本論文目的是利用磁式濺鍍機，在玻璃基板上成長ITO薄膜，並探討此薄膜在不同製程條件下，電性與光性的改變情形。我們會改變輸入功率、操作壓力、基板溫度，並觀察這些參數對薄膜的結晶性、透光性、電阻率(sheet resistance)的影響，並找出最佳的導電性以及透光率。
在ITO材料成長的製程中，首先我們在常溫下改變輸入功率，操作壓力不變，當找到電阻率最低的條件之後，再固定輸入功率及溫度，只調整操作壓力。此時在常溫下所得到最低的電阻率約為35 Ω/□。在XRD分析中，其為非結晶的情形。
接著固定輸入功率及操作壓力，而只改變基板溫度。當基板溫度升至400度時，電阻值已可以達到6.98 Ω/□，在XRD分析中，可看見(211)、(222)、(400)、(440)的方向最為明顯。在高溫下(300 ℃)改變輸入功率和操作壓力時，其電阻率並無明顯的改變，在透光率以及XRD部份，可以看見它的變化。本實驗所成長的ITO薄膜，其透光率在可見光(400 nm~800 nm)範圍有65 % ~ 90 %的穿透量。

Indium tin oxide (ITO) films were deposited onto the glass substrate by rf reactive magnetron sputtering method. Deposition was performed by changing processing conditions, such as rf power, process pressure and substrate temperature. The structural, optical and electrical properties of ITO films have been characterized by X-ray diffraction, optical transmittance and sheet resistance.

In the process of ITO deposition, we change rf power and fix process pressure at room temperature. And we change process pressure after finding low sheet resistance by changing rf power at room temperature. The low sheet resistance of 35 Ω/□ was obtained at room temperature.

In addition, we change the substrate temperature while keeping the same rf power and process pressure. When the temperature is 400℃, the sheet resistance as low as 6.98 Ω/□ was obtained. The diffraction peaks on (211), (222), (400), and (440) directions were observed by XRD analysis. Under high temperature (300℃) deposition the transmittance and diffraction peaks of the films were found to change with different rf power and process pressure. However, the sheet resistances are about the same during the interest for both rf power and process pressure. The UV-visible spectra indicate that the optical transmittance of all the films is between 65 % ~ 90 % at visible range.

第一章 導論 1
第二章 實驗步驟與儀器介紹 5
2-1實驗步驟和鍍膜參數 5
2-1-1 實驗步驟 5
2-1-2 鍍膜參數 6
2-2 材料與磁式濺鍍機介紹 7
2-2-1 基板 7
2-2-2靶材 8
2-3 濺鍍機示意圖 9
2-4 量測儀器介紹 10
2-4-1 四點探針 (4-point probe) 10
2-4-2 紫外光/可見光光譜儀 (UV-visible spectrophotometer) 11
2-4-3 X光繞射圖 (XRD) 12
2-4-4 橢圓偏光儀 (Ellipsometer) 14
第三章 實驗結果 16
3-1 玻璃-二氧化矽-ITO 16
3-1-1 功率 16
3-1-1.1 電阻率和成長速率 17
3-1-1.2表面粗糙度(Roughness) 17
3-1-1.3 UV-visible 18
3-1-1.4 XRD 19
3-1-2 壓力 20
3-1-2.1 電阻率和成長速率 20
3-1-2.2表面粗糙度(Roughness) 21
3-1-2.3 UV-visible 21
3-1-2.4 XRD 22
3-1-3 溫度 23
3-1-3.1 電阻率和成長速率 23
3-1-3.2表面粗糙度(Roughness) 24
3-1-3.3 UV-visible 24
3-1-3.4 XRD 25
3-2 玻璃-ITO 27
3-2-1 溫度 27
3-2-1.1 電阻率和成長速率 27
3-2-1.2表面粗糙度(Roughness) 28
3-2-1.3 UV-visible 29
3-2-1.4 XRD 29
3-2-1.5 Index 30
3-2-2 在300℃下改變功率 31
3-2-2.1 電阻率和成長速率 32
3-2-2.2表面粗糙度(Roughness) 32
3-2-2.3 UV-visible 33
3-2-2.4 XRD 34
3-2-2.5 Index 35
3-2-3 在高溫下改變操作壓力 36
3-2-3.1 電阻率和成長速率 36
3-2-3.2表面粗糙度(Roughness) 37
3-2-3.3 UV-visible 37
3-2-3.4 XRD 38
3-2-3.5 Index 39
3-3 與商業用的ITO膜比較 40
第四章 總結 42

1. E. Kaneko, Liquid Crystal Display, KTK Scientific, Tokyo,1987.
2. D. Dimos, W.L.Warren, M.B. Sinclair, B.A. Tuttle, R.W. Schwartz, J. Appl. Phys. 76 (1994) 4305.
3. K. Sreenivas, J.Sudersena Rao, A. Mansingh, S. Chanadra, J.Appl. Phys. 57 (1985) 384.
4. H. Kobayashi, T. Ishida, K. Nakamura, Y. Nakato, H. Tsubomura, J. Appl. Phys. 72 (1992) 5288.
5. I.A. Rauf, J. Appl. Phys. 79(8),15 April (1996) 4057-4065
6. Y. Djaoued, VuHong Phong, S. Badilescu, P.V. Ashrit, Fernand E. Girouard, Vo-Van Truong, Thin Solid Films 293 (1997) 108-112.
7. Swon-soon Kim, Sw-Young Choi, Chan-Gyung Park, Hyeon-Woo Jin, Thin Solid Films 347 (1999) 108-112.
8. Jian Liu, E. Radlein, G.H. Frischat, Phys. Chem. Glasses 40 (5) (1999) 277-281
9. C.H. Lee, C.S. Huang, Materials Science and Engineering B22 (1994) 233-240.
10. E. Benamar, M. Rami, C. Messaoudi, D. Sayah, A. Ennaoui, Solar Cells 43 (1996) 37-45.
11. W. Wu, B. Chiou, Appl. Surf. Sci. 68 (1993) 497.
12. C. Choi, K. No, W. Lee, H. Kim, S. Jung, W. Lee, W. Kim, S. Kim, C. Yoon, Thin Solid Films 258 (1995) 274.
13. T.J. Vink, W.Walrave, J.L.C. Daams, P.C. Baarslag, J.E.A.M. van den Meerakker, Thin Solid Films 266 (1995) 145.
14. T. Maruyama, K. Fukui, J. Appl. Phys.70 (1999) 3848.
15. 洪家健，中山大學材料所碩士論文，以超音波霧化法製備錫摻雜氧化銦薄膜之光電特性 (2002).
16. Yeon Sik Jung, Sung Soo Lee, J. Crystal Growth 259 (2003) 343-351.
17. Ch. Sujatha, G. Mohan Rao, S. Uthanna, Materials Science and Engineering B94 (2002) 106-110.
18. Li-jian Meng, M.P. dos Santos, Thin Solid Films 322 (1998) 56-62.
19. Masayuki Kamei, Teruyuki Yagami, Satoru Takaki, Yuzo Shigesato, Applied Physics Letter 64 (20) (1994) 2712-2714.
20. E. Benamar, M. Rami, C. Messaoudi, D. Sayah, A. Ennaoui, Solar Energy Materials and Solar Cells 56 (1999) 125-139.
21. H. Bisht, H. T. Eun, a. Mehrtens, M.A. Aegerter, Thin Solid Films 351 (1999) 109-114.
22. S.K.So, W.K.Choi, C.H.Cheng, L.M.Leung, C.F.Kwong, J. Appl.Phys.A 68, 447-450 (1999).