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博碩士論文 etd-0617105-034852 詳細資訊
Title page for etd-0617105-034852
論文名稱
Title
鑽石滲硼電極製作與分析
Study on The Nano-Structured Diamond Electrodes Grown by Microwave CVD
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
55
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2005-05-26
繳交日期
Date of Submission
2005-06-17
關鍵字
Keywords
鑽石電極、奈米結構、微波電漿化學氣相沉積、循環伏安法
microwave plasma CVD, diamond electrode, nano structure, cyclic voltammetry
統計
Statistics
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中文摘要
本論文研究目的為製造具有奈米結構的滲硼鑽石電極與其電化學特性的分析。超薄鑽石薄膜是以微波電漿化學沉積法在多孔矽基板表面上所合成。由於多孔矽表面具有奈米大小的結構特性,為了讓鑽石能夠覆蓋在多孔矽表面,產生表面具有奈米結構的鑽石電極,並藉由其高面粗糙度的特性,提高電極的靈敏度,在鑽石薄膜成長時施予較大的負偏壓並將沉積時間縮短至數分鐘而得到奈米結構之超薄鑽石薄膜。

實驗結果以電子顯微鏡(SEM)觀察鑽石表面結構,及拉曼光譜(Raman spectra)分析其特性,以四點探針(4 point probes system)量測薄膜之片電阻大小,再製作成電極分析其電化學特性。由SEM結果可以觀察出,鑽石薄膜表面呈現奈米結構。比較不滲硼與滲硼的鑽石薄膜表面結構,發現滲硼鑽石表面結構較製密,但其形狀不如無滲硼的鑽石表面來得尖銳。鑽石薄膜的電化學特性則是以循環伏安法分析,利用鑽石薄膜電極對氰銨化鐵(K4[Fe(CN)6])及次磷酸鹽(K2HPO4)緩衝溶液中進行氧化還原,以分析鑽石電極的氧化還原能力。經由實驗結果證實,在多孔矽所成長滲硼鑽石得到較高的氧化還原電流,其可能原因是鑽石薄膜表面的高粗糙提供較大的反應面積與在表面呈現較多具導電性之SP2鍵結所造成。
Abstract
The microstructure and electrochemical behavior of boron doped and undoped ultra thin diamond film electrodes have been studied in this work. The ultra thin diamond films are deposited on porous silicon (PSi) by microwave plasma chemical vapor deposition (MPCVD). In order to enlarge the surface area of diamond electrodes, the deposition of nano structured diamond thin films is performed only in a short time deposition under a negative bias, so that diamond nuclei grew from the tips of PSi nano structures and the thin film surface remained rough and nano fine structured. Diamond thin films were analyzed by Raman spectroscopy and SEM, and then fabricated to the electrode device. From SEM analysis, the morphology of diamond thin films on PSi reveals in the shape of nano rods diamond crystallites. The electro-chemical response was evaluated by performing cyclic voltammetry in the inorganic K4[Fe(CN)6] and a K2HPO4 buffer solution. Boron doped diamond thin film on porous silicon has demonstrated a high redoxidation current of cyclic voltammetry, which may be due to the rough surface providing more electrochemical surface area and more sp2 conducting bonds exposed on the surface.
目次 Table of Contents
Acknowledgements I
中文摘要 II
Abstraction III
Content IV
Table Content VI
Figure Content VI
1. Introduction 1
1.1 Review 1
2. Experimental Details 3
2.1 Diamond Thin Film Preparation 3
2.2 Characterization of Diamond Thin Films 4
2.3 Diamond Electrode Fabrication 4
2.4 Details of Cyclic Voltammetry Analysis 4
3. Results and Discussions 6
3.1 Surface Morphology of Diamond for A Long Time Deposition 6
3.2 Surface Morphology of Diamond for A Short Time Deposition 7
3.3 Fabrications of BDD on PSi 8
3.4 Cyclic Voltammetry Measurements 10
3.5 Electrochemical property of BDD 12
5. Reference 16
Appendix A 42
Appendix B 43
Appendix C 44
參考文獻 References
1. J. Xu, M.C. Granger, Q. Chen, J.W. Strojek, T.E. Lister, and G.M. Swain, Anal. Chem. 69 (1997) 591A
2. H.B. Martin, A. Argoitia, U. Landau, A.B. Anderson, and J.C. Angus, J. Electrochem. Soc.143 (1996) L133-L136
3. R. Samlenski, C. Haug, R. Brenn, C.Wild, R.Locher, R.Koil, Diamond Relat. Mater. 5 (1996) 947
4. K. Honda, T.N. Rao, D.A. Tryk, A. Fujishima, M, Watanabe, K,Yasui, and H. Masuda, J. Electrochem. Soc. 147 (2) (2000) 659-664
5. L.C. Hian, K.J. Grehan, R.G. Compton, J.S. Foord, and F. Marken, Diamond Relat. Mater. 12 (2003) 590-595
6. V. Raiko, R. Spitzl, J. Engemann, V. Borisenko, and V. Bondarenko, Diamond Relat. Mater. 5 (1996) 1063-1069
7. 中山大學碩士論文 陳偉斯 滲硼之化學氣相沉積鑽石的拉曼光譜分析 2003
8. A.J. Brad, L.R. Faulkner, “Electrochemical Methods: Fundamentals and Applications, 2nd ed.”, John Wiley & Sons, Inc, (2001)
9. 中山大學碩士論文 劉宗憲 化學氣相沈積之滲氮鑽石薄膜研究 2003
10. J.A. Bennett, J. Wang, Y. Show, and G. M. Swain, J. Electrochem. Soc. 151 (9) (2004) E306-313
11. J.W. Ager Ⅲ, W. Walukiemicz, M. McCluskey, M.A. Plano, M.I.Landstrass, Appl. Phys. Lett. 66 (1995) 616
12. Y. Wang, H. Li, Y. Xiong, S. Zhang,Z. Lin, Diamond Relat.Mater., 9, (2000) 1708-1711
13. M.C. Granger and G.M. Swain, J. Electrochem. Soc. 146 (12) (1999) 4551-4558
14. J.V. Champion and S.J. Dodd, J. Phy. D: Appl. Phys. 28 (1995) 398-407
15. B.V. Sarada, T.N. Rao, D.A. Tryk, and A. Fujishima, J. Electrochem. Soc. 146 (4) (1999) 1469-1471
16. V. Baranauskas, D.C. Chang, B.B. Li and A.C. Peterlevitz, Jounal of Porous Mater. 7, (2000) 401-404
17. V. Baranauskas, B.B. Li, A.C. Peterlevitz, M.C. Tosin, and S.F. Durrant, Thin Solid films 355-356 (1999) 233-238
18. I. Duo, A. Fujishima, and Ch. Comninellis, Electrochem. Commun. 5 (2003) 695-700
19. T.F. Young, C. C. Ting, Y. C. Lin, T. R. Tseng, and C. M. Wu, 13th Semiconducting and Insulating Materials Conference, Beijing, 2004, September 20-25. SIMC-XIII-2004 IEEE EDS Conference Proceedings, approved.
20. Y. Namba and E. Heidarpour, J. Appl. Phys 75 (1992) 1748-1751
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