在本論文中，利用半導體製程技術來製作埋藏式波導。使用的結構是屬於平坦式的光波電路(PLCs)，因為它有平坦的表面架構，將來元件的應用範圍可從被動元件到主動元件。然而，在整個波導的主要製作包括蝕刻玻璃，研磨高分子材料及蝕刻波導的側邊結構。
玻璃是一種非常難蝕刻的材料，因此必須尋找抗蝕刻能力很強的保護層，最後選用熱蒸度方式成長鉻(Cr)，因它易於成長及抗蝕刻能力強，則使得玻璃與鉻的蝕刻率分別為1000Å/min及130Å/min，蝕刻完後，利用塗鋪方式在慢速底下鋪上高分子材料polyimide後而烘烤300℃時間90分鐘，烘烤完後，為了要除去部分的高分子材料polyimide來作平坦化結構，就利用砂紙及氧化鋁粉來研磨，而後鋪上SOG當保護層來隔絕高分子材料polyimide與空氣接觸，最後就利用RIE來蝕刻光波導側邊以便減少scatter loss。在量測上，使用cut-back方式，針對1.3μm的波長作量測，對TE波有3dB/cm的傳波損耗及TM波有4.6dB/cm的傳波損耗。

A buried polyimide waveguide fabricated on glass substrate using semiconductor processing technologies is presented. The proposed structure is applicable to planar lightwave circuits (PLCs) because of planar surface morphology of the device. Potential applications of the device range from passive optical coupler to active modulators. The fabrication steps of the buried polyimide waveguide include deep etching, polishing of polyimide, global planarization and formation of waveguide end facets.
Deep glass etching requires a hard etching mask in order to prevent unwanted etching of the under laying material. Chromium(Cr) is one of the best making material because it is easy to grow and hard to etch. The Cr thin film was deposited the glass substrates using a thermal evaporation system.
The glass substrate was etched by reactive ion etching (RIE) using SF6 and O2 (SF6:O2=20:1) mixture. Etching rate of glass and Cr were 0.1µm/min and 130Å/min, respectively. After etch, the polyimide guiding layer of the waveguide was spin-coating at a slow spinning speed onto the glass substrate, and was cured at 300℃for 1.5 hr. The uneven surface of the device was planarized by lapping the polyimide down to the glass substrate. Both the abrasive paper and Al2O3 powder were used in the process. Then a thin layer of SOG (spin-on-glass) was coated on the top of the waveguide to isolated the polyimide from the air. Finally, the end facets of the waveguide were form by RIE etching without further polishing. The propagation loss of the waveguide was measured by conventional cut back method. The polarized lights at 1.3um were launched into the waveguide by end-face optical coupling. The propagation losses of the waveguide are 3dB/cm for TE wave and 4.6dB/cm for TM wave, respectively.

第一章 導論 1
第二章 光場分佈理論分析 5
第一節 探討場的分佈 6
第二節 結果與探討 9
第三章 光場分佈理論分析 12
第一節 材料分析 12
第二節 保護層材料的成長 13
第三節 濕蝕刻條件的分析 14
第四節 乾蝕刻的分析 15
第五節 高分子材料的研磨 16
第六節　結論 17
第四章 元件的製作 23
第一節 元件製作流程 23
第二節 結論 32
第五章 波導特性量測 36
第一節 量測方法 36
第二節 結果與討論 37
第六章 結論

1.T. Tamir : Integrated Optics, 2nd. Topics Appl. Phys., Vol.7 (Springer, Berlin, Heidelberg, New York 1979 )Chap. 1
2.Digest of Technical Papers, Topical Meeting on Integrated Optics-Guided Wave, Material and Devices, Las Vegas, NV (Optical Society of America 1972)
3.Schmidt, R.V. and I.P. Kaminow, “Metal–diffused optical waveguides in LiNbO3”,Appl Phys. Lett., vol. 25, pp. 458-460, Oct. 1974.
4.O. Parriaux, J. L. Coutax, A. Girod, G. H. Chartimer and V. Neuman, “Buried single-mode waveguides in glass”, IEEE trans. On components, and manufacturing tech.. vol. 5, pp. 209-211, June 1982.
5. R.A. Steinberg, T.G. Giallorenzi, R. G.Priest, “Polarization insensitive integrated-optical switches: a new electrode design”, Appl. Opt., vol 16 ,Aug. 1977.
6. Uehara, S., T. Izawa, and H. Nakagome, “Optical waveguide polarizer”, Appl. Opt., vol. 13, pp. 1753-1754, Aug. 1974.
7. W.E. Martin, “ A new waveguide switch/modulator for integrated optics”, Appl. Phys. Lett. , vol. 26, pp. 562-564, May 1975.
8. M.H. Lee, H.J. Lee, S.G. Han, H.-Y. Kim, K.H. Kim, Y.H. Won , S.Y. Kang, “Fabrication and characterization of and electro-optic polymer waveguide modulator for photonic applications”, Thin Solid Films, vol. 303, pp. 287-291 June 1996.
9. Sasaki, H., E. Shiki, and N. Mikoshiba. “Propagation characteristics of optical guided waves in asymmetric branching waveguides”, IEEE J. Quantum Electron., vol. 17, pp.1051-1058,June 1981.

10. Mikami, O. and S. Zembutsu, “Coupling-length adjustment for and optical directional coupler as a 2×2 switch”, Appl. Phys. Lett., vol. 35, pp.2321-2325,Dec. 1981.
11. Rics, R.R., J.D. Zino, D.A. Bryan, E.A. Dalke and W.R. Reed, “Multiwavelength monolithic integrated fiber-optic terminal”, Proc. Soc. Photo-Optical Instr. Eng., vol. 176, pp. 133,1979.
12. Watanabe, R. and K. Nosu, “Slab waveguide demultiplexer for multimode optical transmission in the 1.0-1.4µm wavelength region”, Appl. Opt., vol. 19, pp. 3588, Nov. 1980.
13. T. Fujino, K. Sasaki and K. Marumoto, “X-ray mask fabrication process using Cr mask and ITO stopper in the dry etch of W absorber”, Jpn. J. Appl. Phys. , vol. 31, pp. 4086-4090, Dec. 1992.
14. R. Hsial and J. Carr,”Si/SiO2 etching in high density SF6/CHF3/O2 plasma”, Materials science and Engineering B, pp. 63-77,1998.
15. J. Kobayashi, T. Matsuura, S. Sasaki, and Maruno, “Single-mode optical waveguides fabricated from fluorinated polyimides”, Appl. Optics, vol. 37,pp.1032-1037,1998.
16. A. J. McLaughin, J. R. Bonar, M. G. Jubber and P. V. S. Marques, “Deep, vertical etching of flame hydrolysis deposited hi-silica glass films for optoelectronic and bioelectronic applications”. J. Vac. Sci. Techno. B(16)4, pp. 1860-1863, Jul 1998.
17. Kaminow, I.P. and J.R. Carruthes, “ Optical waveguideing layers in LiNbo3 and LiTaO3”, Appl Phys. Lett., vol. 22, pp. 326-328, Apr. 1973.
18. 莊泰斌, “ 建構在玻璃上埋藏式高分子波導”,中山大學光電所碩士文,1999