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博碩士論文 etd-0616108-221511 詳細資訊
Title page for etd-0616108-221511
論文名稱
Title
室溫氧化銦透明薄膜電晶體的製備
Fabrication and characterization of Transparent Indium oxide thin-film transistors at room temperature
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
56
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2008-06-11
繳交日期
Date of Submission
2008-06-16
關鍵字
Keywords
氧化銦、透明、薄膜電晶體
TFT, InO
統計
Statistics
本論文已被瀏覽 5689 次,被下載 14
The thesis/dissertation has been browsed 5689 times, has been downloaded 14 times.
中文摘要
本實驗的目的是在室溫的條件下製作氧化銦(Indium oxide) 透明薄膜電晶體,InO薄膜電晶體的通道層是以活性射頻磁式濺鍍的方法來成長,我們在通入氬氣和不同比例氧氣的條件下,進行InO電阻率、透光率、X-ray繞射及表面結構的分析。目前氧化銦在50 %通氧量的條件下電阻率約為 4.7×104 Ω-cm,平均透光率約為87 %。此外InO - TFT的電極材料及絕緣層則採用ITO及SiNX,ITO的電阻率約為7×10-4Ω-cm,平均透光率約為85 %,SiNX在1 MV/cm電場下的漏電流約為1×10-10 A/cm2。
本實驗所製作出來的InO薄膜電晶體,在通道長寬各為20μm的條件下,其最佳的電子遷移率為 3.8 cm2V-1s-1,VT為 1.72 V,電流開關比為2.3×106,subthreshold swing 為1.56 V/decade。
Abstract
Transparent InO (Indium oxide) thin-film transistors fabricated by reactive ratiofrequency (rf) magnetron sputtering at room temperature were demonstrated. The resistivity, transmittance, X-ray diffraction pattern, and surface morphology of the films prepared at different oxygen partial pressures were investigated. At a 50% oxygen partial pressure, the resistivity and the average transmittance of the films are 4.7×104 Ω-cm and 87 %, respectively. Indium tin oxide (ITO) and silicon nitride (SiNX) thin films are used as the electrode and gate insulator. The resistivity and the average transmittance of ITO electrodes are 7×10-4 Ω-cm and 85%. On the other hand, the maximum leakage current of less than 1×10-10A/cm2 was obtained for the SiNX layer at an electric field of 1 MV/cm.
For a 20μm channel length InO TFT , the measured saturation mobility, threshold voltage, on/off ratio and subthreshold swing are 3.8 cm2V-1s-1, 1.72 V, 2.3×106 and 1.56 V/decade, respectively.
目次 Table of Contents
第一章 導論
1-1 簡介 ----------------------------------------- 01
1-2 非晶矽薄膜電晶體 ----------------------------- 02
1-3 透明薄膜電晶體 --------------------------- 04
1-4 研究動機 ------------------------------------- 04
第二章 製程材料與儀器介紹
2-1 氧化銦錫(ITO)和氧化銦(In2O3) ------------- 07
2-2 氮化矽(Si3N4) ---------------------------------- 09
2-3 RF磁式濺鍍系統 ------------------------------- 10
2-4 量測儀器介紹 --------------------------------- 12
2-4-1 四點探針(Four-point-probe) ------------ 12
2-4-2 橢圓偏光儀(Ellipsometer) -------------- 13
2-4-3 X光繞射儀(XRD) ----------------------- 14
2-4-4 原子力顯微鏡(AFM) ---------------------- 16
2-4-5 場發射型掃描式電子顯微鏡(SEM) ---- 16
2-4-6 半導體參數分析儀(Semiconductor Parameter analyzer) ---------------- 17
第三章 實驗步驟
3-1 材料的成長條件
3-1-1 氧化銦錫(ITO) --------------------------- 18
3-1-2 氧化銦(In2O3) --------------------------- 20
3-1-3 氮化矽(Si3N4) ------------------------- 21
3-2 元件製作流程
3-2-1 光罩設計 ------------------------------- 22
3-2-2 元件製程 ------------------------------- 24
第四章 結果與討論
4-1 氧化銦材料分析
4-1-1 折射率 ---------------------------------- 29
4-1-2 電阻率(Resistivity) ------------------------ 30
4-1-3 透光率(Transmittance) --------------------- 31
4-1-4 X-ray繞射 ----------------------------- 32
4-1-5 表面結構與粗糙度 ----------------------- 34
4-2 氧化銦薄膜電晶體特性
4-2-1 量測結果 ------------------------------- 36
4-2-2 結果分析 ------------------------------- 38
第五章 結論 ---------------------------------------- 44
參考文獻.......................................45
參考文獻 References
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