拋棄式的酸鹼感測器(TPFET pH sensor)。其工業用觸控薄膜為本實驗所採用的感測材料，為分層鍍有雙面氧化銦錫/二氧化矽/五氧化二鈮(ITO/SiO2/Nb2O5)之可撓性聚對苯二甲酸乙二酯(PET)膜，厚度為180.2 μm。氧化銦錫鍍膜因具有可快速大量生產特性，故成本較低，且薄膜輕薄導電性佳，又具備有抗酸鹼特性，對水溶液中的離子具有良好的選擇性，針對水溶液中之氫離子量測有極大的優勢。因此我們在On-film系統中對此薄膜進行後製程的動作，在感測薄膜上加入一參考電極，使整個系統符合離子感測場效應電晶體(ISFET)的架構，再將此薄膜連結上自行設計的高互導值轉換電路與C0003晶片，與一般市售的電晶體IC相比，具有能將輸出訊號放大(4至6倍)的功效，且搭配插拔式插槽裝置，當感測薄膜長時間量測(6小時以上)受到腐蝕損壞時(電子顯微鏡下觀察)，方便薄膜快速更換，使其成為一種高性能氫離子濃度偵測裝置。我們利用該薄膜結合電晶體，採用ISFET原理組合成延伸式閘極離子感測場效應電晶體(EGFET)，開發出Off-film與On-film系統，用以量測該薄膜表面吸附氫離子所形成的電位。結果顯示，量測經由氫氧化鈉(NaOH)和鹽酸(HCl)所調配出來不同pH值的酸鹼溶液，範圍可達pH3到pH13，線性度和靈敏度分別為0.9915和60.90 mV/pH。在不同大小的感測面積量測下，感測薄膜最小可到邊長8×8 mm2。在長時間穩定度量測部分，將離子感測薄膜長時間浸泡在不同的pH值溶液內連續量測，其各點變異量均小於1%，此方式所開發出來的氫離子感測器所量測出來的酸鹼值具有低誤差、高穩定、再現性高和反應快速等特性。在循環階層的量測中，也再次獲得印證，在高離子濃度干擾的量測環境下也有一定的抵抗能力，極具有商品開發效益。

A high performance ion-sensitive field-effect- transistor (ISFET) based pH sensor utilizing commercial touch panel film (TPF) as the sensing material. The metal oxide layers (ITO/SiO2/Nb2O5) on the TPF is ideal for measuring dissociated hydrogen ions. A high transconductance MOSFET chip composed of 10 parallel FETs provided by CIC is used to convert the effective pH level into the equivalent gate voltage. A high current response of 2.156 mA/V is obtained in On-Film system due to the high transconductance property compared with commercial IC in Off-Film system. The industrial roll-to-roll process for producing the TPF film and the quick plugging slot make the sensing layer suitable for disposable applications. An Ag/AgCl reference electrode will integration on the film after back-end process. The On-film system is also produced to further enhance the sensing performance and reduce the system volume. Results show that the TPF-based pH sensor exhibits good response (60.9 mV/pH) for detecting solutions of the pH values in 3-13. The rapid time response (< 30 s) and good stability (C.V. < 2%) also confirmed the sensing performance of the developed pH sensor under different pH conditions. Observed the difference in surface structure of the sensing film under the scanning electron microscope. The film was mot damage of using less than 60 minutes in the sample solution. Moreover, the sensor also shows low response to the interference ions in various solutions of normal saline, city water and DI water. Results showed that the developed pH sensor was not sensitive to the ionic strength of the sample solutions. In the section of conversion circuit design. This study used an operational amplifier, changing the resistance value of its negative feedback to enhance sensitivity of the system (four to six times). The developed pH sensor has presented its capabilities for rapid and low-cost hydrogen ion detections.

論文授權書 i
論文審定書 ii
致謝 iii
中文摘要 iv
Abstract v
目錄 vi
圖目錄 ix
表目錄 xii
符號表 xiii
簡寫表 xvi
第一章 緒論 1
1.1 前言 1
1.2 酸鹼感測器的應用 2
1.2.1 酸鹼感測器種類與原理 3
1.2.2 酸鹼感測器效能評斷 6
1.3 離子感測場效電晶體感測器 9
1.3.1 ISFET離子感測場效應電晶體 9
1.3.2 Bio-ISFET生醫感測之應用 11
1.3.3 EGFET延伸閘極式感測場效應電晶體 13
1.4 ITO氧化銦錫薄膜發展與應用 16
1.5 研究動機與目的 19
1.6 論文架構 20
第二章 材料製備及原理 21
2.1 ITO導電觸控薄膜製備 21
2.2 系統偵測原理 24
2.2.1 離子感測場效應電晶體量測原理 24
2.2.2 吸附鍵結理論 26
2.2.3 電雙層模型原理 28
第三章 元件封裝與實驗架設 32
3.1 感測元件設計 32
3.1.1 MOSFET晶片封裝 32
3.1.2 薄膜晶片後製程 36
3.2 氫離子酸鹼量測系統 38
3.2.1 Off-Film氫離子量測系統 38
3.2.2 On-Film氫離子量測系統 39
3.2.3 Off-Film與On-Film數據擷取系統 41
第四章 實驗結果與討論 44
4.1 MOS IC特性曲線分析 44
4.2 酸鹼範圍量測分析 49
4.3 感測面積對效能影響 52
4.4 薄膜與參考電極間距離影響 55
4.5 系統響應時間分析 57
4.6 酸鹼環境下長時間重複性量測 59
4.6.1 固定酸鹼值長時間量測分析 59
4.6.2 循環式長時間量測分析 60
4.7 混合物中離子干擾測試 63
4.8 ESEM表面觀察與EDAX組成分析 66
4.9 後端轉換電路模擬 68
第五章 結論與未來展望 71
5.1 結論 71
5.2 未來展望 74
參考文獻 75
自述 84

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