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論文名稱 Title |
由光調制反射光譜研究s-i-n+砷化鎵的E0+Δ0躍遷與溫度關係
The dependence of E0+Δ0 transition on temperature by photoreflectance spectroscopy of surface-intrinsic-n+ GaAs |
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系所名稱 Department |
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畢業學年期 Year, semester |
語文別 Language |
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學位類別 Degree |
頁數 Number of pages |
58 |
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研究生 Author |
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指導教授 Advisor |
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召集委員 Convenor |
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口試委員 Advisory Committee |
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口試日期 Date of Exam |
2003-06-11 |
繳交日期 Date of Submission |
2003-06-13 |
關鍵字 Keywords |
調制光譜,光調制,反射光譜 GaAs, FKO, s-i-n+, PR |
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統計 Statistics |
本論文已被瀏覽 5713 次,被下載 3978 次 The thesis/dissertation has been browsed 5713 times, has been downloaded 3978 times. |
中文摘要 |
本文是將s-i-n+結構的GaAs在不同溫度下作PR實驗,藉以求得E0+Δ0躍遷能量隨溫度的變化。PR光譜中,當探測能量大於能隙時得到許多FKO (Franz-Keldysh oscillation),利用FKO的震盪週期分析,進而約略得到躍遷能量的大小與電場,並且由表面電場與溫度的關係我們可以求得表面費米能階。 |
Abstract |
Photoreflectance (PR) of surface-intrinsic-n+ type GaAs has been measured for various temperatures, then we can get the energy of E0+Δ0 transition in various temperatures. The spectra exhibited many Franz-Keldysh oscillations, when probe beam’s energy is larger than energy gap. Electric field (F) and transition energy can be determined from analyzing the Franz-Keldysh oscillation. Further more we can get the surface’s Fermi level from the dependence of surface’s electric field (Fs) on temperature (T). |
目次 Table of Contents |
第一章 簡介與相關理論1 1-1簡介1 1-2鍵結4 1-3能帶5 1-3-1導帶與價帶5 1-3-2有效質量7 第二章 調制光譜9 2-1調制光譜學的機制9 2-2電子躍遷理論12 2-3介電函數與反射率的關係15 2-4電場調制21 2-4-1低電場調制21 2-4-2中電場調制23 2-5數據分析29 2-5-1 Airy function漸進式29 2-5-2複利葉轉換30 第三章 實驗32 3-1樣品s-i-n+結構32 3-2 GaAs的能帶結構34 3-3實驗裝置36 3-4實驗原理與調制原理39 第四章 結果分析與討論43 4-1 FKO與複利葉轉換分析43 4-2溫度的影響46 第五章 結論56 參考文獻57 |
參考文獻 References |
(1) M. Cardona, In Modulation Spectroscopy (Academic, NewYork, 1969) (2) D. E. Aspones, in Handbook on Semiconductor, edited by T. S. Moss (North-Holland, New York, 1994), Vol. 2, P. 109 (3) F. H. Polak, in Handbook on Semiconductor, edited by M. Balkanski (North-Holland, New York, 1994) (4) H. Shen and M. Dutta, J. Appl. Phys. 78, 2151 (1995) (5) R. N. Bhattacharya, H. Shen, P. Parayanthal, and F.H. Pollak, Phys. Rev. B 37, 4044 (1988) (6) D. E. Aspnes, Phys. Rev. 147, 554(1966) (7) P. Lautenschlager, M. Garriga, S. Logothetidis, and M.Cardona, Phys. Rev. B35, 9174 (1987) (8) D. P. Wang and C. T. Chen, J. Appl. Phys. 79, 7183 (1996) (9) Meléndez-Lira, S. Jiménez-Sandoval, M. López-López, and I. Hernández-Calderón, J. Appl. Phys. 76, 3616 (1994) (10) S. M. Sze, Semiconductor devices, physics and technology (New York, Wiley, 2002) (11) H. Shen, M. Dutta, R. Lux, W. Buchwald, and L.Fotiadis, AppL. Phys. Lett. 59, 321 (1991) (12) C. Kittel, Introduction to Solid State Physics (New York, Wiley, 1996) (13) C. Hamaguchi, Basic Semiconductor Physics (Heidelbererg, springer, 2001) (14) B. O. Seraphin and N. Bootka, J. Appl. Phys. 145, 628 (1996) (15) D. E. Aspnes, A. A. Studna, Phys. Rev. B27, 985 (1983) (16) P. Y. Yu and M. Cardona, Fundamentals of Semiconductors: Physics and Materials Properties (New York, 1996, springer) (17) Ming-Fu Li, Modern Semiconductor Quantum Physics (1994) (18) D. E. Aspnes, A. A. Studna, Phys. Rev. B7, 4605 (1973) (19) D. E. Aspnes, Phys. Rev. 166, 921 (1968) (20) X. Yin, H-M. Chen, F. H. Pollak, Y. Chan, and P. A. Montano, Appl. Phys. Lett. 58, 21 (1991) (21) J. S. Blakemore, J. Appl. Phys. 53, 123 (1982) (22) Y. P. Varshni, Physica 34, 149 (1967) (23) M. Hecht, Phys. Rev. B41, 12299 (1990) (24) M. Hecht, Phys. Rev. B41, 7918 (1990) (25) X. Yin, H.-M. Chen, F. H. Pollak, Y. Chan, P. A. Montano, P. D. kirchner, G. D. Pettit, and J. M. Woodall, J. Vac. Sci. Technol. B 9, 2114 (1991) (26) T. M. Hsu, Y. C. Tien, N. H. Lu, S. P. Tsai, D. G. Liu, and C. P. Lee, J. Appl. Phys. 72, 1065 (1992) (27) W. Y. Lee, J. Y. Chien, and D. P. Wang, J. Appl. Phys. 91, 4101 (2002) (28) Peng Jin and S. H. Pan, J. Appl. Phys. 88, 6429 (2000) (29) K. M. Huang, K. L. Wang, and D. P. Wang, Appl. Phys. Lett. 71, 3889 (1997) |
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