我們可以知道s-i-n+ 結構 GaAs的電調制反射光譜中存在許多FKOs，而且對光譜進行快速傅立葉轉換後，可分離出相對於輕電洞與重電洞躍遷的peak，然而，在每一個peak中仍包含相對於F+ F/2與F- F/2的兩個部分(其中F為內建電場， F為對sample提供交流電壓Vac後的調制場)。在本文中，我們將利用一較大的交流電壓來做為調制電場，使F+ F/2與F- F/2兩部分能夠再分離，且進一步地將屬於F- F/2中的重電洞躍遷部分擷取出來，並與Airy function理論式比較。

It is known that electroreflectance (ER) of surface-intrinsic-n+ type doped GaAs has exhibited many Franz-Keldysh oscillations to enable the application of fast Fourier transform to separate the heavy and light-hole transitions. However each peak still contains two components, which belong to F+ F/2 and F- F/2 respectively, where F is the built-in field and F is the modulating field of applied voltage (Vac). In this work, we have used a larger Vac to modulate the field, and hence the peaks can be further separated. The peak belonging to heavy hole-transition and F- F/2 can be singled out to compare with Airy function-theory.

第一章 簡介1
第二章 調制光譜原理
2.1 介電函數與反射率4
2.2 電子躍遷與吸收係數8
2.3 譜線圖形分析13
第三章 FKO theory
3.1 FKOs與漸近式18
3.2 傅立葉轉換的分析25
第四章 實驗設計
4.1 實驗樣品與能帶結構28
4.2 實驗架構與調制原理32
第五章 實驗結果與討論
5.1 較大調制場對光譜的影響36
5.2 實驗數據與理論值的比較43
第六章 結論51
參考文獻52

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