本研究利用原子層沉積系統 (ALD) 沉積氧化鋁和氧化鈦薄膜於磷化銦基板上，作為蕭特基穿隧能障金氧半場效電晶體元件 (Schottky tunneling barrier MOSFET) 之閘極氧化層。首先，對於現有氧化鈦薄膜做品質改善的研究，使用原子沉積法的氧化鈦與氧化鋁的雙層結構來改善單層氧化鈦氧化層。使用雙層結構可藉由氧化鋁自我清潔能力使得氧化層與基板界面得到更佳的改善，使漏電流數值降至1.49 × 10-8 和 2.03 × 10-6 A/cm2 at ± 2 MV/cm。為了使介面能有更好的特性，我們使用硫化銨溶液減少在基板表面上的原生氧化層來達到提高特性。因此蕭特基能障才能免予費米能接釘札影響。另外，為了提高汲極電流及降低在汲極與源極的接觸電阻。分別研究三種加了介電層結構的蕭特基穿隧二極體來作為汲極與源極區域，在這三種結構中發現加了氧化鋁與氧化鈦雙層結構在逆向偏壓下電流來的最大，其電流為7.27 mA/cm2，且比單純是金半接面的蕭特基二極體的電流來的大許多。另外發現加了氧化鋁與氧化鈦雙層結構能有效降低接觸電阻，與金半結構的接觸電阻比較小了五個等級，關於蕭特基穿隧能障金氧半場效電晶體元件的電性量測，其汲極電流為 30.2 A/m在汲極電壓3伏閘極電壓3伏時。而在汲極電流-汲極電壓特性圖中的線性區，可以看到由於接觸電阻降低其次臨界擺幅變小，轉導值為 10 mS/mm，移動率為3770 mm2/V-s 。比較蕭特基穿隧能障金氧半場效電晶體與蕭特基能障金氧半場效電晶體，在特性上最大的差異在於蕭特基穿隧能障金氧半場效電晶體降低了接觸電阻進而提高了汲極電流，相對的轉導與載子移動也隨著提高。

In this study, the thin titanium oxide (TiO2) film and aluminum oxide (Al2O3) films which was used as gate oxides of InP Schottky tunneling barrier MOSFET were deposited on InP substrate that was prepared by atomic layer deposition (ALD). First, we made of improvement quality for existing titanium oxides, using double stack of titanium oxide (TiO2) and aluminum oxide (Al2O3) by ALD can be used to improve single layer of TiO2. Al2O3 of ALD has self-cleaning which could improve interface quality between oxide and substrate, the leakage current densities can reach 3.1 × 10-9 and 3.3 × 10-7 A/cm2 at ± 2 MV/cm. In order to having good quality of interface, the (NH4)2S solution is a good method to reduce surface native oxide on InP. Therefore, Schottky barrier will not be influenced by Fermi level pinning with fewer native oxide. Otherwise, improvement of drain current and reduction of contact resistance in source/drain regions are our purposes. So, we investigate three structures of Schottky tunneling barrier diodes by inserting dielectrics as source/drain regions. From my experiments can be found the double layers of Al2O3/TiO2 has the highest current which is 7.27 mA/cm2 at reverse bias in these three structures. The current of double layer dielectrics Schottky tunneling barrier diode is higher than general Schottky diode (Al/InP) for five orders. The contact resistance in double dielectrics layers is the lowest in four structures. For the electrical measurements, the transconductance and mobility are 10 mS/mm and 3770 mm2/V-s, respectively. It has low subthreshold swing in ID-VG linear region. Compare Schottky barrier MOSFET and Schottky tunneling barrier MOSFET, the most difference is the contact resistance remarkable reduction and improvement of drain current. Therefore, the transconductance and the mobillty are remarkable improvement.

ACKNOWLEDGMENT.........................................II
中文摘要 ........................................III
ABSTRACT ........................................IV
CONTENTS ........................................VI
LIST OF FIGURES........................................IX
LIST OF TABLES ........................................XIV
Chapter 1 Introduction ........................................1
1-1 Developments in gate dielectric ........................................1
1-2 Properties of TiO2 ........................................3
1-3 Comparison of deposition methods of TiO2........................................4
1-4 Advantages of ALD........................................5
1-5 Drawback of TiO2 for MOSFETs ........................................6
1-6 Drawbacks of SB on III-V compound semiconductors........................................7
1-7 Mechanism and the structure model of InP with sulfur treatment........................................10
1-8 Properties of Al2O3........................................10
1-9 ALD-TiO2/Al2O3 on (NH4)2S treated III-V compound semiconductor structure........................................11
1-10 Principle of Schottky tunneling barrier........................................14
1-11 III-V Schottky tunneling barrier MOSFET........................................14
1-11-1 Operation principle for the n-STBMOSFET in channel........................................16
Chapter 2 Experiments........................................29
2-1 Al2O3 and TiO2 are prepared by ALD........................................29
2-1-1 CVD principle........................................29
2-1-2 Deposition system of ALD ........................................30
2-1-3 Properties of source materials ........................................31
2-2 Structure procedures and film depositions ........................................32
2-2-1 III-V wafer cleaning and sulfidation procedures........................................32
2-2-2 Preparation of Al2O3/TiO2 stack films........................................33
2-2-2-1 Growth parameters of ALD-TiO2 film........................................33
2-2-2-2 Growth parameters of ALD-Al2O3 film ........................................33
2-2-3 Al metal and In-Zn alloy cleaning processes........................................33
2-2-4 Electrodes fabrication........................................34
2-2-5 Preparations of Al/Al2O3/InP Schottky tunneling barrier diode with (NH4)2S treatment........................................34
2-2-6 Preparations of Al/TiO2/InP Schottky tunneling barrier diode with (NH4)2S treatment........................................35
2-2-7 Preparations of Al/Al2O3/TiO2/InP Schottky tunneling barrier diode with (NH4)2S treatment 35
2-3 Characterization........................................36
2-3-1 Physical properties........................................36
Chapter 3 MOS with Various Gate Structures Characteristics of ALD-TiO2 and ALD-TiO2/Al2O3 on S-InP........................................50
3-1 TEM cross section of TiO2/Al2O3/S-InP structure........................................50
3-2 I-V characteristics of TiO2/Al2O3 stacked dielectrics on (NH4)2S treated on InP ........................................50
3-3 C-V characteristics of Al2O3/TiO2 stacked dielectrics on (NH4)2S treated on InP........................................51
3-4 Tentative conclusion........................................53
Chapter 4 Characteristics of Source/Drain in Schottky Tunneling Barrier Diodes........................................58
4-1 Electrical characteristics of Al/S-InP diode ........................................58
4-2 Electrical characteristics of Al/Al2O3/S-InP diode........................................58
4-3 Electrical characteristics of Al/TiO2/S-InP diode........................................60
4-4 Electrical characteristics of Al/Al2O3/TiO2/S-InP diode........................................61
4-5 Electrical characteristics of contact resistance with Schottky tunneling barrier oxides ........................................62
4-6 Tentative conclusion 63
Chapter 5 Electrical Characteristics of Enhancement-mode n-Channel InP Schottky Tunneling Barrier MOSFET 84
5-1 Fabrication process of enhancement-mode n-channel Schottky tunneling barrier MOSFET with ALD- TiO2 /Al2O3 as gate oxides on S-InP........................................84
5-2 Electrical characteristics of enhancement-mode n-channel Schottky tunneling barrier MOSFET with ALD-TiO2/Al2O3 as gate oxides on S-InP........................................85
5-3 Tentative conclusion........................................87
Chapter 6 Conclusion........................................104
References................................. 106
Publication List........................... 118

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