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論文名稱 Title |
利用平坦化製程技術製作並量測1.3um InGaAsP雷射二極體 Fabrication and Characterization of Planar 1.3um InGaAsP Diode Lasers |
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系所名稱 Department |
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畢業學年期 Year, semester |
語文別 Language |
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學位類別 Degree |
頁數 Number of pages |
51 |
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研究生 Author |
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指導教授 Advisor |
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召集委員 Convenor |
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口試委員 Advisory Committee |
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口試日期 Date of Exam |
2002-06-05 |
繳交日期 Date of Submission |
2002-06-10 |
關鍵字 Keywords |
平坦化、雷射 planar |
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統計 Statistics |
本論文已被瀏覽 5724 次,被下載 6005 次 The thesis/dissertation has been browsed 5724 times, has been downloaded 6005 times. |
中文摘要 |
本篇論文主要是利用平坦化製程技術,製作1.3μm 雷射二極體。我們使用的是脊樑式的結構,在脊樑蝕刻完成後,先以磁式濺鍍機長上一層SiO2薄膜以保護脊樑表面,然後再塗鋪上高分子材料 BCB(Benzocyclobutene 苯環丁烯)作為平坦化之用,再使用乾蝕刻方式將脊樑上方之BCB清除直至脊樑上方SiO2完全露出時停止,接著再利用濕蝕刻方式將脊樑上方之SiO2完全清除乾淨,最後蒸鍍上接面金屬。完成雷射製作後再將晶片切割,共振腔長度約1mm,量測其直流特性。我們同時也製作了傳統式的脊樑式雷射作為比較。 量測結果雷射啟動電流皆為32mA,平坦化雷射的雷射阻抗和啟動電壓為6.5Ω、1.3V,微分量子效率為85%。傳統樑脊式雷射的阻抗和啟動電壓為14Ω、2.1V,微分量子效率為78%。 |
Abstract |
Ridge-type 1.3μm InGaAsP diode lasers with a planar waveguide structure have been successfully demonstrated. After ridge etching, a SiO2 thin film was sputtered onto the sample as the surface passivation layer, following by the coating of Benzocyclobutene (BCB) polymer surface planarization. Before metalization, the thin polymer and SiO2 layers above the ridge were removed by dry etching and wet etching techniques. The fabrication was completed by evaporating contact metals to the samples. The cavity length of the measured laser diode is 1mm, and the threshold current of the planar laser and the ridge laser are both 32mA. The total resistance and threshold voltage of the planar device are 6.5Ω and 1.3 V. The differential quantum efficiency as large as 85% is obtained. In addition, a conventional ridge-type laser is fabricated for comparison. The total resistance and threshold voltage of conventional ridge-type device are 14Ω and 2.1V. The differential quantum efficiency is 78%. |
目次 Table of Contents |
介紹 1 第 二 章 模擬分析 4 第 三 章 元件製作 8 3-1 樑脊式雷射製程 8 3-1.1 樑脊蝕刻 8 3-1.2 表面保護與絕緣 14 3-1.3 接面金屬蒸鍍 19 3-2 平坦化雷射製程 23 3-2.1 樑脊蝕刻 23 3-2.2 平坦化 25 3-2.3 接面金屬蒸鍍 28 3-3 討論 32 第 四 章 元件特性量測 37 4-1 量測結果 37 4-2 討論 41 第 五 章 結論 42 參考文獻 |
參考文獻 References |
1. Govind P. Agrawal, and Niloy K. Dutta, “Semiconductor lasers,” Van Nostrand Reinhold, 1993. (Book) 2. R. F. Kazarinov and G. L. Belenky, “Novel Design of AlGaInAs-InP Lasers Operating at 1.3μm,” IEEE J. Quantum Electronics, Vol.31, pp.423-426, 1995. (論文) 3. C. C. Lin, K. S. Liu, M. C. Wu, and S. C. Ko and W. H. Wang, “Facet- Coating Effects on the 1.3-μm Strained Multiple-Quantum-Well AlGaInAs/InP Laser Diodes”, Jpn. J. Appl. Phys., Vol.37, No.12, pp.6399-6402, 1998. 4. C. C. Lin, M. C. Wu, H. H. Liao, and W. H. Hang, “Highly Uniform Operation of High-Performance 1.3-μm AlGaInAs-InP Monolithic Laser Arrays”, IEEE. J. Quantum Electronics, Vol.36, pp. 590-597, 2000. 5. R. J. Shul, C. T. Sullivan, and G. B. McClellan, “Anisotropic ECR etching of Benzocyclobutene,” Electronics Letters, Vol.31, No.22, pp.1919-1921, 1995. 6. Shau Jun Wu, “Fabrication and Charaterization of Planarized 0.808μm AlGaAs Diode Lasers,” Institute of Electro-Optical Engineering, Engineering, NSYSU, 2001. (論文) 7. P. Unger, P. Roentgin, G. L. Bona, “Junction-side up Operation of AlGaInP laser with very low threshold currents,” Electron. Lett., Vol.28, pp.1531-1532, 1992. 8. Haiyin Sun, “Measurement of laser diode astigmatism,” Optical Engineering, Vol.36, No.4, pp.1082-1087, 1997. 9. Govind P. Agrawal, and Niloy K. Dutta, “Semiconductor lasers,” Van Nostrand Reinhold, 1993. (Book) 10. Bor June Chen, “Fabrication and Characterization of a planar 0.67μm Diode laser with Facet Coating,” Institute of Electro-Optical Engineering, NSYSU, pp.31, 1999. (論文) 11. Keizo Takemasa, Munechika Kubota, Tsutomu Munakata, and Hiroshi Wada, “1.3-μm AlGaInAs Buried-Heterostructure Lasers,” IEEE Photonics, Technol, Letter, Vol.11, No.8, pp.949-951, 1999. 12. S. Y. Hu, D. B. Young, A. C. Gossard, L. A. Coldren, “The Effect of Lateral Leakage Current On the Experimental Gain Current Density Curve in Quantum-Well Ridge-wave-Guide Lasers,” IEEE Journal of Quantum Electronics, Vol.3, Iss.10, pp.2245-2250, 1994. 13. S. Y. Hu, S. W. Corzine, K. K. Law, D. B. Young, A. C. Gossard, L. A. Coldren, and J. L. Mertz, “Lateral Carrier Diffusion and Surface Recombination in InGaAs/AlGaAs Quantum-Well Ridge-wave-Guide Lasers,” Journal of Applied Physics, Vol.76, Iss.8, pp.4479-4487, 1994. |
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