在本論文中，我們利用鉍系拓樸絕緣體作為飽和吸收體探討了實現高效率高功率固態脈衝雷射的可能性。首先，我們討論水熱剝離法流程和剝離後樣品的SEM、TEM、AFM和XRD等實驗分析，證實奈米尺寸下飽和吸收體製備方式的優良與可行性；其次，利用製備好的碲化鉍樣品實作被動Q開關脈衝雷射，並採用折疊共振腔體方式濾掉多餘的泵浦光源達到穩定的Q開關脈衝輸出，實現在1.0微米波長中最高超過五個微焦脈衝能量，這是利用拓樸絕緣體作為飽和吸收體之脈衝雷射中最大脈衝能量輸出；最後，藉由不同腔體設計的改良，分別去比較1.06和1.34 µm波段下不同覆蓋率的雷射最佳優化結果，其中1.34 µm波段下我們實現了輸出功率326 mW、脈衝能量2.8 µJ和脈寬小於微秒到673 ns的雷射輸出，這也是該波段最大的平均輸出功率結果；此外，並首度報導熱效應在腔內對飽和吸收體的影響，利用光學矩陣模擬腔內的光班行進方式並透過提高光班面積大小後，讓越多的拓樸絕緣體能做貢獻進而增大脈衝能量和功率，而我們更發現拓樸絕緣體的低飽和吸收特性下伴隨著泵浦功率提高會導致重複率劇烈上升，且拓樸絕緣體本身也為快飽和吸收體，綜合上述現象會使泵浦功率提高到一定程度會使Q開關脈衝會呈現CW狀態。

In this thesis, the characteristics of high power solid-state pulsed laser by using topological insulator Bi2Te3 saturable absorber were investigated. First, the high yield of Bi2Te3 nanosheets were successfully fabricated by hydrothermal exfoliation, which had been certificated with X-ray diffraction, raman spectrum characterizations, energy-dispersive X-ray spectroscopy, atomic force microscopy, scanning electron microscopy, and transmission electron microscopy. All the results confirms anvantanges and feasibility of convient route for producing saturable absorber. This is beneficial to further commercial solid-state laser applications.
In addition, we demonstarted passive solid-state pulsed laser by exfoliated topological insulators Bi2Te3 and reliazed stable Q-switching operation by folded resonator in order to prevent residual pumping power. The obtained pulse energy is over than 5 μJ at 1.06 µm. This is the greatest value in TI-based solid-state laser to our best knowledgement. Finally, by virtue of improved resonator, the optimized Q-switching performances compare favorably with different coverage of saturable absorber at 1.06 µm and 1.34 µm. We have experimentally demonstrated that output power of 326 mW、pulse energy of 2.8 μJ and pulse duration of 673 ns at 1.34 µm waveband. Furthermore, we have displayed the influence of thermal effect on saturable absorber within resonator for the first time. By analysing the analogue process of beam waist and transforming the position of saturable saturaber within resonator, it will reach the higher pulse power and energy on account of contributions to more topological insulators. Moreover, we oberserved that low threshold characteristics of topological insulators as fast saturable absorber accompanied with increasing pumping power would lead to excessively high repetition rate. Above following discussion, Q-switching pulsed operation would convert into condition of continuous wave when it raised up to certain level of pumping power

中文審定書．．．．．．．．．．．．．．．．．．．．．．．．．．．．i
英文審定書．．．．．．．．．．．．．．．．．．．．．．．．．．． ii
誌謝 ．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．iii
摘要．．．．．．．．．．．．．．．．．．．．．．．．．．．．．． v
Abstract ．．．．．．．．．．．．．．．．．．．．．．．．．．．． vi
目錄 ．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．viii
圖次 ．．．．．．．．．．．．．．．．．．．．．．．．．．．．．． x
表次 ．．．．．．．．．．．．．．．．．．．．．．．．．．．．．． xiii
第一章 緒論．．．．．．．．．．．．．．．．．．．．．．．．．．．1
1.1. 前言．．．．．．．．．．．．．．．．．．．．．．．．．．．1
1.2. 研究動機．．．．．．．．．．．．．．．．．．．．．．．．．2
1.3. 論文架構．．．．．．．．．．．．．．．．．．．．．．．．．3
第二章 拓樸絕緣體的光學特性與可飽和吸收體製備．．．．．．．．．．4
2.1. 拓樸絕緣體．．．．．．．．．．．．．．．．．．．．．．．．4
2.1.1. 拓樸絕緣體之概述．．．．．．．．．．．．．．．．．．．．．4
2.1.2. 能帶結構．．．．．．．．．．．．．．．．．．．．．．．．．7
2.1.3. 二維電子氣拓樸絕緣體-碲化鉍的原子結構及應用．．．．．．．．9
2.2. 拓樸絕緣體的非線性飽和吸收特性．．．．．．．．．．．．．．12
2.2.1. 對光波段吸收特性．．．．．．．．．．．．．．．．．．．．．12
2.2.2. 非線性飽和吸收機制．．．．．．．．．．．．．．．．．．．．14
2.2.3. 調制深度、飽和光強度和通量．．．．．．．．．．．．．．．．17
2.3. 熱損傷閾值．．．．．．．．．．．．．．．．．．．．．．．．19
2.4. 碲化鉍飽和吸收體的製備．．．．．．．．．．．．．．．．．．21
第三章 拓樸絕緣體奈米薄片的水熱剝離法製備與特性之研究．．．．．．25
3.1. 樣品製備流程．．．．．．．．．．．．．．．．．．．．．．．25
3.2. 拓樸絕緣體的掃描式和穿透式電子顯微鏡分析．．．．．．．．．29
3.2.1. 實驗樣品條件與參數．．．．．．．．．．．．．．．．．．．．29
3.2.2. 實驗結果與分析．．．．．．．．．．．．．．．．．．．．．．31
3.3. 拓樸絕緣體碲化鉍的X射線繞射譜與拉曼光譜分析．．．．．．．37
3.4. 不同過濾方式下的樣品尺寸大小分析．．．．．．．．．．．．．39
3.5. 總結．．．．．．．．．．．．．．．．．．．．．．．．．．．41
第四章 奈米薄片拓樸絕緣體碲化鉍之Q開關雷射特性和共振腔體改良．．42
4.1. 固態雷射共振腔體原理和設計．．．．．．．．．．．．．．．．42
4.2. 固態雷射折疊共振腔體穩態出光和優化．．．．．．．．．．．．45
4.3. 1.06µm下Q開關雷射實驗研究．．．．．．．．．．．．．．．．52
4.3.1. 實驗樣品條件與參數．．．．．．．．．．．．．．．．．．．．52
4.3.2. 實驗結果與分析．．．．．．．．．．．．．．．．．．．．．．55
4.4. 總結．．．．．．．．．．．．．．．．．．．．．．．．．．．59
第五章 碲化鉍旋塗製備法之覆蓋率對非特性可飽和吸收研究和Q開關雷射的優化．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．60
5.1. 飽和吸收體非線性吸收特性之覆蓋率影響雷射的機制．．．．．．60
5.2. 不同覆蓋率下碲化鉍對非線性可飽和吸收特性趨勢的影響．．．．62
5.2.1. 實驗樣品條件與參數．．．．．．．．．．．．．．．．．．．．62
5.2.2. 實驗結果與分析．．．．．．．．．．．．．．．．．．．．．．63
5.3. 1.06 µm波段不同覆蓋率下的Q開關雷射實驗研究．．．．．．．．65
5.3.1. 實驗樣品條件與參數．．．．．．．．．．．．．．．．．．．．65
5.3.2. 實驗結果與分析．．．．．．．．．．．．．．．．．．．．．．66
5.4. 1.34 µm波段不同覆蓋率下的Q開關雷射實驗研究．．．．．．．．71
5.4.1. 實驗樣品條件與參數．．．．．．．．．．．．．．．．．．．．71
5.4.2. 實驗結果與分析．．．．．．．．．．．．．．．．．．．．．．72
5.5. 折疊共振腔內不同位置下熱效應對飽和吸收體的影響．．．．．．74
5.5.1. 實驗結果與分析．．．．．．．．．．．．．．．．．．．．．．74
5.6. 總結．．．．．．．．．．．．．．．．．．．．．．．．．．．77
第六章 結論與未來展望．．．．．．．．．．．．．．．．．．．．．．79
參考文獻．．．．．．．．．．．．．．．．．．．．．．．．．．．．80

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