利用結晶矽薄膜於玻璃基板上製作矽太陽電池可以大幅降低光發電產業之成本。由於這個原因，近十年有許多可行性的方法被提出來製造矽晶薄膜以用來取代
傳統的線切割技術。其中一個方法為"SLiM-Cut"， 是利用沉積於矽基板上方的薄膜之熱應力使其從矽基板剝起薄層。到現在為止，有三種材料被用於當作沉積於矽基板上方的沉積層已經實驗成功。 鎳， 鎳/鉻 ，銀/鋁 結構。在此研究中，我們提供一個利用塗抹小面積區域的銀膠於太陽電池基板上方邊緣處使其產生剝離而得到太陽電池薄膜。這個新方法可以減少成本並且降低實驗操作溫度

Silicon solar cell made from thin-film crystalline-silicon layers on glass substrates could lower the price of photovoltaic electricity substantially. For this reason, a considerable number of methods have been proposed in the last decade to manufacture thin silicon foils which aim to replace the commonly used sawing technique. One of these methods ”SLiM-Cut” is based on peeling off a thin layer from a silicon substrate by means of the thermal stress induced by layers deposited on the silicon. Up to now, three different materials which are used to be deposited layers have been successfully employed in this technique: Nickel, Nickel/Chromium alloy and a Silver/Aluminium system. In this work we invent the possibility to induce the lift-off of a thin silicon solar cell foil by means of smearing small region Ag paste on top of the solar cell. This new method has low cost and lowers the operating temperatures.

論文審定書….. i
ACKNOWLEDGEMENT ...ii
摘要………………………..…………………………………………………………iii
ABSTRACT.... ...…..…………………………………………………………………iv
CONTENTS …………….…………………………………..………………...……...v
LIST OF FIGURES....................................................................................................vi

1.Introduction 1
1-1 Background of semiconductor materials 1
1-2 Application of Semiconductor materials 2
1-3 Background of making thin silicon film 3
1-4 Motivation of new tearing semiconductor method 6
1-5 1-5 Selection of deposited layers 6
2.Experiments 11
2-1 Type of Film stress 11
2-1-1 Epitaxial stresses 11
2-1-2 Thermal stress 11
2-1-3 Intrinsic or growth stresses 12
2-2 Tearing mechanism 12
2-2-1 SiO2 bonding 12
2-2-2 Cracking patterns 12
2-3 Sputtering system 13
2-4 Physical vapor deposition system…………………………………………..13
2-5 Tearing Procedures…………………………………………………………14
2-5-1 SiO2 layer deposited………………………………………………..14
2-5-2 Smearing Ag paste procedures……………………………………...14
2-5-3 Heating and cooling down procedure………………………..…..….14
2-5-4 Tearing off and removing Ag paste procedure…………………..….15
2-5-5 Direct Bonding on glass procedure………………………….….…..15
2-6 Ohmic contact……………………………………………………….….…..16

3.Result and Discussion 22
3-1 Dependence of characterization of tearing film on experiment parameters 22
3-1-1 Heating temperature 22
3-1-2 Cooling rate…………………………………………………………22
3-1-3 Thickness of Ag paste……………………………………………….23
3-1-4 The materials wafer of tearing off…………………………………..23
3-2 Quality and characterization of tore film 24
3-2-1 Photoluminescence of tore GaAs wafer…………………………….24
3-2-2 Measurements of tore solar cell films……………………………….24

4. Conclusions ...............................................................................34

References ....................................................................................35

Chapter 1
[1] Frederic Dross, Aurelien Milhe, Jo Robbelein, Ivan Gordon, Pierre-Olivier Bouchard, Guy Beaucarne, Jef Poortmans. “STRESS-INDUCED LIFT-OFF METHOD FOR KERF-LOSS-FREE WAFERING OF ULTRA-THIN (-50 101m) CRYSTALLINE SI WAFERS” IMEC, V.Z.w- Belgium, 2 Ecole des Mines de Paris (CEMEF) –France.
[2] I. Gordon n, F.Dross,V.Depauw, A.Masolin,Y.Qiu,J.Vaes,D.VanGestel,J.Poortmans imec, Kapeldreef75,B-3001Leuven,Belgium “Three novel ways of making thin-film crystalline-silicon layers on glass for solar cell applications“
[3] I.Mizushima,T.Sato,S.Taniguchi,Y.Tsunashima, Empty-space-in-silicon technique for fabricating silicon-on-nothing structure, Applied Physics, Letters 77(2000)3290.
[4] Silicon PV: April 03-05, 2012, Leuven, Belgium “Epoxy-induced spalling of Silicon”
[5] A. Masolin, J. Vaes, F. Dross, R. Martini, A. P. Rodriguez, J. Poortmans and R. Mertens, Evidence and Characterization of Crystallographic Defect and Material Quality after SLIM-Cut Process, Proceedings of the Material Research Society, San Francisco, California, USA, 2011.

Chapter 2
[1] Mechanical and Enuironmental Engineering Department, University of California. “Cracking and Debonding of microlaminates”
[2] R. Behrisch (ed.) (1981). Sputtering by Particle bombardment. Springer, Berlin. ISBN 978-3-540-10521-3.
[3] Materials Science and Engineering, R25 (1999) 1-88. “Wafer direct bonding: tailoring adhesion between brittle materials”

Chapter 3

[1] J. Appl. Phys. 49, 2423 (1978) “Thermal stresses and cracking resistance of dielectric films (SiN, Si3N4, and SiO2) on Si substrates” A. K. Sinha, H. J. Levinstein, and T. E. Smith.