本實驗使用PPMS研究拓樸絕緣體Sb2SeTe2於低溫高磁場下，發生量子化週期性振盪Shubnikov-de Haas Oscillation，簡稱SdH Oscillation之現象，其霍爾效應(Hall effect)量測結果顯示載子為電洞，藉由量測並分析拓樸絕緣體週期性振盪，得到拓樸絕緣體Sb2SeTe2表面載子濃度(carrier concentration)與載子遷移率(carrier mobility)，Landau-level fan diagram中得到Berry phase為0.46，證明該載子為狄拉克費米子(Dirac fermion)，根據半古典理論Lifshitz-Kosevich formula，推導出其載子有效質量(effective mass)為0.17個電子質量，由振盪週期中所提取出的費米波數(Fermi wave vector)

The Shubnikov-de Haas (SdH) oscillation is measured in the topological insulator Sb2SeTe2. Hall effect measurements demonstrate the carrier is hole. Following the Landau-level fan diagram, the Berry phase, β=0.46, that indicated the oscillation is from surface state. The Lifshitz-Kosevich formula supports that effective mass of the transport carrier is 0.17me. The extracted the Fermi wave vector kf = 7.9×10^8 m^(-1) that is consistent with the result of ARPES, kf=7.5×10^8 m^(-1).

目錄
論文審定書...............................................................................................................i
摘要........................................................................................................................ii
Abstract..................................................................................................................iii
目錄.......................................................................................................................iv
圖次.......................................................................................................................vi
第一章 簡介......................................................................................................1
1-1 前言...............................................................................................................1
1-2 動機...............................................................................................................2
第二章 基本理論................................................................................................3
2-1 拓樸絕緣體(topological insulator).......................................................................3
2-2 Berry phase....................................................................................................5
2-3 藍道能階(Landau level)....................................................................................6
2-4 霍爾效應(Hall effect)........................................................................................7
2-5 量子霍爾效應(Quantum Hall effect)...................................................................8
2-6 自旋量子霍爾效應(Quantum spin Hall effect)......................................................9
2-7 Shubnikov-de Haas振盪效應............................................................................10
第三章 樣品製備與儀器介紹..............................................................................12
3-1 樣品製備.......................................................................................................12
3-2 量測系統與方法.............................................................................................13
3-2-1 物理性質量測系統...................................................................................13
3-2-2 量測方法................................................................................................17
第四章 實驗結果與討論.....................................................................................18
4-1 實驗架構.......................................................................................................18
4-2 結果與討論....................................................................................................19
4-2-1 剩餘電阻比............................................................................................19
4-2-2 霍爾量測................................................................................................20
4-2-3 SdH振盪 - Onsager relation.....................................................................21
4-2-4 SdH振盪 - Berry phase...........................................................................24
4-2-5 SdH振盪 - Lifshitz Kosevich theory..........................................................25
第五章 結論.....................................................................................................28
參考文獻................................................................................................................29

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