在本論文中主要探討用Czochralski提拉法長出適合作為GaN磊晶基材的鋁酸鋰晶體，並找出最好的拋光方法。
鋁酸鋰晶體主要是用碳酸鋰和氧化鋁混合放入銥金坩鍋中，置入Czochralski的爐子中後在氮氣的環境下升溫並開始長晶，在長晶過程中必須控制熱場、轉速和拉速以確保晶體的完整性及具有良好的品質。
在進行GaN磊晶前基材必須先拋光，提升GaN的品質，所以鋁酸鋰晶體之拋光方法是極為重要的一個步驟，拋光過程可藉由不同粗細度之砂紙、不同顆粒之氧化鋁粉末分別與去離子水混合、及二氧化矽懸浮液體，分別於鋁酸鋰晶體之表面進行拋光，最後在室溫條件下浸泡於酸溶液中，得到低於1.0nm均方根（rms）以下之表面平均粗糙度。

In this thesis, we grew the LiAlO2 single crystals was grown by Czochralski method and determined the best polishing process.
The raw materials of growing LiAlO2 are Li2CO3 and Al2O3. After mixing these two powders, they are put into an Ir crucible and heat it up with RF generator in N2 environment. We tried to use the optimized rotation rate and pull rate in the growth process to ensure the shape of the crystal to be uniform and having the good quality.
Before the epitaxy of GaN, the substrate must be polished to improve GaN quality. The (100) surface of LiAlO2 was polished by using various particle size of SiC sandpapers, de-ion water mixed with Al2O3 powders, and colloidal SiO2 suspension. Finally, the LiAlO2 specimen is soaked into an acid solution for etching at room temperature to obtain a smooth surface. The results show a roughness below 1.0 nm rms.

致 謝 I
摘 要 II
Abstract III
目 錄 IV
表目錄 VI
圖目錄 VII
導 論 1
文獻回顧 4
2.1實驗目的 4
2.2氮化鎵基材 4
2.3鋁酸鋰的結構與性質 9
2.4粗糙度 14
2.5氧化鋁與鋰化物之反應 15
2.6 Czochralski提拉法 16
實驗步驟及分析 19
3.1實驗步驟 19
3.2實驗分析儀器 23
結果與討論 24
4.1 CZ提拉法生長LiAlO2晶體 24
4.2 原子力顯微鏡觀測結果 31
4.3 光學顯微鏡觀測結果 38
4.4 X-ray繞射儀量測結果 40
4.5 微熱差分析儀量測結果 43
4.6 硬度量測結果 43
結 論 45
參考文獻 46

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