本實驗第一部分，以高能量Nd-YAG脈衝雷射(波長1064nm-FR模式1000mJ /pulse) 於四乙基正矽酸鹽中剝溶蝕純鎳靶，產生佈植碳、矽、氫元素，因而具有由岩鹽結構序化為特殊超晶格的Ni1-xO次微米凝固顆粒與石墨烯奈米凝聚物，散佈於非晶質Si-C-O-H物質之中。這些特殊超晶格，包括沿著岩鹽母結構的 主軸<100>形成3x3x3的超晶結構與一維6×(010)混摻，以及另一岩鹽母結構2x2x2的尖晶石態超晶格(Ni2SiO4)。這些物質與Ni1-xO在脈衝雷射製程高溫高壓環境之Si-C-H共摻和壓縮內應力作用有關。
　　在第二部分，則以同樣脈衝雷射於氨水(0.25 M NH4OH)中剝溶蝕FCC結構之純鎳靶，產生佈植氮、氫元素具有岩鹽結構的NiO次微米球狀凝固顆粒，以及佈植氮、氫元素具有六方晶格結構的三氧化二鎳(Ni2O3)介穩奈米凝聚物。穿透式電子顯微鏡觀察發現其中岩鹽結構的球狀NiO顆粒有微小{100}表面，而且因氮原子在格隙位置造成較大的晶格參數; 而Ni2O3介穩奈米凝聚顆粒有非等軸外形，而且因奈米效應或因壓縮內應力造成較小的晶格參數。此外偏光與掃瞄電子顯微鏡觀察發現額外具有雙折射光性的帶狀物，是氫氧化鎳(Ni-雙層氫氧化物)聚簇的結果，而且在0.25M氨水環境中進行脈衝雷射剝熔蝕的氧化過程，並未形成硝酸鎳。上述物質具有特徵平面缺陷，以及X-光光電子能譜與紫外吸收光譜。

In the first part, pulsed laser ablation (PLA) of Ni in TEOS resulted in the formation of Si-C-H-codoped Ni1-xO particulates and nanocondensates with rocksalt-type derived superstructures, i.e. 2x2x2 (Ni2SiO4 spinel) and 3x3x3 mixed with 1-D 6x(010), graphene and amorphous Ni-O-Si-H phase. The superstructure phases can be attributed to Si-C-H codopant in Ni1-xO at high temperature and high pressure by the PLA process in TEOS.
In the second part, PLA of Ni in aqueous solution of ammonium hydroxide (0.25 M NH4OH) enabled the co-synthesis of N-H doped spherical NiO particulates with rocksalt-type structure and N-H doped nanocondensates Ni2O3 with hexagonal structure. 　Transmission electron microscopic observations indicated that the spherical N-H doped NiO particulates are slightly {100} and {110} facetted and have a larger lattice parameter due to N dopant in the intersititial site of the rocksalt-type structure; whereas the N-H doped Ni2O3 nanocondensates vulnerable to electron dosage are nonequiaxed and have a smaller lattice parameters due to smaller sized N dopant in substitution for oxygen atoms and/or internal compressive stress. Optical polarized microscopy further revealed the birefringent Ni-double layered hydroxide as elongate assembly. The 0.25 M NH4OH environment was oxidizing enough to exclude the formation of nickel nitrate during the PLA process. The overall particulates and nanocondensates have modified optoelectronic properties as indicated by X-ray photo spectroscopy and UV absorbance.

第一部分………..…………………………………………..……………….….1
壹、前言………..…………………………………………..……………….….1
貳、實驗流程……………………………………………….………….…...….4
四乙基正矽酸鹽中脈衝雷射剝熔蝕..……….…………………………...4
參、實驗步驟及方法…………………………………….………………...…..5
一.脈衝雷射剝熔蝕….……………………………….…..…………..…...5
二. X光繞射分析………………………………………….………….....…5
三.測量UV-Vis吸收光譜……………………………………………....…5
四.穿透式電子顯微鏡(TEM)…………………………………..…………5
　　五.掃描式電子顯微鏡(SEM)…………………………………..…………5
　　六.偏光顯微鏡(POM) …………………………………………………….6
肆、實驗結果………………………………………….………….…….….….7
一.X光繞射分析……………………………………………………..……7
二.UV-Vis吸收光譜分析………………………………….…………..….7
　　三.掃描式電子顯微鏡(SEM)觀察…………………………….……….……….7
四.穿透式電子顯微鏡(TEM)觀察…………………………….……….…7
伍、討論…………………………..…………..…………….……………..…...9
陸、結論………………………………………..………….………………...…12
柒、參考文獻………………………………….………………………….....…13

第二部分………………………………….……………………………....…….45
壹、前言………………………………….……………………………....…….45
貳、實驗流程………………………………….……………………...……..…48
氨水中脈衝雷射剝熔蝕………………………………….……...………...48
參、實驗步驟及方法………………………………….……………...………..49
一.脈衝雷射剝熔蝕….……………………………….…..…………..…....49
二.穿透式電子顯微鏡(TEM).…………………………………...………...49
三.掃描式電子顯微鏡(SEM)…….……………………………...………...49
四.偏光顯微鏡(POM) ………………………………….……..…………...49
五.X光光電子能譜分析(XPS) …………………………….…………..….49
六.測量UV-Vis吸收光譜……………………………….……..…………………..50
肆、實驗結果………………………………….…………………………….….51
　　一.UV-Vis吸收光譜分析………………….………………………….……51
　　二.掃描式電子顯微鏡(SEM)觀察………………………..………...……...51
三.X光光電子能譜(XPS)分析…………………………….……...………..51
四.穿透式電子顯微鏡(TEM)觀察…………………………………………52
伍、討論………………………………….………………………..……………55
陸、結論……………………………………….………………..………………59
柒、參考文獻………………………………….……………..…………………60

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