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博碩士論文 etd-0610102-110723 詳細資訊
Title page for etd-0610102-110723
論文名稱
Title
利用平坦化製程技術製作並量測1.3um InGaAsP雷射二極體
Fabrication and Characterization of Planar 1.3um InGaAsP Diode Lasers
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
51
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2002-06-05
繳交日期
Date of Submission
2002-06-10
關鍵字
Keywords
平坦化、雷射
planar
統計
Statistics
本論文已被瀏覽 5724 次,被下載 6005
The thesis/dissertation has been browsed 5724 times, has been downloaded 6005 times.
中文摘要
本篇論文主要是利用平坦化製程技術,製作1.3μm 雷射二極體。我們使用的是脊樑式的結構,在脊樑蝕刻完成後,先以磁式濺鍍機長上一層SiO2薄膜以保護脊樑表面,然後再塗鋪上高分子材料 BCB(Benzocyclobutene 苯環丁烯)作為平坦化之用,再使用乾蝕刻方式將脊樑上方之BCB清除直至脊樑上方SiO2完全露出時停止,接著再利用濕蝕刻方式將脊樑上方之SiO2完全清除乾淨,最後蒸鍍上接面金屬。完成雷射製作後再將晶片切割,共振腔長度約1mm,量測其直流特性。我們同時也製作了傳統式的脊樑式雷射作為比較。
量測結果雷射啟動電流皆為32mA,平坦化雷射的雷射阻抗和啟動電壓為6.5Ω、1.3V,微分量子效率為85%。傳統樑脊式雷射的阻抗和啟動電壓為14Ω、2.1V,微分量子效率為78%。
Abstract
Ridge-type 1.3μm InGaAsP diode lasers with a planar waveguide

structure have been successfully demonstrated. After ridge etching, a

SiO2 thin film was sputtered onto the sample as the surface passivation

layer, following by the coating of Benzocyclobutene (BCB) polymer

surface planarization. Before metalization, the thin polymer

and SiO2 layers above the ridge were removed by dry etching and wet

etching techniques. The fabrication was completed by evaporating

contact metals to the samples.

The cavity length of the measured laser diode is 1mm, and the

threshold current of the planar laser and the ridge laser are both

32mA. The total resistance and threshold voltage of the planar device

are 6.5Ω and 1.3 V. The differential quantum efficiency as large as

85% is obtained. In addition, a conventional ridge-type laser is

fabricated for comparison. The total resistance and threshold voltage

of conventional ridge-type device are 14Ω and 2.1V. The differential

quantum efficiency is 78%.
目次 Table of Contents
介紹 1
第 二 章 模擬分析 4
第 三 章 元件製作 8
3-1 樑脊式雷射製程 8
3-1.1 樑脊蝕刻 8
3-1.2 表面保護與絕緣 14
3-1.3 接面金屬蒸鍍 19
3-2 平坦化雷射製程 23
3-2.1 樑脊蝕刻 23
3-2.2 平坦化 25
3-2.3 接面金屬蒸鍍 28
3-3 討論 32
第 四 章 元件特性量測 37
4-1 量測結果 37
4-2 討論 41
第 五 章 結論 42

參考文獻
參考文獻 References
1. Govind P. Agrawal, and Niloy K. Dutta, “Semiconductor lasers,” Van Nostrand Reinhold, 1993. (Book)
2. R. F. Kazarinov and G. L. Belenky, “Novel Design of AlGaInAs-InP Lasers Operating at 1.3μm,” IEEE J. Quantum Electronics, Vol.31, pp.423-426, 1995. (論文)
3. C. C. Lin, K. S. Liu, M. C. Wu, and S. C. Ko and W. H. Wang, “Facet- Coating Effects on the 1.3-μm Strained Multiple-Quantum-Well AlGaInAs/InP Laser Diodes”, Jpn. J. Appl. Phys., Vol.37, No.12, pp.6399-6402, 1998.
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6. Shau Jun Wu, “Fabrication and Charaterization of Planarized 0.808μm AlGaAs Diode Lasers,” Institute of Electro-Optical Engineering, Engineering, NSYSU, 2001. (論文)
7. P. Unger, P. Roentgin, G. L. Bona, “Junction-side up Operation of AlGaInP laser with very low threshold currents,” Electron. Lett., Vol.28, pp.1531-1532, 1992.
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9. Govind P. Agrawal, and Niloy K. Dutta, “Semiconductor lasers,” Van Nostrand Reinhold, 1993. (Book)
10. Bor June Chen, “Fabrication and Characterization of a planar 0.67μm Diode laser with Facet Coating,” Institute of Electro-Optical Engineering, NSYSU, pp.31, 1999. (論文)
11. Keizo Takemasa, Munechika Kubota, Tsutomu Munakata, and Hiroshi Wada, “1.3-μm AlGaInAs Buried-Heterostructure Lasers,” IEEE Photonics, Technol, Letter, Vol.11, No.8, pp.949-951, 1999.
12. S. Y. Hu, D. B. Young, A. C. Gossard, L. A. Coldren, “The Effect of Lateral Leakage Current On the Experimental Gain Current Density Curve in Quantum-Well Ridge-wave-Guide Lasers,” IEEE Journal of Quantum Electronics, Vol.3, Iss.10, pp.2245-2250, 1994.
13. S. Y. Hu, S. W. Corzine, K. K. Law, D. B. Young, A. C. Gossard, L. A. Coldren, and J. L. Mertz, “Lateral Carrier Diffusion and Surface Recombination in InGaAs/AlGaAs Quantum-Well Ridge-wave-Guide Lasers,” Journal of Applied Physics, Vol.76, Iss.8, pp.4479-4487, 1994.
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