市面上販售的氣體感測器，主要分為化學式與光學式兩種，前者售價便宜但有著靈敏度不佳以及使用壽命短的缺點，後者因為微機電技術的成熟而逐漸為主流，本論文以光學式為主，著重於探討紅外線氣體感測器中感測器的部分，長遠目標除了達到多種氣體偵測的功能外，還能藉由調整熱導值而具有諧調響應度的功能。
在本論文中，利用薄膜沉積、曝光、乾濕蝕刻等製程完成面型微加工的架構，熱型紅外線感測器主要是藉由材料間不同的特性，當吸收層吸收紅外光後，引起電阻電壓等變化，再搭配感測電路讀取數據變化。在光學吸收部分，利用金屬反射層結合雙層氮化矽吸收層增加紅外光吸收，在熱絕緣部分，除了以濕式蝕刻去除犧牲層二氧化矽使元件懸浮外，額外沉積一熱絕緣層二氧化鋯，兩者皆可以減少固態的熱傳導使得元件的靈敏度更加精確。二氧化鋯的熱導值約為1.8 W/mK，具有相當良好的隔熱效果，而為了證實其隔熱效果則利用熱像儀拍攝熱影像圖。我們選用非晶矽做為主動層的原因是因為它具有高的電阻溫度係數且符合標準的電子電路製程。整體來說，我們完成了一個具有良好熱絕緣結構的感測元件。

The gas sensors are generally divided into chemical and optical type in the market, the former has low price but it has poor sensitivity and short life of the shortcomings, in recent years, since the MEMS technology is full developed, the latter has become mainstream. Therefore, in this thesis, we investigate about optical gas sensor further. The direction of research for this thesis is focus on infrared gas sensor. The gas sensor can achieve multi-gas detection and responsivity can be tuned by adjusting thermal conductance are the final aim of this sensor.
In the thesis, surface micromachining structure are accomplished by film deposition、exposure、dry and wet etching. A bolometer employs a characteristic of thermal sensitive layer as it changes its sheet resistance according to the change of the temperature. It can convert incident IR radiation into an electrical signal by sense circuit. In terms of optical absorbing, we combine Au reflecting layer with double silicon nitride absorbing layer. Looking forward to increase infrared absorption. In terms of thermal isolation, using wet etching silicon dioxide to achieve suspension structure, in addition, ZrO2 is deposited as a thermal isolation layer. Both are effective decrease solid state heat conduction, so that, Responsivity will be more accurate. The thermal conductance of ZrO2 is 1.8 W/mK and it has excellent heat insulation. In order to confirm the insulation effect, thermal imager is be used. In terms of thermos-sensing layer, α-Si has a high value of the temperature coefficient of resistance and compatibility, so it is chosen to act active layer. In conclusion, we achieve a sensor with great thermal isolation capacity.

論文審定書 i
公開授權書 ii
致謝 iii
摘要 iv
Abstract v
目錄 vi
圖目錄 x
表目錄 xii
第一章、緒論 1
1.1前言 1
1.1.1 紅外線簡介 1
1.2 紅外線感測器簡介 2
1.3 氣體感測器 5
1.3.1 化學式氣體感測器 6
1.3.2 紅外光氣體感測器 7
第二章、架構與儀器原理 13
2.1 微機電(Micro Elector Mechanical System, MEMS)簡介 13
2.1.1 面型微加工(Surface micromachining) 13
2.1.2 體型微加工(Bulk micromachining) 14
2.2 熱輻射簡介 15
2.2.1 微熱輻射熱阻性感測器(Micro-bolimeter)原理 15
2.2 2 紅外光吸收層 16
2.2.3 電阻溫度係數反應層 16
2.2.4 熱絕緣結構之設計 17
2.2.5 感測器性能參數 18
2.2.6 雜訊分析 19
2.3 靜電力驅動器結合微機電技術 20
2.4 感測器整體架構 23
2.5 製程儀器原理 24
2.5.1 電漿增強式化學氣相沉積系統 (Plasma-enhanced chemical vapor deposition, PECVD) 24
2.5.2 光阻塗佈機 (Spin coating) 24
2.5.3 曝光 (Exposure) 25
2.5.4 雙電子槍蒸鍍系統 (Dual E-Beam Evaporator) 26
2.5.5 感應耦合型電漿蝕刻 (Inductive Coupled Plasma, ICP) 27
2.5.6 多靶磁控濺鍍系統 (Multi-Target Sputter) 28
2.6 量測儀器原理 30
2.6.1 四點探針 30
2.6.2 場發射型掃描式電子顯微鏡 (SEM) 31
2.6.3 白光干涉儀 32
第三章、實驗流程 33
3.1 元件製程步驟 33
3.1.1 清洗基板 (Substrate Cleaning) 33
3.1.2 氮化矽的沉積 33
3.1.3 金反射層的沉積 36
3.1.4 犧牲層二氧化矽的沉積 37
3.1.5 沉積氮化矽當支架 39
3.1.6 沉積二氧化鋯作為熱絕緣層 41
3.1.7 底吸收層氮化矽的沉積 42
3.1.8 沉積非晶矽作為電阻溫度係數層 43
3.1.9 表面吸收層氮化矽的沉積 45
3.1.10 電子束蒸鍍上下電極 47
3.1.11 去除犧牲層二氧化矽 48
第四章、實驗結果與討論 49
4.1 元件懸空SEM及熱影像圖 49
第五章、結論 53
參考文獻 54

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